Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

ABSTRACT

Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims priority under 35U.S.C., §120 to U.S. patent application Ser. No. 10/864,186, filed Jun.9, 2004 and entitled Non-Volatile Electromechanical Field Effect Devicesand Circuits Using Same and Methods of Forming Same, the entire contentsof which are incorporated herein by reference, which claims priorityunder 35 U.S.C. §119(e) to U.S. Provisional Patent Application No.60/476,976, filed on Jun. 9, 2003, entitled Non-VolatileElectromechanical Field Effect Transistors and Methods of Forming Same,which is incorporated herein by reference in its entirety, and which isrelated to the following U.S. applications, the contents of which areincorporated herein in their entirety by reference:

-   -   U.S. patent application Ser. No. 10/810,962, now U.S. Pat. No.        6,944,054, filed Mar. 26, 2004 and entitled NRAM Bit Selectable        Two-Device Nanotube Array;    -   U.S. patent application Ser. No. 10/810,963, filed Mar. 26,        2004, entitled NRAM Byte/Block Released Bit Selectable        One-Device Nanotube Array;    -   U.S. patent application Ser. No. 10/811,191, filed Mar. 26,        2004, entitled Single Transistor With Integrated Nanotube        (NT-FET); and    -   U.S. patent application Ser. No. 10/811,373, filed Mar. 26,        2004, entitled Nanotube-On-Gate FET Structures And Applications.

BACKGROUND

1. Technical Field

The present invention relates to field effect devices havingnon-volatile behavior as a result of control structures having nanotubecomponents and to methods of forming such devices.

2. Discussion of Related Art

Semiconductor MOSFET transistors are ubiquitous in modern electronics.These field effect devices possess the simultaneous qualities ofbistability, high switching speed, low power dissipation,high-reliability, and scalability to very small dimensions. One featurenot typical of such MOSFET-based circuits is the ability to retain adigital state (i.e. memory) in the absence of applied power; that is,the digital state is volatile.

FIG. 1 depicts a prior art field effect transistor 10. The transistor 10includes a gate node 12, a drain node 14, and a source node 18.Typically, the gate node 12 is used to control the device. Specifically,by applying an adequate voltage to the gate node 12 an electric field iscaused that creates a conductive path between the drain 14 and source18. In this sense, the transistor is referred to as switching on.

Currently, most memory storage devices utilize a wide variety of energydissipating devices which employ the confinement of electric or magneticfields within capacitors or inductors respectively. Examples of state ofthe art circuitry used in memory storage include FPGA, CPLD, ASIC, CMOS,ROM, PROM, EPROM, EEPROM, DRAM, MRAM and FRAM, as well asdissipationless trapped magnetic flux in a superconductor and actualmechanical switches, such as relays.

An FPGA (Field Programmable Gate Array) or a CPLD (Complex ProgrammableLogic Device) is a programmable logic device (PLD), a programmable logicarray (PLA), or a programmable array logic (PAL) with a high density ofgates, containing up to hundreds of thousands of gates with a widevariety of possible architectures. The ability to modulate (i.e.effectively to open and close) electrical circuit connections on an IC(i.e. to program and reprogram) is at the heart of the FPGA (Fieldprogrammable gate array) concept.

An ASIC (Application Specific Integrated Circuit) chip is customdesigned (or semi-custom designed) for a specific application ratherthan a general-purpose chip such as a microprocessor. The use of ASICscan improve performance over general-purpose CPUs, because ASICs are“hardwired” to do a specific job and are not required to fetch andinterpret stored instructions.

Important characteristics for a memory cell in electronic device are lowcost, nonvolatility, high density, low power, and high speed.Conventional memory solutions include Read Only Memory (ROM),Programmable Read only Memory (PROM), Electrically Programmable Memory(EPROM), Electrically Erasable Programmable Read Only Memory (EEPROM),Dynamic Random Access Memory (DRAM) and Static Random Access Memory(SRAM).

ROM is relatively low cost but cannot be rewritten. PROM can beelectrically programmed but with only a single write cycle. EPROM(Electrically-erasable programmable read-only memories) has read cyclesthat are fast relative to ROM and PROM read cycles, but has relativelylong erase times and reliability only over a few iterative read/writecycles. EEPROM (or “Flash”) is inexpensive, and has low powerconsumption but has long write cycles (ms) and low relative speed incomparison to DRAM or SRAM. Flash also has a finite number of read/writecycles leading to low long-term reliability. ROM, PROM, EPROM and EEPROMare all non-volatile, meaning that if power to the memory is interruptedthe memory will retain the information stored in the memory cells.

DRAM (dynamic random access memory) stores charge on capacitors but mustbe electrically refreshed every few milliseconds complicating systemdesign by requiring separate circuitry to “refresh” the memory contentsbefore the capacitors discharge. SRAM does not need to be refreshed andis fast relative to DRAM, but has lower density and is more expensiverelative to DRAM. Both SRAM and DRAM are volatile, meaning that if powerto the memory is interrupted the memory will lose the information storedin the memory cells.

Consequently, existing technologies are either non-volatile but are notrandomly accessible and have low density, high cost, and limited abilityto allow multiple writes with high reliability of the circuit'sfunction, or they are volatile and complicate system design or have lowdensity. Some emerging technologies have attempted to address theseshortcomings.

For example, magnetic RAM (MRAM) or ferromagnetic RAM (FRAM) utilizesthe orientation of magnetization or a ferromagnetic region to generate anonvolatile memory cell. MRAM utilizes a magnetoresistive memory elementinvolving the anisotropic magnetoresistance or giant magnetoresistanceof ferromagnetic materials yielding nonvolatility. Both of these typesof memory cells have relatively high resistance and low-density. Adifferent memory cell based upon magnetic tunnel junctions has also beenexamined but has not led to large-scale commercialized MRAM devices.FRAM uses circuit architecture similar to DRAM but which uses a thinfilm ferroelectric capacitor. This capacitor is purported to retain itselectrical polarization after an externally applied electric field isremoved yielding a nonvolatile memory. FRAM suffers from a large memorycell size, and it is difficult to manufacture as a large-scaleintegrated component. See U.S. Pat. Nos. 4,853,893; 4,888,630;5,198,994, 6,048,740; and 6,044,008.

Another technology having non-volatile memory is phase change memory.This technology stores information via a structural phase change inthin-film alloys incorporating elements such as selenium or tellurium.These alloys are purported to remain stable in both crystalline andamorphous states allowing the formation of a bi-stable switch. While thenonvolatility condition is met, this technology appears to suffer fromslow operations, difficulty of manufacture and poor reliability and hasnot reached a state of commercialization. See U.S. Pat. Nos. 3,448,302;4,845,533; and 4,876,667.

Wire crossbar memory (MWCM) has also been proposed. See U.S. Pat. Nos.6,128,214; 6,159,620; and 6,198,655. These memory proposals envisionmolecules as bi-stable switches. Two wires (either a metal orsemiconducting type) have a layer of molecules or molecule compoundssandwiched in between. Chemical assembly and electrochemical oxidationor reduction are used to generate an “ON” or “OFF” state. This form ofmemory requires highly specialized wire junctions and may not retainnon-volatilely owing to the inherent instability found in redoxprocesses.

Recently, memory devices have been proposed which use nanoscopic wires,such as single-walled carbon nanotubes, to form crossbar junctions toserve as memory cells. See WO 01/03208, Nanoscopic Wire-Based Devices,Arrays, and Methods of Their Manufacture; and Thomas Rueckes et al.,“Carbon Nanotube-Based Nonvolatile Random Access Memory for MolecularComputing,” Science, vol. 289, pp. 94-97, 7 Jul., 2000. Electricalsignals are written to one or both wires to cause them to physicallyattract or repel relative to one another. Each physical state (i.e.,attracted or repelled wires) corresponds to an electrical state.Repelled wires are an open circuit junction. Attracted wires are aclosed state forming a rectified junction. When electrical power isremoved from the junction, the wires retain their physical (and thuselectrical) state thereby forming a non-volatile memory cell.

The use of an electromechanical bi-stable device for digital informationstorage has also been suggested (c.f. U.S. Pat. No. 4,979,149:Non-volatile memory device including a micro-mechanical storageelement).

The creation and operation of a bi-stable nano-electro-mechanicalswitches based on carbon nanotubes (including mono-layers constructedthereof) and metal electrodes has been detailed in a previous patentapplication of Nantero, Inc. (U.S. Pat. Nos. 6,574,130, 6,643,165,6,706,402; U.S. patent application Ser. Nos. 09/915,093, 10/033,323,10/033,032, 10/128,117, 10/341,005, 10/341,055, 10/341,054, 10/341,130,10/776,059, and 10/776,572, the contents of which are herebyincorporated by reference in their entireties).

SUMMARY

The present invention provides non-volatile field effect devices andcircuits using same.

Under one aspect of the present invention a non-volatile field effectdevice includes a source, drain and gate with a field-modulatablechannel between the source and drain. Each of the source, drain, andgate have a corresponding terminal. An electromechanically-deflectable,nanotube switching element is electrically positioned between one of thesource, drain and gate and its corresponding terminal. The others of thesource, drain and gate are directly connected to their correspondingterminals. The nanotube switching element iselectromechanically-deflectable in response to electrical stimulation attwo control terminals to create one of a non-volatile open andnon-volatile closed electrical communication state between the one ofthe source, drain and gate and its corresponding terminal.

Under another aspect of the present invention, the nanotube switchingelement includes an article formed of nanotube fabric.

Under another aspect of the present invention, the nanotube fabric is aporous nanotube fabric.

Under another aspect of the present invention, one of the two controlterminals has a dielectric surface for contact with the nanotubeswitching element when creating a non-volatile open state.

Under another aspect of the present invention, the source, drain andgate may be stimulated at any voltage level from ground to supplyvoltage, and wherein the two control terminals are stimulated at anyvoltage level from ground to a switching threshold voltage larger inmagnitude than the supply voltage.

Under another aspect of the present invention, the nanotubes aresingle-walled carbon nanotubes.

Under another aspect of the present invention, the fabric issubstantially a monolayer of nanotubes.

Under another aspect of the present invention, the nanotube switchingelement includes an article made from nanofabric that is positionedbetween the two control terminals.

Under another aspect of the present invention, one of the two controlterminals is a release electrode for electrostatically pulling thenanotube article out of contact with the one of the source, drain andgate so as to form a non-volatile open state.

Under another aspect of the present invention, the other of the twocontrol terminals is a set electrode for electrostatically pulling thenanotube article into contact with the one of the source, drain and gateso as to form a non-volatile closed state.

Under another aspect of the present invention, the one of the source,drain and gate set electrode for electrostatically pulling the nanotubearticle into contact with the terminal corresponding to the one of thesource, drain and gate so as to form a non-volatile closed state.

Under another aspect of the present invention, one of the two controlterminals is operably in communication with the nanotube switchingelement to turn the device into an on mode and an off mode, such that inthe on mode the device the source, drain, and gate may be used to modulethe channel and in the off mode the channel is non-conductiveirrespective of source, drain, and gate stimulus.

Under another aspect of the present invention, the device is a memorycell with information state non-volatilely stored by the position of thenanotube switching element.

Under another aspect of the present invention, the device is in the onmode the source signal is a digital inversion of the gate signal.

Under another aspect of the present invention, the device is in the onmode the source signal is an analog inversion of the gate signal.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawing,

FIG. 1 is a schematic of a prior art field effect transistor;

FIG. 2A-L illustrate schematics of three models of preferred embodimentsof the invention;

FIGS. 3A-C illustrate the operation of field effect devices withcontrollable sources for two of the FED configurations;

FIGS. 4-6 illustrate waveforms for exemplary operation of devicesaccording to certain aspects of the invention;

FIGS. 7A-C illustrate the operation of field effect devices according tocertain aspects of the invention;

FIGS. 8 and 9 illustrate waveforms for exemplary operation of devicesaccording to certain aspects of the invention;

FIGS. 10A-12 illustrate the operational waveforms for field effectdevices according to certain aspects of the invention;

FIGS. 13A-C illustrate schematic representations of preferredembodiments of the invention;

FIG. 14 illustrates a cross section of one embodiment of the invention;

FIG. 15 illustrates operational waveforms for field effect devicesaccording to certain aspects of the invention;

FIG. 16 illustrates electrical (I/V) characteristics of devicesaccording to one aspect of the invention;

FIGS. 17A-D illustrate a schematic representation of devices accordingto one aspect of the invention along with depictions of memory states ofsuch a device;

FIG. 18 illustrates schematics of an NRAM system according to preferredembodiments of the invention;

FIG. 19 illustrates operational waveforms for memory devices accordingto certain aspects of the invention;

FIG. 20A illustrates a memory array flow chart according to one aspectof the invention;

FIG. 20B illustrates a schematic of a switch amplifier/latch accordingto certain aspects of the invention;

FIG. 21 illustrates waveforms for a memory system according to certainaspects of the invention;

FIG. 22 is a flow chart of a method of manufacturing preferredembodiments of the invention;

FIGS. 23, 23′ and 23″ are flow charts illustrating acts performed inpreferred methods of the invention;

FIGS. 24A-F illustrate exemplary structures according to aspects of theinvention;

FIGS. 25A-GG illustrate exemplary intermediate structures according tocertain aspects of the invention;

FIG. 26 is a flow chart of a method of manufacturing preferredembodiments of the invention;

FIGS. 27, 27′, 28 and 28′ are flow charts of method of manufacturingpreferred embodiments of the invention;

FIGS. 29A-F illustrate intermediate structures according to certainaspects of the invention;

FIGS. 30A-P (exclusive of O) illustrate intermediate structuresaccording to certain aspects of the invention;

FIGS. 31A-D illustrate intermediate structures according to certainaspects of the invention;

FIGS. 32A-B illustrate cross sections of an embodiment of the invention;

FIG. 32C illustrates a plan view of an embodiment of the invention;

FIGS. 33A-C illustrate cross sections of an embodiment of the invention;

FIG. 33D illustrates a plan view of an embodiment of the invention;

FIGS. 34A-D illustrate schematics of circuitry according to certainaspects of the invention;

FIG. 35 illustrates schematics of memory arrays according to certainaspects of the invention;

FIG. 36 illustrates operational waveforms of a memory array according toone aspect of the invention;

FIG. 37A illustrates a diagram outlining a memory array system accordingto one aspect of the invention;

FIG. 37B is a schematic of a cell according to once aspect of theinvention;

FIG. 38 illustrates operational waveforms of a memory array according toone aspect of the invention;

FIG. 39A-D illustrate schematics of circuitry according to certainaspects of the invention;

FIG. 40 illustrates a schematic of an NRAM system, according to oneembodiment of the invention;

FIG. 41 illustrates the operational waveforms of a memory arrayaccording to one aspect of the invention;

FIG. 42A illustrates a diagram outlining a memory array system accordingto one aspect of the invention;

FIG. 42B is a schematic of a cell according to once aspect of theinvention;

FIG. 43 illustrates the operational waveforms of a memory arrayaccording to one aspect of the invention;

FIGS. 44A-B illustrate cross sections of memory arrays according toaspects of the invention;

FIG. 44C illustrates a plan view of a memory array structure accordingto one aspect of the invention;

FIGS. 45A-B illustrate cross sections of memory arrays according toaspects of the invention;

FIG. 45C illustrates a plan view of a memory array structure accordingto one aspect of the invention;

FIGS. 46A-C illustrate cross sections of structures according to certainaspects of the invention;

FIG. 46D illustrates a plan view of a memory array structure accordingto one aspect of the invention;

FIGS. 47A-C illustrate schematics of circuitry for a non-volatile fieldeffect device according to aspects of the invention;

FIG. 48 illustrates a schematic of an NRAM system according to oneaspect of the invention;

FIG. 49 illustrates operational waveforms of a memory array according toone aspect of the invention;

FIG. 50A illustrates a diagram outlining a memory array system accordingto one aspect of the invention;

FIG. 50B is a schematic of a cell according to once aspect of theinvention;

FIG. 51 illustrates operational waveforms of a memory array according toone aspect of the invention;

FIGS. 52A-G illustrate cross sections of exemplary structures accordingto aspects of the invention;

FIG. 52H illustrates a plan view of an exemplary structure according toone aspect of the invention;

FIGS. 53A-C illustrate schematics of circuitry for two controlled sourcenon-volatile field effect devices according to certain aspects of theinvention;

FIG. 54 illustrates a schematic of an NRAM system according to oneaspect of the invention;

FIG. 55 illustrates the operational waveforms of a memory arrayaccording to one aspect of the invention;

FIG. 56A illustrates a diagram outlining a memory array system accordingto one aspect of the invention;

FIG. 56B is a schematic of a cell according to once aspect of theinvention;

FIG. 57 illustrates the operational waveforms of a memory arrayaccording to one aspect of the invention;

FIGS. 58A-C illustrate cross sections of exemplary structures accordingto aspects of the invention;

FIG. 58D illustrates a plan view of an exemplary structure according toone aspect of the invention.

DETAILED DESCRIPTION

Preferred embodiments of the invention provide a field effect devicethat acts like a FET in its ability to create an electroniccommunication channel between a drain and a source node, under thecontrol of a gate node. However, the preferred field effect devicesfurther include a separate control structure to non-volatilely controlthe electrical capabilities of the field effect device. Morespecifically, the control structure uses carbon nanotubes to providenon-volatile switching capability that independently control theoperation of the drain, source, or gate node of the field effect device.By doing so, the control structure provides non-volatile state behaviorto the field effect device. Certain embodiments provide non-volatile RAMstructures. Preferred embodiments are scalable to large memory arraystructures. Preferred embodiments use processes that are compatible withCMOS circuit manufacture. While the illustrations combine NMOS FETs withcarbon nanotubes, it should be noted that based on the principle ofduality in semiconductor devices, PMOS FETs may replace NMOS FETs, alongwith corresponding changes in the polarity of applied voltages

Overview

FIGS. 2A-L illustrate schematics of three models of preferredembodiments of the invention. As will be explained further, below, apreferred field effect device includes a control structure usingnanotubes to provide non-volatile behavior as a result of the controlstructure.

Field Effect Devices (FEDs) with Controllable Sources

Field effect devices (FEDs) with controllable sources may also bereferred to as nanotube (NT)-on-Source. FIG. 2A illustrates a schematicfor field effect device (FED1) 20. The FED1 device 20 has a terminal T1connected to gate 22, a terminal T2 connected to drain 24, and acontrollable source 26. Like a typical field effect device (e.g.,transistor 10 of FIG. 1) the gate node may be used to create a field toinduce a conductive channel in channel region 27 between the drain 24and a (controllable) source 26. In this case, the source 26 iscontrollable so that it may be in open or closed communication asillustrated with the switch 30. Switch 30, like all nanofabric articlesreferred to below, is fabricated using one or more carbon nanotubes(CNTs, or NTs) as described in incorporated references. Switch 30 ispreferably physically and electrically connected to controllable source26 by contact 28. Switch 30 may be displaced to contact switch-plate(switch-node) 32, which is connected to a terminal T3. Switch 30 may bedisplaced to contact release-plate (release-node) 34, which is connectedto terminal T4. As will be explained below, the controllable gateutilizes nanotube components to create a non-volatile switching ability,meaning that the gate will retain its open or closed state even uponinterruption of power to the circuit.

FIG. 2B illustrates a schematic for second field effect device (FED2)40. The FED2 device 40 has a terminal T1 connected to gate 42, aterminal T2 connected to drain 44, and a controllable source 46. Like atypical field effect device (e.g., transistor 10 of FIG. 1) the gatenode may be used to create a field to induce a conductive channel inchannel region 47 between the drain 44 and a (controllable) source 46.In this case, the source 46 is controllable so that it may be in open orclosed communication as illustrated with the depiction of switch 50.Switch 50 is fabricated using one or more carbon nanotubes (CNTs, orNTs). Switch 50 is preferably physically and electrically connected tocontact 52, which is connected to a terminal T3. Switch 50 may bedisplaced to contact a switch-plate 48, which is connected to acontrollable source 46. Switch 50 may be displaced to contactrelease-plate 54, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

FIG. 2C illustrates a schematic of third field effect device (FED3) 60.The FED3 device 60 has a terminal T1 connected to gate 62, a terminal T2connected to drain 64, and a controllable source 66. Like a typicalfield effect device (e.g., transistor 10 of FIG. 1) the gate node may beused to create a field to induce a conductive channel in channel region67 between the drain 64 and a (controllable) source 66. In this case,the source 66 is controllable so that it may be in open or closedcommunication as illustrated with the depiction of switch 70. Switch 70is fabricated using one or more carbon nanotubes (CNTs, or NTs). Switch70 is preferably physically and electrically connected to controllablesource 66 by contact 68. Switch 70 may be displaced to contactswitch-plate 72, which is connected to a terminal T3. Switch 70 may bedisplaced to contact dielectric surface of release-plate 76 onrelease-plate 74, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit, such non-volatilely is more fully described in incorporatedreferences and will not be repeated here for the sake of brevity.

FIG. 2D illustrates a schematic of fourth field effect device (FED4) 80.The FED4 device 80 has a terminal T1 connected to gate 82, a terminal T2connected to drain 84, and a controllable source 86. Like a typicalfield effect device (e.g., transistor 10 of FIG. 1) the gate node may beused to create a field to induce a conductive channel in channel region87 between the drain 84 and a (controllable) source 86. In this case,the source 86 is controllable so that it may be in open or closedcommunication as illustrated with by the depiction of switch 90. Switch90 is fabricated using one or more carbon nanotubes (CNTs, or NTs) asdescribed in incorporated references. Switch 90 is preferably physicallyand electrically connected to contact 92, which is connected to aterminal T3. Switch 90 may be displaced to contact a switch-plate 88,which is connected to a controllable source 86. Switch 90 may bedisplaced to contact release-plate dielectric surface 96 onrelease-plate 94, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

Field Effect Devices (FEDs) with Controllable Drains

Field effect devices (FEDs) with controllable drains may also bereferred to as nanotube (NT)-on-Drain. FIG. 2E illustrates a schematicof fifth field effect device (FED5) 100. The FED5 device 100 has aterminal T1 connected to gate 102, a controllable drain 104, and asource 106 connected to a terminal T3. Like a typical field effectdevice (e.g., transistor 10 of FIG. 1) the gate node may be used tocreate a field to induce a conductive channel in channel region 107between the (controllable) drain 104 and a source 106. In this case, thedrain 104 is controllable so that it may be in open or closedcommunication as illustrated by the depiction of switch 110. Switch 110is fabricated using one or more carbon nanotubes (CNTs, or NTs). Switch110 is preferably physically and electrically connected to controllabledrain 104 by contact 108. Switch 110 may be displaced to contactswitch-plate 112, which is connected to a terminal T2. Switch 110 may bedisplaced to contact release-plate 114, which is connected to terminalT4. As will be explained below, the controllable gate utilizes nanotubecomponents to create a non-volatile switching ability, meaning that thegate will retain its open or closed state even upon interruption ofpower to the circuit.

FIG. 2F illustrates a schematic of sixth field effect device (FED6) 120.The FED6 device 120 has a terminal T1 connected to gate 122, acontrollable drain 124, and a source 126 connected to a terminal T3.Like a typical field effect device (e.g., transistor 10 of FIG. 1) thegate node may be used to create a field to induce a conductive channelin channel region 127 between the drain 124 and a (controllable) source126. In this case, the drain 124 is controllable so that it may be inopen or closed communication as illustrated by the depiction of switch130. Switch 130 is fabricated using one or more carbon nanotubes (CNTs,or NTs). Switch 130 is preferably physically and electrically connectedto contact 132, which is connected to terminal T2. Switch 130 may bedisplaced to contact a switch-plate 128, which is connected to acontrollable drain 124. Switch 130 may be displaced to contactrelease-plate 134, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

FIG. 2G illustrates a schematic of seventh field effect device (FED7)140. The FED7 device 140 has a terminal T1 connected to gate 142, acontrollable drain 144, and a source 146 connected to a terminal T3.Like a typical field effect device (e.g., transistor 10 of FIG. 1) thegate node may be used to create a field to induce a conductive channelin channel region 147 between the (controllable) drain 144 and a source146. In this case, the drain 144 is controllable so that it may be inopen or closed communication as illustrated by the depiction of switch150. Switch 150 is fabricated using one or more carbon nanotubes (CNTs,or NTs). Switch 150 is preferably physically and electrically connectedto controllable drain 144 by contact 148. Switch 150 may be displaced tocontact switch-plate 152, which is connected to a terminal T2. Switch150 may be displaced to contact release-plate dielectric surface 156 onrelease-plate 154, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

FIG. 2H illustrates a schematic of eighth field effect device (FED8)160. The FED8 device 160 has a terminal T1 connected to gate 162, acontrollable drain 164, and a source 166 connected to a terminal T3.Like a typical field effect device (e.g., transistor 10 of FIG. 1) thegate node may be used to create a field to induce a conductive channelin channel region 167 between the (controllable) drain 164 and a source166. In this case, the drain 164 is controllable so that it may be inopen or closed communication as illustrated by the depiction of switch170. Switch 170 is fabricated using one or more carbon nanotubes (CNTs,or NTs). Switch 170 is preferably physically and electrically connectedto contact 172, which is connected to terminal T2. Switch 170 may bedisplaced to contact a switch-plate 168, which is connected to acontrollable drain 164. Switch 170 may be displaced to contactrelease-plate dielectric surface 176 on release-plate 174, which isconnected to terminal T4. As will be explained below, the controllablegate utilizes nanotube components to create a non-volatile switchingability, meaning that the gate will retain its open or closed state evenupon interruption of power to the circuit.

Field Effect Devices (FEDs) with Controllable Gates

Field effect devices (FEDs) with controllable gates may also be referredto as nanotube (NT)-on-Gate. FIG. 21 illustrates a schematic of ninthfield effect device (FED9) 180. The device 180 has a controllable gate182, a drain 184 connected to terminal T2, and a source 186 connected toa terminal T3. Like a typical field effect device (e.g., transistor 10of FIG. 1) the gate node may be used to create a field to induce aconductive channel in channel region 187 between a drain 184 and asource 186. In this case, the gate 182 is controllable so that it may bein open or closed communication as illustrated by the depiction ofswitch 190. Switch 190 is fabricated using one or more carbon nanotubes(CNTs, or NTs). Switch 190 is preferably physically and electricallyconnected to controllable gate 182 by contact 188. Switch 190 may bedisplaced to contact switch-plate 192, which is connected to a terminalT1. Switch 190 may be displaced to contact release-plate 194, which isconnected to terminal T4. As will be explained below, the controllablegate utilizes nanotube components to create a non-volatile switchingability, meaning that the gate will retain its open or closed state evenupon interruption of power to the circuit.

FIG. 2J illustrates a schematic of tenth field effect device (FED10)200. The FED10 device 200 has a terminal controllable gate 202, a drain204 connected to a terminal T2, and a source 206 connected to a terminalT3. Like a typical field effect device (e.g., transistor 10 of FIG. 1)the gate node may be used to create a field to induce a conductivechannel in channel region 207 between the drain 204 and source 206. Inthis case, the gate 202 is controllable so that it may be in open orclosed communication as illustrated by the depiction of switch 210.Switch 210 is fabricated using one or more carbon nanotubes (CNTs, orNTs). Switch 210 is preferably physically and electrically connected tocontact 212, which is connected to terminal T1. Switch 210 may bedisplaced to contact a switch-plate 208, which is connected to acontrollable gate 202. Switch 210 may be displaced to contactrelease-plate 214, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

FIG. 2K illustrates a schematic of eleventh field effect device (FED11)220. The device 220 has a controllable gate 222, a drain 224 connectedto a terminal T2, and a source 226 connected to a terminal T3. Like atypical field effect device (e.g., transistor 10 of FIG. 1) the gatenode may be used to create a field to induce a conductive channel inchannel region 227 between a drain 224 and a source 226. In this case,the gate 222 is controllable so that it may be in open or closedcommunication as illustrated by the depiction of switch 230. Switch 230is fabricated using one or more carbon nanotubes (CNTs, or NTs). Switch230 is preferably physically and electrically connected to controllablegate 222 by contact 228. Switch 230 may be displaced to contactswitch-plate 232, which is connected to a terminal T1. Switch 230 may bedisplaced to contact release-plate dielectric surface 236 onrelease-plate 234, which is connected to terminal T4. As will beexplained below, the controllable gate utilizes nanotube components tocreate a non-volatile switching ability, meaning that the gate willretain its open or closed state even upon interruption of power to thecircuit.

FIG. 2L illustrates a schematic of twelfth field effect device (FED12)240. The FED12 device 240 has a controllable gate 242, a drain 244connected to a terminal T2, and a source 246 connected to a terminal T3.Like a typical field effect device (e.g., transistor 10 of FIG. 1) thegate node may be used to create a field to induce a conductive channelin channel region 247 between the (controllable) drain 244 and a source246. In this case, the gate 242 is controllable so that it may be inopen or closed communication as illustrated by the depiction of switch250. Switch 250 is fabricated using one or more carbon nanotubes (CNTs,or NTs). Switch 250 is preferably physically and electrically connectedto contact 252, which is connected to terminal T1. Switch 250 may bedisplaced to contact a switch-plate 248, which is connected to acontrollable gate 242. Switch 250 may be displaced to contactrelease-plate dielectric surface 256 on release-plate 254, which isconnected to terminal T4. As will be explained below, the controllablegate utilizes nanotube components to create a non-volatile switchingability, meaning that the gate will retain its open or closed state evenupon interruption of power to the circuit.

As will be explained below, the controllable structures are implementedusing nanotube technology. More specifically, non-volatile switchingelements are made of ribbons of matted fabric of carbon nanotubes. Theseelements may be electromechanically deflected into an open or closedstate relative to a respective source, drain, or gate node usingelectrostatic forces. Under preferred embodiments, the construction ofthe control structures is such that once switched “ON” inherent van derWaals forces are sufficiently large (relative to a restoring forceinherent in the device geometry) so that the switching element willretain its non-volatilized state; that is, the element will retain itsstate even in the event of power interruption.

Operation of Field Effect Devices with Controllable Sources

Four schematics of field effect devices (FEDs) with controllable sourceshave been described (FIGS. 2A-D). FIGS. 3A through FIG. 9 illustrate theoperation of field effect devices with controllable sources for two ofthe FED configurations, device 80 (FIG. 2D) and device 20 (FIG. 2A). FEDdevices with controllable sources are also referred to as NT-on-Sourcedevices. For each of these two FED configurations, at least oneswitch-mode setting operation is described, followed by an example offull voltage swing circuit operation (digital switching), and an exampleof small signal analog circuit operation.

FIG. 3A illustrates a first FED configuration; field effect device 80 iscombined with resistor 302 of value R, such that one terminal ofresistor 302 is attached to FED device 80 terminal T2, and the otherside of resistor 302 is attached to power supply terminal 304 to formcircuit schematic 300. FIG. 3B illustrates circuit schematic 310 inwhich switch 90 has been activated to position 90′ to electricallyconnect switch-plate 88 with contact 92 as illustrated in FIG. 3B.Controllable source 86 is electrically connected to terminal T3 by meansof the established continuous electrical path formed by source 86connected to switch-plate 88, switch-plate 88 connected to one side ofswitch 90′, the opposite side of switch 90′ connected to contact 92, andcontact 92 connected to terminal T3.

FIG. 3C illustrates circuit schematic 310′ in which switch 90 has beenactivated to position 90″ to electrically release-plate dielectricsurface 96. Controllable source 86 is an electrically open circuited,and has no continuous electrical path to any FED4 80 device terminals.The mode-setting electrical signals applied to the terminals T1, T2, T3,and T4 of schematics 300, 310, and 310′ to cause switch 90 to switch toposition 90′ or position 90″ are illustrated in FIG. 4.

FIG. 4 illustrates the operational mode-setting voltage waveforms 311applied to terminals T1, T2, T3, and T4 to activate switch 90. Controlsignals are applied to terminals T1-T4 by a control circuit (not shown)using control lines (not shown). There is no electrical signal appliedto electrical terminal 304 during mode-setting. Column 1 illustrates theelectrical signals used to change switch 90 from position 90″, (alsoreferred to as the open (off) position), to position 90′, (also referredto as the closed (on) position). Column 2 illustrates the electricalsignals used to change switch 90 from position 90′, (also referred to asthe closed position), to position 90″, (also referred to as the openposition). The mode-setting waveforms are valid within the mode-settingtime interval illustrated under columns 1 and 2 in FIG. 4. Other timeintervals contain cross-hatched lines between voltages 0 and V_(DD),indicating that these waveforms can be anywhere within this voltagerange, and represent the circuit operating range. V_(DD) is selected tobe less than the voltage switching voltage V_(SW) to ensure that switch90 is not activated (resulting in mode-change) during circuit operation.

Mode-setting is based on electromechanical switching of carbon nanotube(NT) switch using electrostatic forces. The behavior of a NT fabric issimilar to that of a single NT, see U.S. Pat. No. 6,643,165, where theelectrostatic attractive force is due to oppositely charged surfaces 1and 2, and where the electrostatic F_(E)=K(V₁−V₂)²/(R₁₂)². For anapplied voltage, an equilibrium position of the NT, or NT fabric, isdefined by the balance of the elastic, electrostatic, and van der Waalsforces. As the NT, or NT fabric deflects, the elastic forces change.When the applied potential (voltage) difference between the nanotube anda reference electrode exceeds a certain voltage, the NT or NT fabricbecomes unstable and collapses onto the reference electrode. The voltagedifference between a NT or NT fabric, and a reference electrode thatcauses the NT or NT fabric to collapse, may be referred to as thepull-in voltage, or the collapse voltage, or the nanotube thresholdvoltage V_(NT-TH). The reference electrode may be a switch-plate, or arelease-plate, or a release-plate with a dielectric layer. Once the NTor NT fabric is in contact with, or in very close proximity to, thereference electrode (in a region of strong van der Waals force), theelectrostatic force F_(E) may be reduced to zero by removing the voltagedifference between NT or NT fabric and the reference electrode. Powermay be removed, and the NT or NT fabric remains in contact, and thusstores information in a non-volatile mode.

Column 1 of FIG. 4 illustrates the voltage and timing waveforms appliedto terminals T1-T4 of FED4 80 that force a transition of NT switch 90from position 90″, in contact with insulator surface 96 on release-plate94 as illustrated in FIG. 3C, to position 90′, in contact withswitch-plate 88 as illustrated in FIG. 3B. Switch 90 transitions fromopen to closed. Voltage V_(T4), applied to terminal T4, transitions toswitching voltage V_(SW). Voltage V_(T2) applied to terminal T2transitions to zero (0) volts. V_(T3) applied to terminal T3 transitionsto switching voltage V_(SW). Terminal T1 (connected to gate 82)transitions from zero to V_(DD) forming a channel in channel region 87,thereby driving controllable source 86 voltage V_(SOURCE) to zero. Theelectrostatic force between switch 90 in position 90″ and release-plate94 is zero. The electrostatic force between switch 90 in position 90″and switch-plate 88 is F_(E)=K(V_(SW))²/(R₁₂)², where R₁₂ is the gapseparating switch 90 from switch-plate 88. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example, any appropriate potentialdifference however, is within the scope of the invention. V_(NT-TH) is afunction of the suspended length of NT switch 90 and the gap(separation) between NT switch 90 and the switch-plate and release-plateelectrodes. Typical NT switch suspended length is 130 to 180 nm, withgaps of 10 to 20 nm, for example, but other geometries are possible solong as the switching properties work appropriately.

Column 2 of FIG. 4 illustrates the voltage and timing waveforms appliedto terminals T1-T4 of FED4 80 that force a transition of NT switch 90from position 90′, in contact with switch-plate 88 as illustrated inFIG. 3B, to position 90″, in contact with release-plate dielectricsurface 96 on release-plate 94 as illustrated in FIG. 3C. Switch 90transitions from closed to open. Voltage V_(T4), applied to terminal T4,transitions to switching voltage V_(SW). Voltage V_(T2) applied toterminal T2 transitions to zero (0) volts. V_(T3) applied to terminal T3transitions to zero volts. Terminal T1 (connected to gate 82)transitions from zero to V_(DD) forming a channel in channel region 87,thereby driving controllable source 86 voltage V_(SOURCE) to zero. Theelectrostatic force between switch 90 in position 90′ and switch-plate88 is zero. The electrostatic force between switch 90 in position 90′and release-plate 94 is F_(E)=K (V_(SW))₂/(R₁₂)₂, where R₁₂ is the gapseparating switch 90 from release-plate 94. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. The threshold voltage forswitch 90 transitions between open and closed, and closed and openpositions may be different, without effecting the operation of thedevice. If V_(SW) exceeds V_(NT-TH), then mode-setting will take place.Circuit operating voltages range from 0 to V_(DD). In order to avoidunwanted mode-setting during circuit operation, V_(DD) is less thanV_(NT-TH).

FIG. 5 illustrates the full signal (voltage) swing waveform 313operation of circuit 300, with waveforms applied to terminals T1, T2,T3, and T4. Column 1 illustrates the electrical signals applied toterminal T1-T4 for circuit schematic 310 when switch 90 is in the closedposition 90′ as illustrated in FIG. 3B. Column 2 illustrates theelectrical signals applied to terminals T1-T4 for circuit schematic 310′when switch 90 is in the open position 90″ as illustrated in FIG. 3C.Circuit schematic 310 illustrates the FED used in a simple inverterconfiguration with load resistor 302 of value R connected to voltageterminal 304 at voltage V=V_(DD). For V_(NT-TH) in the 2 to 3 voltrange, for example, V_(DD) is selected as less than 2 volts, 1.0 to 1.8volts, for example. The operation of circuit 310 is as illustrated inFIG. 5, column 1. With switch 90 in the 90′ position, the voltage V_(T4)on terminal T4 can be any value. Voltage V_(T3) applied to terminal T3is set to zero volts. A pulse V_(T1) of amplitude V_(DD) is applied toterminal T1. When V_(T1)=0, no FET conductive path is activated, theelectrical path between terminals T2 and T3 of FED4 80 is open, currentI=0, and V_(OUT)=V_(DD). When V_(T1)=V_(DD), FET 80 channel ofresistance R_(FET) is formed, in series with R_(SWITCH) of switch 90′,connecting terminals T2 and T3. The resistance of FED4 80 betweenterminals T2 and T3 is R_(FED)=R_(FET)+R_(SWITCH). R_(FET) is the FETchannel resistance, and R_(SWITCH) is the resistance of NT switch 90′.R_(SWITCH) includes the resistance between switch-plate 88 and NT 90′,the NT 90′ resistance (typically much less than the contactresistances), and the contact resistance between contact 92 and NT 90′.R_(FET) is determined by the FET electrical parameters and the width tolength ratio used in the FET design (Reference: Baker et al., “CMOSCircuit Design, Layout, and Simulation”, IEEE Press, 1998, Chapter 5“the MOSFET”, pages 83-106). By selecting W/L ratio values, R_(FET) mayrange from less than 10 Ohms to more than 10,000 Ohms. The quantumcontact resistance between metal electrodes and the NT fabric varies asa function of the fabric density (number of NTs per unit area) and thewidth of the contact. The contact resistance per fiber may vary fromless than 100 Ohms to more than 100,000 Ohms. When V_(T1)=V_(DD),current I=V_(DD)/(R+R_(FED)), andV_(T2)=V_(OUT)=V_(DD)×(R_(FED))/(R+R_(FED)). If R_(FED)<<R, thenV_(T2)=V_(OUT)≈0° volts, illustrated in FIG. 5, column 1.

Circuit schematic 310′ illustrates FED4 80 used in a simple inverterconfiguration with load resistor 302 of value R connected to voltageterminal 304 at voltage V=V_(DD). The full signal (voltage) swingoperation of circuit 310′ is as illustrated in FIG. 5, column 2. Withswitch 90 in position 90″, the FED electrical path between terminals T2and T3 is open, terminal T4 is insulated, therefore current I=0, andV_(T2)=V_(OUT)=V_(DD) for all applied voltages.

FIG. 6 illustrates the small signal (voltage) swing waveforms 315operation of circuit 300, with waveforms applied to terminals T1, T2,T3, and T4. Column 1 illustrates the electrical signals applied toterminal T1-T4 for circuit schematic 310 when switch 90 is in the closedposition 90′ as illustrated in FIG. 3B. Circuit schematic 310illustrates the FED used in a simple inverter configuration with loadresistor 302 of value R connected to voltage terminal 304 at voltageV=V_(DD). For V_(NT-TH) in the 2 to 3 volt range, for example, V_(DD) isselected as less than 2 volts, 1.0 to 1.8 volts, for example. Theoperation of circuit 310 for small signal (analog) amplification is asillustrated in FIG. 5, column 1. With switch 90 in position 90′, thevoltage V_(T4) on terminal T4 can be any value. Voltage V_(T3) appliedto terminal T3 is set to zero volts. A signal VT, of with amplitudeexceeding FET threshold voltage V_(FET-TH)(V_(FET-TH)=0.3-0.7 volts, forexample) is applied to terminal T1. Since V_(T1)>V_(FET-TH), a pathbetween terminals T2 and T3 is maintained. If R_(SWITCH) is less thanR_(FET), then the output V_(T2)=V_(OUT) of circuit 310 inverts the inputsignal and exhibits gain as illustrated in FIG. 6, column 1. Circuitgain can be calculated as described in Baker et al., “CMOS CircuitDesign, Layout, and Simulation”, IEEE Press, 1998, Chapter 9 “theMOSFET”, pages 165-181.

Circuit schematic 310′ illustrates FED4 80 used in a simple inverterconfiguration with load resistor 302 of value R connected to voltageterminal 304 at voltage V=V_(DD). The small signal (voltage) swingoperation of circuit 310′ is as illustrated in FIG. 6, column 2. Withswitch 90 in position 90″, the FED electrical path between terminals T2and T3 is open, terminal T4 is insulated, therefore current I=0, andV_(T2)=V_(OUT)=V_(DD) for all applied voltages.

In the second FED configuration, field effect device 20 is combined withfirst resistor 324 of value R, such that one terminal of resistor 324 isattached to FED device 20 terminal T2, and the other side of resistor324 is attached to power supply terminal 322 as illustrated in FIG. 7A.A second resistor 328 of value R′ is attached to FED device 20 terminalT4, and the other side of resistor 328 is attached to power supply 326to form the circuit schematic illustrated in FIG. 7A. Suchconfigurations are exemplary and other working configurations are withinthe scope of the invention.

FIG. 7B illustrates a schematic of circuit 330 in which switch 30 hasbeen activated to first position 30′ to electrically connect contact 28to switch-plate 32. Controllable source 26 is electrically connected toterminal T3 by means of the established continuous electrical pathformed by source 26 connected to contact 28; contact 28 connected to oneside of switch 30′; the opposite side of switch 30′ connected toswitch-plate 32; switch-plate 32 connected to terminal T3. FIG. 7Cillustrates a schematic of circuit 330′ in which switch 30 has beenactivated to second position 30″ and contacts release-plate 34.Controllable source 26 is electrically connected to FED1 20 deviceterminal T4. The mode-setting electrical signals applied to theterminals T1, T2, T3, and T4 of schematics 320, 330, and 330′ that causeswitch 30 to switch to first position 30′ or second position 30″ areillustrated in FIG. 8.

FIG. 8 illustrates the operational mode-setting waveforms 335 applied toterminals T1, T2, T3, and T4 to activate switch 30. Control signals areapplied to terminals T1-T4 by a control circuit (not shown) usingcontrol lines (not shown). There is no electrical signal applied toelectrical terminals 322 and 326 during mode-setting. Column 1illustrates the electrical signals used to change switch 30 fromposition 30″, also referred to as the second position, to position 30′,also referred to as the first position. Column 2 illustrates theelectrical signals used to change switch 30 from position 30′, alsoreferred to as the first position, to position 30″, also referred to asthe second position. The mode-setting waveforms are valid within themode-setting time interval illustrated under columns 1 and 2 in FIG. 8.Other time intervals contain cross-hatched lines between voltages 0 andV_(DD), indicating that these waveforms can be anywhere within thisvoltage range, and represent the circuit operating range. V_(DD) isselected to be less than the voltage switching voltage V_(SW) to ensurethat switch 30 is not activated (resulting in mode-resetting) duringcircuit operation.

Mode-setting is based on electromechanical switching of carbon nanotube(NT) switch using electrostatic forces. The behavior of a NT fabric issimilar to that of a single NT, as stated above, where the electrostaticattractive force is due to oppositely charged surfaces. Column 1 of FIG.8 illustrates the voltage and timing waveforms applied to terminalsT1-T4 of FED1 20 that force a transition of NT switch 30 from secondposition 30″, in contact with release-plate 94 as illustrated in FIG.7C, to first position 30′, in contact with switch-plate 32 asillustrated in FIG. 7B. Voltage V_(T4), applied to terminal T4,transitions to zero volts. Voltage V_(T2) applied to terminal T2transitions to zero (0) volts. V_(T3) applied to terminal T3 transitionsto switching voltage V_(SW). Terminal T1 (connected to gate 22)transitions from zero to V_(DD) forming a channel in channel region 27,thereby driving controllable source 26 voltage V_(SOURCE) to zero. Theelectrostatic force between switch 30 in position 30″ and release-plate34 is zero. The electrostatic force between switch 30 in position 30″and switch-plate 32 is F_(E)=K (V_(SW))²/(R₁₂)², where R₁₂ is the gapseparating switch 30 from switch-plate 32. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. Typical NT switch suspendedlength is 130 to 180 nm, with gaps of 10 to 20 nm, for example.

Column 2 of FIG. 8 illustrates the voltage and timing waveforms appliedto terminals T1-T4 of FED 20 that force a transition of NT switch 30from first position 30′, in contact with switch-plate 32 as illustratedin FIG. 7B, to second position 30″, in contact with release-plate 34 asillustrated in FIG. 7C. Voltage V_(T4), applied to terminal T4,transitions to switching voltage V_(SW). Voltage V_(T2) applied toterminal T2 transitions to zero (0) volts. V_(T3) applied to terminal T3transitions to zero volts, terminal T1 (connected to gate 22)transitions from zero to V_(DD) forming a channel in channel region 27,thereby driving controllable source 26 voltage V_(SOURCE) to zero. Theelectrostatic force between switch 30 in position 30′ and switch-plate28 is zero. The electrostatic force between switch 30 in position 30′and release-plate 34 is F_(E)=(V_(SW))²/(R₂)², where R₁₂ is the gapseparating switch 30 from release-plate 34. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. The threshold voltage forswitch 30 transitions between second and first, and first and secondpositions may be different, without effecting the operation of thedevice. If V_(SW) exceeds V_(NT-TH), then mode-setting will take place.Circuit operating voltages range from 0 to V_(DD). In order to avoidunwanted mode-setting during circuit operation, V_(DD) is less thanV_(NT-TH).

FIG. 9 illustrates the full signal (voltage) swing waveforms 345operation of circuit 320, with waveforms applied to terminals T1, T2,T3, and T4. Column 1 illustrates the electrical signals applied toterminal T1-T4 for circuit 330 when switch 30 is in the first position30′ as illustrated in FIG. 7B. Column 2 illustrates the electricalsignals applied to terminals T1-T4 for circuit 330′ when switch 30 is inthe second position 30″ as illustrated in FIG. 7C. Circuit 330illustrates a FED used in a simple inverter configuration with loadresistor 324 of value R connected to voltage terminal 322 at voltageV=V_(DD). For V_(NT-TH) in the 2 to 3 volt range, for example, V_(DD) isselected as less than 2 volts, 1.0 to 1.8 volts, for example. Theoperation of circuit 330 is as illustrated in FIG. 9, column 1. Withswitch 30 in the 30′ position, the voltage V_(T4) on terminal T4 can beany value. Voltage V_(T3) applied to terminal T3 is set to zero volts. Apulse V_(T1) of amplitude V_(DD) is applied to terminal T1. WhenV_(T1)=0, no FET conductive path is activated, the electrical pathbetween terminals T2 and T3 of FED 20 is open, current I=0, andV_(T2)=V_(OUT)=V_(DD). When V_(T1)=V_(DD), FET channel 27 of resistanceR_(FET) is formed, in series with R_(SWITCH) of switch 30′, connectingterminals T2 and T3. The resistance of FED 20 between terminals T2 andT3 is R_(FED)=R_(FET)+^(RSW) _(ITCH). R_(FET) is the FET channelresistance, and R_(SWITCH) is the resistance of NT switch 30′.R_(SWITCH) includes the resistance between contact 28 and NT 30′, the NT30′ resistance (typically much less than the contact resistances), andthe resistance between switch-plate 32 and NT 30′. R_(FET) is determinedby the FET electrical parameters and the width to length ratio used inthe FET design (Reference: Baker et al., “CMOS Circuit Design, Layout,and Simulation”, IEEE Press, 1998, Chapter 5 “the MOSFET”, pages83-106). By selecting W/L ratio values, R_(FET) may range from less than10 Ohms to more than 10,000 Ohms. The quantum contact resistance betweenmetal electrodes and the NT fabric varies as a function of the fabricdensity (number of NTs per unit area) and the width of the contact. Thecontact resistance may vary from less than 100 Ohms to more than 100,000Ohms. When V_(T1)=V_(DD), current I=V_(DD)/(R+R_(FED)), andV_(T2)=V_(OUT)=V_(DD)×(R_(FED))/(R+R_(FED)). If R_(FED)<<R, thenV_(T2)=V_(OUT)≈0 volts, illustrated in FIG. 9, column 1.

The schematic of circuit 330′ illustrates a FED used in a more complexcircuit configuration with load resistor 324 of value R connected tovoltage terminal 322 at voltage V=V_(DD), and resistor 328 of value R′connected to voltage terminal 326 at voltage zero. For V_(NT-TH) in the2 to 3 volt range, for example, V_(DD) is selected as less than 2 volts,1.0 to 1.8 volts, for example. The operation of circuit 330′ is asillustrated in FIG. 9, column 2. With switch 30 in the 30′ position, thevoltage V_(T3) on terminal T3 can be any value. A pulse V_(T1) ofamplitude V_(DD) is applied to terminal T1. When V_(T1)=0, no FETconductive path is activated, the electrical path between terminals T2and T4 of FED1 20 is open, current I=0, and V_(T2)=V_(OUT)=V_(DD), andV_(T4)=0. When V_(T1)=V_(DD), FET channel 27 of resistance R_(FET) isformed, in series with R_(SWITCH) of switch 30″, connecting terminals T2and T4. The resistance of FED 20 between terminals T2 and T4 isR_(FED)=R_(FET)+R_(SWITCH). R_(FET) is the FET channel resistance, andR_(SWITCH) is the resistance of NT switch 30″. R_(SWITCH) includes theresistance between contact 28 and NT 30″, the NT 30″ resistance (usuallymuch less than the contact resistances), and the resistance betweenrelease-plate 34 and NT 30″. R_(FET) is determined by the FET electricalparameters and the width to length ratio used in the FET design. Byselecting W/L ratio values, R_(FET) may range from less than 10 Ohms tomore than 10,000 Ohms. The quantum contact resistance between metalelectrodes and the NT fabric varies as a function of the fabric density(number of NTs per unit area) and the width of the contact. The contactresistance may vary from less than 100 Ohms to more than 100,000 OhmsWhen V_(T1)=V_(DD), current I=V_(DD)/(R+R′+R_(FED)),V_(T2)=V_(OUT)=V_(DD) X (R′+R_(FED))/(R+R′+R_(FED)), andV_(T4)=V_(DD)×(R′)/(R+R′+R_(FED)). If R_(FED)<<R, and R′=R, thenV_(T2)=V_(OUT)=V_(DD)/2, and V_(T4)=V_(DD)/2, as illustrated in FIG. 9,column 2.

In the example of the operation of circuit 320 (FIG. 7A), circuitoperation for two switch-mode settings were described, one for switch 30in first position 30′ as illustrated in FIG. 7B, and the other forswitch 30 in the second position 30″ as illustrated in FIG. 7C. Thevoltages on FED terminals T2 and T4 varied as a function of theswitch-mode settings. FED1 20 may also be used in other applications.For example, a first network may be connected to terminal T2, a secondnetwork may be connected to terminal T3, and a third network may beconnected to terminal T4. When FED1 20 switch 30 is in the firstposition 30′ (FIG. 7B), a first network connected to terminal T2 isconnected to a second network connected to terminal T3. When FED1 20switch 30 is in the second position 30″, a first network connected toterminal T2 is connected to a third network connected to terminal T4.Thus, in this application, FED1 20 is used to route signals from a firstnetwork to a second network, or instead, to a third network. The networkconfiguration remains in place even if power is turned off because FED120 is a non-volatile device.

Operation of Field Effect Devices with Controllable Drains

Four schematics of field effect devices (FEDs) with controllable drainshave been described (FIGS. 2E-H). FIGS. 10A-12 illustrates the operationof field effect devices with controllable drains for one of the FEDconfigurations, FED8 device 160 (FIG. 2H). As stated above, FED deviceswith controllable drains are also referred to as NT-on-Drain devices. Aswitch-mode setting operation is described, followed by an example offull voltage swing circuit operation (digital switching).

Field effect device FED8 160 is combined with resistor 364 of value R,such that one terminal of resistor 364 is attached to FED8 device 160terminal T2, and the other side of resistor 364 is attached to powersupply terminal 362 to form circuit schematic 360 as illustrated in FIG.10A.

FIG. 10B illustrates circuit schematic 370 in which switch 170 has beenactivated to position 170′ to electrically connect switch-plate 168 tocontact 172. Controllable drain 164 is electrically connected toterminal T2 by means of the established continuous electrical pathformed by drain 164 connected to switch-plate 168; switch-plate 168connected to one side of switch 170′; the opposite side of switch 170′connected to contact 172; contact 172 connected to terminal T2.

FIG. 10C illustrates circuit schematic 370′ in which switch 170 has beenactivated to position 170″ to contact release-plate dielectric surface176. Controllable drain 164 is electrically open circuited, and has nocontinuous electrical path to any terminals of FED8 160 device. Themode-setting electrical signals applied to the terminals T1, T2, T3, andT4 of schematics 360, 370, and 370′ to cause switch 170 to switch toposition 170′ or position 170″ are illustrated in FIG. 11.

FIG. 11 illustrates the operational mode-setting waveforms 355 appliedto terminals T1, T2, T3, and T4 to activate switch 170. Control signalsare applied to terminals T1-T4 by a control circuit (not shown) usingcontrol lines (not shown). There is no electrical signal applied toelectrical terminal 362. Column 1 illustrates the electrical signalsused to change switch 170 from position 170″, also referred to as theopen position, to position 170′, also referred to as the closedposition. Column 2 illustrates the electrical signals used to changeswitch 170 from position 170′, also referred to as the closed position,to position 170″, also referred to as the open position. Themode-setting waveforms are valid within the mode-setting time intervalillustrated under columns 1 and 2 in FIG. 11. Other time intervalscontain cross-hatched lines between voltages 0 and V_(DD), indicatingthat these waveforms can be anywhere within this voltage range, andrepresent the circuit operating range. V_(DD) is selected to be lessthan the voltage switching voltage V_(SW) to ensure that switch 170 isnot activated (resulting in mode-resetting) during circuit operation.

Mode-setting is based on electromechanical switching of carbon nanotube(NT) switch using electrostatic forces. As stated above, the behavior ofa NT fabric is similar to that of a single NT, where the electrostaticattractive force is due to oppositely charged surfaces. Column 1 of FIG.11 illustrates the voltage and timing waveforms applied to terminalsT1-T4 of FED8 160 that force a transition of NT switch 170 from position170″, in contact with insulator surface 176 on release-plate 174 asillustrated in FIG. 10C, to position 170′, in contact with switch-plate168 as illustrated in FIG. 10B. Switch 170 transitions from open toclosed. Voltage V_(T4), applied to terminal T4, transitions to switchingvoltage V_(SW). Voltage V_(T2) applied to terminal T2 transitionsswitching voltage V_(SW). V_(T3) applied to terminal T3 transitions tozero volts. Terminal T1 (connected to gate 162) transitions from zero toV_(DD) forming a channel in channel region 167, thereby drivingcontrollable drain 164 voltage V_(DRAIN) to zero. The electrostaticforce between switch 170 in position 170″ and release-plate 174 is zero.The electrostatic force between switch 170 in position 170″ andswitch-plate 168 is F_(E)=K (V_(SW))²/(R₁₂)², where R₁₂ is the gapseparating switch 170 from switch-plate 168. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. V_(NT-TH) is a function of thesuspended length of NT switch 170 and the gap (separation) between NTswitch 170 and the switch-plate and release-plate electrodes. Typical,but non-exclusive exemplary ranges for NT switch suspended length is 130to 180 nm, with gaps of 10 to 20 nm.

Column 2 of FIG. 11 illustrates the voltage and timing waveforms appliedto terminals T1-T4 of FED8 160 that force a transition of NT switch 170from position 170′, in contact with switch-plate 168 as illustrated inFIG. 10B, to position 170″, in contact with release-plate dielectricsurface 176 on release-plate 174 as illustrated in FIG. 10C. Switch 170transitions from closed to open. Voltage V_(T4), applied to terminal T4,transitions to switching voltage V_(SW). Voltage V_(T2) applied toterminal T2 transitions to zero (0) volts. V_(T3) applied to terminal T3transitions to zero volts. Terminal T1 (connected to gate 162)transitions from zero to V_(DD) forming a channel in channel region 167,thereby driving controllable drain 164 voltage V_(DRAIN) to zero. Theelectrostatic force between switch 170 in position 170′ and switch-plate168 is zero. The electrostatic force between switch 170 in position 170′and release-plate 174 is F_(E)=K(V_(SW))²/(R₁₂)², where R₁₂ is the gapseparating switch 170 from release-plate 174. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. The threshold voltage forswitch 170 transitions between open and closed, and closed and openpositions may be different, without effecting the operation of thedevice. If V_(SW) exceeds V_(NT-TH), then mode-setting will take place.Circuit operating voltages range from 0 to V_(DD). In order to avoidunwanted mode-setting during circuit operation, V_(DD) is less thanV_(NT-TH).

FIG. 12 illustrates the full signal (voltage) swing waveforms 365operation of circuit 360, with waveforms applied to terminals T1, T2,T3, and T4. Column 1 illustrates the electrical signals applied toterminal T1-T4 for circuit schematic 370 when switch 170 is in theclosed position 170′ as illustrated in FIG. 10B. Column 2 illustratesthe electrical signals applied to terminals T1-T4 for circuit schematic370′ when switch 170 is in the open position 170″ as illustrated in FIG.10C. Circuit schematic 370 illustrates the FED used in a simple inverterconfiguration with load resistor 364 of value R connected to voltageterminal 362 at voltage V=V_(DD). For V_(NT-TH) in the 2 to 3 voltrange, for example, V_(DD) is selected as less than 2 volts, 1.0 to 1.8volts, for example. The operation of circuit 370 is as illustrated inFIG. 12, column 1. With switch 170 in the 170′ position, the voltageV_(T4) on terminal T4 can be any value. Voltage V_(T3) applied toterminal T3 is set to zero volts. A pulse V_(T1) of amplitude V_(DD) isapplied to terminal T1. When V_(T1)=0, no FET conductive path isactivated, the electrical path between terminals T2 and T3 of FED8 160is open, current I=0, and V_(OUT)=V_(DD). When V_(T1)=V_(DD), FET 167channel of resistance R_(FET) is formed, in series with R_(SWITCH) ofswitch 170′, connecting terminals T2 and T3. The resistance of FED8 160between terminals T2 and T3 is R_(FED)=R_(FET)+R_(SWITCH). R_(FET) isthe FET channel resistance, and R_(SWITCH) is the resistance of NTswitch 170′. R_(SWITCH) includes the resistance between switch-plate 168and NT 170′, the NT 170′ resistance (typically much less than thecontact resistances), and the contact resistance between contact 172 andNT 170′. R_(FET) is determined by the FET electrical parameters and thewidth to length ratio used in the FET design. By selecting W/L ratiovalues, R_(FET) may range from less than 10 Ohms to more than 10,000Ohms. The quantum contact resistance between metal electrodes and the NTfabric varies as a function of the fabric density (number of NTs perunit area) and the width of the contact. The contact resistance may varyfrom less than 100 Ohms to more than 100,000 Ohms. When V_(T1)=V_(DD),current I=V_(DD)/(R+R_(FED)), andV_(T2)=V_(OUT)=V_(DD)×(R_(FED))/(R+R_(FED)). If R_(FED)<<R, thenV_(T2)=V_(OUT)≈0 volts, illustrated in FIG. 12, column 1.

Circuit schematic 370′ illustrates FED8 160 used in a simple inverterconfiguration with load resistor 364 of value R connected to voltageterminal 362 at voltage V=V_(DD). The full signal (voltage) swingoperation of circuit 370′ is as illustrated in FIG. 12, column 2. Withswitch 90 in position 90″, the FED electrical path between terminals T2and T3 is open, terminal T4 is insulated, therefore current I=0, andV_(T2)=V_(OUT)=V_(DD) for all applied voltages.

Operation of Field Effect Devices with Controllable Gates

Four schematics of field effect devices (FEDs) with controllable gateshave been described (FIGS. 2I-L). FIGS. 13A-16 illustrates the operationof field effect devices with controllable gates for one of the FEDconfigurations, FED11 device 240 (FIG. 2L). FED devices withcontrollable gates are also referred to as NT-on-Gate devices. Aswitch-mode setting operation is described, followed by an example offull voltage swing circuit operation (digital switching).

FIG. 13A illustrates FED11 240. FED11 240 is combined with resistor 886of value R, such that one terminal of resistor 886 is attached to FED11device 240 terminal T2, and the other side of resistor 886 is attachedto power supply terminal 884 to form circuit schematic. FED11 240terminal T2 is connected to FET drain 244; terminal T3 is connected toFET source 246; terminal T4 is connected to release plate 254. FIG. 13Billustrates circuit schematic 390 in which switch 250 has been activatedto position 250′ to electrically connect switch-plate 248 to contact252. Controllable gate 242 is electrically connected to terminal T1 bymeans of the established continuous electrical path formed by gate 242connected to switch-plate 248; switch-plate 248 connected to one side ofswitch 250′; the opposite side of switch 250′ connected to contact 252;contact 252 connected to terminal T1. The combination of contact 252area and NT fabric layer switch 250 area may be referred to as the NTcontrol gate, because the voltage applied to this control gate controlsthe FET channel region 247 electrical characteristics.

FIG. 13C illustrates circuit schematic 390′ in which switch 250 has beenactivated to position 250″ to contact release-plate dielectric surface256. Controllable gate 242 is electrically open circuited, and has nocontinuous electrical path to any FED 249 device terminals.

FIG. 13A also depicts a FED11 240 with the coupling capacitances bothinherent in the device and designed for the device, and corresponds toFIG. 14 which illustrates cross section 400 of the FED11 240.Capacitance C_(1G) is the capacitance between contact 252 and switch 250combined areas (i.e., nanotube fabric-based switch 250) and switch-plate248 area that connects to polysilicon gate 242 using connecting contact(connecting stud, for example) 243. C_(G-CH) is the capacitance betweenthe polysilicon gate 242 and the channel region 247 (FET gate oxidecapacitance). C_(CH-SUB) is the depletion capacitance, in depletedregion 402, between the channel region 247 and substrate 382. Thesubstrate 382 voltage is controlled using substrate contact 383, and isat zero volts in this example. Source diffusion 246 is connected toFED11 240 terminal T3, and drain diffusion 244 is connected to FED11 240terminal T2. The nanotube (NT) fabric layer switch 250 is mechanicallysupported at both ends. Contact 252 acts as both electrical contact andmechanical support, and support 253 provides the other mechanicalsupport (support 253 may also provide an additional electricalconnection as well) as illustrated in FIG. 14.

Switch 250 in closed position 250′ (FIG. 13B) is illustrated by thedeflected NT fabric layer in contact with switch-plate 248. The closedposition is the “ON” state, the polysilicon gate 242 is in contact withthe nanotube fabric layer switch 250 (i.e., it is not floating) bycontact 243. The polysilicon gate voltage is defined by the voltage ofthe nanotube control gate. The nanotube control gate includes thecontact 252 area and the NT fabric-based switch 250 area (not drawn toscale).

Switch 250 in open position 250″ is illustrated by the deflected NTfabric layer in contact with surface 256 of insulator 404. FED11 device240 terminal T4 is connected to release-plate 254 with insulator 404.The open position is the “OFF” state, the polysilicon gate is not incontact with the nanotube control gate. Thus, the polysilicon gatevoltage floats, and the floating gate (FG) voltage has a value thatdepends on the capacitance coupling network in the device. The value ofdiffusion capacitance C_(CH-SUB) can be modulated by the voltage appliedto the drain 244 (source 246 may float, or may be at the voltage appliedto drain 244), and may be used to set the floating gate (FG) voltagewhen switch 250 is in open position 250″. However, as used during write,drain 244 voltage (V_(DRAIN)=0) and C_(CH-SUB) is not part of thenetwork, and voltage V_(T1) is used to set the state of switch 250. Theprinciple of FET channel modulation using drain voltage is illustratedin U.S. Pat. No. 6,369,671.

If voltage on drain 244 equals zero (V_(DRAIN)=0), the channel 247remains as an inverted region, and capacitor C_(CH-SUB) is not part ofthe capacitor network. Capacitor C_(G-CH) holds polysilicon gate 242 ata relatively low voltage, which is transmitted to switch plate 248 bycontact 243. Therefore, a relatively high voltage appears between switch250 and switching plate 248, across capacitor C_(1G), and nanotubefabric layer switch 250 switches from open (“OFF”) position 250″ toclosed (“ON”) position 250′.

FIG. 15 illustrates mode-setting electrical signals applied to theterminals T1, T2, T3, and T4 of schematics 380, 390, and 390′ to causeswitch 250 to switch to position 250′ or position 250″. FIG. 15illustrates the operational mode-setting waveforms 375 applied toterminals T1, T2, T3, and T4 of FED11 240 to activate switch 250.Control signals are applied to terminals T1-T4 by a control circuit (notshown) using control lines (not shown). There is no electrical signalapplied to electrical terminal 884 during mode-setting. Column 1 of FIG.15 illustrates the electrical signals used to change switch 250 fromposition 250″, also referred to as the open (“OFF”) position, toposition 250′, also referred to as the closed (“ON”) position. Column 2illustrates the electrical signals used to change switch 250 fromposition 250′, also referred to as the closed (“ON”) position, toposition 250″, also referred to as the open (“OFF”) position. Themode-setting waveforms are valid within the mode-setting time intervalillustrated under columns 1 and 2 in FIG. 15. Other time intervalscontain cross-hatched lines between voltages 0 and V_(DD), indicatingthat these waveforms can be anywhere within this voltage range, andrepresent the circuit operating range. V_(DD) is selected to be lessthan the voltage switching voltage V_(SW) to ensure that switch 250 isnot activated (resulting in mode-resetting) during circuit operation.

Mode-setting is based on electromechanical switching of carbon nanotube(NT) switch using electrostatic forces. Column 1 of FIG. 15 illustratesthe voltage and timing waveforms applied to terminals T1-T4 of FED11 240that force a transition of NT switch 250 from position 250″, in contactwith insulator surface 256 on release-plate 254 as illustrated in FIGS.13C and 14A, to position 250′, in contact with switch-plate 248 asillustrated in FIGS. 13B and 14A. Switch 250 transitions from open toclosed. Voltage V_(T4), applied to terminal T4, transitions to switchingvoltage V_(SW). Voltage V_(T2) applied to terminal T2 transitions tozero. V_(T3) applied to terminal T3 transitions to zero volts. TerminalT1 (connected to NT fabric switch 250 through control gate contact 252)transitions from zero to switching voltage V_(SW) forming a channel inchannel region 247. The electrostatic force between switch 250 inposition 250″ and release-plate 254 is zero. The electrostatic forcebetween switch 250 in position 250″ and switch-plate 248 isF_(E)=K(V_(SW)−V_(G))²/(R₁₂)², where R₁₂ is the gap separating switch250 from switch-plate 248. V_(G) is determined by the relative values ofcapacitances C_(1G) and C_(G-CH) (FIG. 14). C_(1G) is typically designedto be 0.25 times the capacitance C_(G-CH) (C_(1G)=0.25 C_(G-CH)). Gatevoltage V_(G)=V_(SW)×C_(1G)/(C_(1G)+C_(G-CH)); V_(G) =0.2 V_(SW). If thevoltage difference required between switch 250 and switch-plate 248 toactivate switch 250 is 2.5 volts, for example, then switching voltageV_(SW) greater than approximately 3.2 volts is required.

Column 2 of FIG. 15 illustrates the voltage and timing waveforms appliedto terminals T1-T4 of FED11 240 that force a transition of NT switch 250from position 250′, in contact with switch-plate 248 as illustrated inFIGS. 13B and 14A, to position 250″, in contact with release-platedielectric surface 256 on release-plate 254 as illustrated in FIG. 13C.Switch 250 transitions from closed to open. Voltage V_(T4), applied toterminal T4, transitions to switching voltage V_(SW). Voltage V_(T2)applied to terminal T2 transitions is between zero and 1 volt (as highas V_(DD) is acceptable). V_(T3) applied to terminal T3 transitions tozero to 1 volt (as high as V_(DD) is acceptable). Terminal T1 (connectedto NT switch 250 by contact 252) transitions to zero volts. Theelectrostatic force between switch 250 in position 250′ and switch-plate248 is zero. The electrostatic force between switch 250 in position 250′and release-plate 254 is F_(E)=K (V_(W))₂/(R₁₂)², where R₁₂ is the gapseparating switch 250 from release-plate 254. Typical V_(NT-TH) voltagesmay range from 2 to 3 volts, for example. The threshold voltage forswitch 250 transitions between open (“OFF”) and closed (“ON”), andclosed (“ON”) and open (“OFF”) positions may be different, withouteffecting the operation of the device. If V_(SW) exceeds V_(NT-TH), thenmode-setting will take place. Circuit operating voltages range from 0 toV_(DD). In order to avoid unwanted mode-setting during circuitoperation, V_(DD) is less than V_(NT-TH).

The threshold voltage V_(FET-TH) of the FET device with gate 242, drain244, and source 246 that forms a portion of FED11 240 is modulated bythe position of NT fabric switch 250. FIG. 16 illustrates thecurrent-voltage (I-V) characteristic 385 of FED11 240 for switch 250 inthe closed (“ON”) state (switch 250 in position 250′) and the open(“OFF”) state (switch 250 in position 250″). For switch 250 in theclosed state, V_(G)=V_(T1), current I flows when V_(T1)=V_(G) is greaterthan FET threshold voltage V_(FET-TH)=0.4 to 0.7 volts. Current I flowsbetween terminals T2 and T3 of FED11 240. For switch 250 is in the openstate, current I flows between terminals T2 and T3 of FED11 240 whenV_(T1) is greater than 1.4 volts. At V_(T1)32 1.4 volts, capacitivecoupling raises FET gate voltage V_(G) to greater than 0.7 volts, andcurrent flows between terminals of FED11 240 device. The state of FED11240 device may be detected by applying V_(T1) voltage of 1.2 volts. IfFED11 240 is in the closed state (also referred to as the written orprogrammed state), then current I will flow when V_(T1)=1.2 volts. IfFED11 240 is in the open state (also referred to as the released orerased state), then no current (I=0) will flow when V_(T1)=1.2 volts.

Nanotube Random Access Memory Using FEDs with Controllable Sources

Nanotube Random Access Memory (NRAM) Systems and Circuits, with Same

Non-volatile field effect devices (FEDs) 20, 40, 60, and 80 withcontrollable sources may be used as cells and interconnected into arraysto form non-volatile nanotube random access memory (NRAM) systems. Thememory cells contain one select device (transistor) T and onenon-volatile nanotube storage element NT (1T/1NT cells). By way ofexample, FED4 80 (FIG. 2D) is used to form a non-volatile NRAM memorycell that is also referred to as a NT-on-Source memory cell.

NT-On-Source NRAM Memory Systems and Circuits with Parallel Bit andReference Lines, and Parallel Word and Release Lines

NRAM 1T/1NT memory arrays are wired using four lines. Word line WL isused to gate select device T, bit line BL is attached to a shared drainbetween two adjacent select devices. Reference line REF is used tocontrol the NT switch voltage of storage element NT, and release line RLis used to control the release-plate of storage element NT. In this NRAMarray configuration, REF is parallel to BL and acts as second bit line,and RL is parallel to WL and acts as a second word line. TheNT-on-source with REF line parallel to BL and RL parallel WL is thepreferred NT-on-source embodiment.

FIG. 17A depicts non-volatile field effect device FED4 80 with memorycell wiring to form NT-on-Source memory cell 1000 schematic. Memory cell1000 operates in a source-follower mode. Word line (WL) 1200 connects toterminal T1 1220 of FED4 80; bit line (BL) 1300 connects to terminal T21320 of FED4 80; reference line (REF) 1400 connects to terminal T3 1420of FED4 80; and release line (RL) 1500 connects to terminal T4 1520 ofFED4 80. Memory cell 1000 performs write and read operations, and storesthe information in a non-volatile state. The FED4 80 layout dimensionsand operating voltages are selected to optimize memory cell 1000. Memorycell 1000 FET select device (T) gate 1040 corresponds to gate 82; drain1060 corresponds to drain 84; and controllable source 1080 correspondsto controllable source 86. Memory cell 1000 nanotube (NT) switch-plate1120 corresponds to switch-plate 88; NT switch 1140 corresponds to NTswitch 90; release-plate insulator layer surface 1160 corresponds torelease-plate insulator layer surface 96; and release-plate 1180corresponds to release-plate 94. The interconnections between theelements of memory cell 1000 schematic correspond to the interconnectionof the corresponding interconnections of the elements of FED4 80. BL1300 connects to drain 1060 through contact 1320; REF 1400 connects toNT switch 1140 through contact 1420; RL 1500 connects to release-plate1180 by contact 1520; WL 1200 interconnects to gate 1040 by contact1220. The non-volatile NT switching element 1140 may be caused todeflect toward switch-plate 1120 via electrostatic forces to closed(“ON”) position 1140′ to store a logic “1” state as illustrated in FIG.17B. The van der Waals force holds NT switch 1140 in position 1140′.Alternatively, the non-volatile NT switching element 1140 may be causedto deflect to insulator surface 1160 on release-plate 1180 viaelectrostatic forces to open (“OFF”) position 1140″ to store a logic “0”state as illustrated in FIG. 17C. The van der Waals force holds NTswitch 1140 in position 1140″. Non-volatile NT switching element 1140may instead be caused to deflect to an open (“OFF”) near-mid pointposition 1140′″ between switch-plate 1120 and release-plate 1180,storing an apparent logic “0” state as illustrate in FIG. 17D. However,the absence of a van der Waals retaining force in this open (“OFF”)position is likely to result in a memory cell disturb that causes NTswitch 1140 to unintentionally transition to the closed (“ON”) position,and is not desirable. Sufficient switching voltage is needed to ensurethat the NT switch 1140 open (“OFF”) position is position 1140″. Thenon-volatile element switching via electrostatic forces is as depictedby element 90 in FIG. 2D. Voltage waveforms 311 used to generate therequired electrostatic forces are illustrated in FIG. 4.

NT-on-Source schematic 1000 forms the basis of a non-volatile storage(memory) cell. The device may be switched between closed storage state“1” (switched to position 1140′) and open storage state “0” (switched toposition 1140″), which means the controllable source may be written toan unlimited number of times to as desired. In this way, the device maybe used as a basis for a non-volatile nanotube random access memory,which is referred to here as a NRAM array, with the ‘N’ representing theinclusion of nanotubes.

FIG. 18 represents an NRAM memory array 1700, according to preferredembodiments of the invention. Under this arrangement, an array is formedwith m×n (only exemplary portion being shown) of non-volatile cellsranging from cell C0,0 to cell Cm−1,n−1. NRAM memory array 1700 may bedesigned using one large m×n array, or several smaller sub-arrays, whereeach sub-array if formed of m×n cells. To access selected cells, thearray uses read and write word lines (WL0, WL1, . . . WLn−1), read andwrite bit lines (BL0, BL1, . . . BLm−1), read and write reference lines(REF0, REF1, . . . REFm−1), and read and write release lines (RL0, RL1,. . . RLn−1). Non-volatile cell C0,0 includes a select device T0,0 andnon-volatile storage element NT0,0. The gate of T0,0 is coupled to WL0,and the drain of T0,0 is coupled to BL0. NT0 is the non-volatilelyswitchable storage element where the NT0,0 switch-plate is coupled tothe source of T0,0, the switching NT element is coupled to REF0, and therelease-plate is coupled to RL0. Connection 1720 connects BL0 to shareddrain of select devices T0,0 and T0,1. Word, bit, reference, and releasedecoders/drivers are explained further below.

Under preferred embodiments, nanotubes in NRAM array 1700 may be in the“ON” “1” state or the “OFF” “0” state. The NRAM memory allows forunlimited read and write operations per bit location. A write operationincludes both a write function to write a “1” and a release function towrite a “0”. By way of example, a write “1” to cell C0,0 and a write “0”to cell C1,0 is described. For a write “1” operation to cell C0,0,select device T0,0 is activated when WL0 transitions from 0 to V_(DD),BL0 transitions from V_(DD) to 0 volts, REF0 transitions from V_(DD) toswitching voltage V_(SW), and RL0 transitions from V_(DD) to switchingvoltage V_(SW). The release-plate and NT switch of the non-volatilestorage element NT0,0 are each at V_(SW) resulting in zero electrostaticforce (because the voltage difference is zero). The zero BL0 voltage isapplied to the switch-plate of non-volatile storage element NT0,0 by thecontrolled source of select device T0,0. The difference in voltagebetween the NT0,0 switch-plate and NT switch is V_(SW) and generates anattracting electrostatic force. If V_(SW) exceeds the nanotube thresholdvoltage V_(NT-TH), the nanotube structure switches to “ON” state orlogic “1” state, that is, the nanotube NT switch and switch-plate areelectrically connected as illustrated in FIG. 17B. The near-Ohmicconnection between switch-plate 1120 and NT switch 1140 in position1140′ represents the “ON” state or “1” state. If the power source isremoved, cell C0,0 remains in the “ON” state.

For a write “0” (release) operation to cell C1,0, select device T1,0 isactivated when WL0 transitions from 0 to V_(DD), BL1 transitions fromV_(DD) to 0 volts, REF 1 transitions from V_(DD) to zero volts, and RL0transitions from V_(DD) to switching voltage V_(SW). The zero BL1voltage is applied to the switch-plate of non-volatile storage elementNT1,0 by the controlled source of select device T1,0, and zero volts isapplied the NT switch by REF1, resulting in zero electrostatic forcebetween switch-plate and NT switch. The non-volatile storage elementNT1,0 release-plate is at switching voltage V_(SW) and the NT switch isat zero volts generating an attracting electrostatic force. If V_(SW)exceeds the nanotube threshold voltage V_(NT-TH), the nanotube structureswitches to the “OFF” state or logic “0” state, that is, the nanotube NTswitch and the surface of the release-plate insulator are in contact asillustrated in FIG. 17C. The non-conducting contact between insulatorsurface 1160 on release-plate 1180 and NT switch 1140 in position 1140″represents the “OFF” state or “0” state. If the power source is removed,cell C1,0 remains in the “OFF” state.

An NRAM read operation does not change (destroy) the information in theactivated cells, as it does in a DRAM, for example. Therefore the readoperation in the NRAM is characterized as a non-destructive readout (orNDRO) and does not require a write-back after the read operation hasbeen completed. For a read operation of cell C0,0, BL0 is driven high toV_(DD) and allowed to float. WL0 is driven high to V_(DD) and selectdevice T0,0 turns on. REF0 is at zero volts, and RL0 is at V_(DD). Ifcell C0,0 stores an “ON” state (“1” state) as illustrated in FIG. 17B,BL0 discharges to ground through a conductive path that includes selectdevice T0,0 and non-volatile storage element NT0,0 in the “ON” state,the BL0 voltage drops, and the “ON” state or “1” state is detected by asense amplifier/latch circuit (not shown) that records the voltage dropby switching the latch to a logic “1” state. BL0 is connected by theselect device T0,0 conductive channel of resistance R_(FET) to theswitch-plate of NT0,0. The switch-plate of NT0,0 in the “ON” statecontacts the NT switch with contact resistance and the NT switchcontacts reference line REF0 with contact resistance R_(C). The totalresistance in the discharge path is R_(FET)+R_(SW)+R_(C). Otherresistance values in the discharge path, including the resistance of theNT switch, are much smaller and may be neglected.

For a read operation of cell C1,0, BL1 is driven high to V_(DD) andallowed to float. WL0 is driven high to V_(DD) and select device T1,0turns on. REF1=0, and RL0 is at V_(DD). If cell C1,0 stores an “OFF”state (“0” state) as illustrated in FIG. 17C, BL1 does not discharge toground through a conductive path that includes select device T1,0 andnon-volatile storage element NT1,0 in the “OFF” state, because theswitch-plate is not in contact with the NT switch when NT1,0 is in the“OFF” state, and the resistance R_(SW) is large. Sense amplifier/latchcircuit (not shown) does not detect a voltage drop and the latch is setto a logic “0” state.

FIG. 19 illustrates the operational waveforms 1800 of NRAM memory array1700 of FIG. 18 during read, write “1”, and write “0” operations forselected cells, while not disturbing unselected cells (no change tounselected cell-stored logic states). Waveforms 1800 illustrate voltagesand timings to write logic state “1” in cell C0,0, write a logic state“0” in cell C1,0, read cell C0,0, and read cell C1,0. Waveforms 1800also illustrate voltages and timings to prevent disturbing the storedlogic states (logic “1” state and logic “0” state) in partially selected(also referred to as half-selected) cells. Partially selected cells arecells in memory array 1700 that receive applied voltages because theyare connected to (share) word, bit, reference, and release lines thatare activated as part of the read or write operation to the selectedcells. Cells in memory array 1700 tolerate unlimited read and writeoperations at each memory cell location.

At the start of the write cycle, WL0 transitions from zero to V_(DD),activating select devices T0,0, T1,0, . . . Tm−1,0. Word lines WL1, WL2. . . WLn−1 are not selected and remain at zero volts. BL0 transitionsfrom V_(DD) to zero volts, connecting the switch-plate of non-volatilestorage element NT0,0 to zero volts. BL1 transitions from V_(DD) to zerovolts connecting the switch-plate of non-volatile storage element NT1,0to zero volts. BL2, BL3 . . . BLm−1 remain at V_(DD) connecting theswitch-plate of non-volatile storage elements NT2,0, NT3,0, . . .NTm−1,0 to V_(DD). REF0 transitions from V_(DD) to switching voltageV_(SW), connecting the NT switches of non-volatile storage elementsNT0,0, NT0,1, . . . NT0,n−2, NT0,n−1 to V_(SW). REF1 transitions fromV_(DD) to zero volts, connecting the NT switches of non-volatile storageelements NT1,0, NT1,1 . . . NT1,n−2,NT1,n−1 to zero volts. REF2, REF3, .. . REFm−1 remain at V_(DD), connecting the NT switches of non-volatilestorage elements NT3,0 to NTm−1,n−1 to V_(DD). REL0 transitions fromV_(DD) to switching voltage V_(SW), connecting release-plates ofnon-volatile storage elements NT0,0, NT1,0, . . . NTm−1,0 to V_(SW).RL1, RL2 . . . RLn−1 remain at V_(DD), connecting release-plates ofnon-volatile storage elements NT0,1 to NTn−1,n−1 to V_(DD).

NT0,0 may be in “ON” (“1” state) or “OFF” (“0” state) state at the startof the write cycle. It will be in “ON” state at the end of the writecycle. If NT0,0 in cell C0,0 is “OFF” (“0” state) it will switch to “ON”(“1” state) since the voltage difference between NT switch andrelease-plate is zero, and the voltage difference between NT switch andswitch-plate is V_(SW). If NT0,0 in cell C0,0 is in the “ON” (“1”state), it will remain in the “ON” (“1”) state. NT1,0 may be in “ON”(“1” state) or “OFF” (“0” state) state at the start of the write cycle.It will be in “OFF” state at the end of the write cycle. If NT1,0 incell C1,0 is “ON” (“1” state) it will switch to “OFF” (“0” state) sincethe voltage difference between NT switch and switch-plate is zero, andthe voltage difference between NT switch and release-plate is V_(SW). IfNT1,0 in cell C1,0 is “OFF” (“0” state), it will remain “OFF” (“0”state). If for example, V_(SW)=3.0 volts, V_(DD)=1.5 volts, and NTswitch threshold voltage range is V_(NT-TH)=1.7 to 2.8 volts, then forNT0,0 and NT1,0 a difference voltage V_(SW)>V_(NT-TH) ensuring writestates of “ON” (“1” state) for NT0,0 and “OFF” (“0” state) for NT1,0.

Cells C0,0 and C1,0 have been selected for the write operation. Allother cells have not been selected, and information in these other cellsmust remain unchanged (undisturbed). Since in an array structure somecells other than selected cells C0,0 and C1,0 in array 1700 willexperience partial selection voltages, often referred to as half-selectvoltages, it is necessary that half-select voltages applied tonon-volatile storage element terminals be sufficiently low (belownanotube activation threshold V_(NT-TH)) to avoid disturbing storedinformation. For storage cells in the “ON” state, it is also necessaryto avoid parasitic current flow (there cannot be parasitic currents forcells in the “OFF” state because the NT switch is not in electricalcontact with switch-plate or release-plate). Potential half-selectdisturb along activated array lines WL0 and RL0 includes cells C3,0 toCm−1,0 because WL0 and RL0 have been activated. Storage elements NT3,0to NTm−1,0 will have BL2 to BLm−1 electrically connected to thecorresponding storage element switch-plate by select devices T3,0 toTm−1,0. All release-plates in these storage elements are at writevoltage V_(SW). To prevent undesired switching of NT switches, REF2 toREFm−1 reference lines are set at voltage V_(DD). BL2 to BLm−1 voltagesare set to V_(DD) to prevent parasitic currents. The information instorage elements NT2,0 to NTm−1,0 in cells C2,0 to Cm−1,0 is notdisturbed and there is no parasitic current. For those cells in the“OFF” state, there can be no parasitic currents (no current path), andno disturb because the voltage differences favor the “OFF” state. Forthose cells in the “ON” state, there is no parasitic current because thevoltage difference between switch-plates (at V_(DD)) and NT switches (atV_(DD)) is zero. Also, for those cells in the “ON” state, there is nodisturb because the voltage difference between corresponding NT switchesand release-plate is V_(SW)−V_(DD)=1.5 volts, when V_(SW) =3.0 volts andV_(DD)=1.5 volts. Since this voltage difference of 1.5 volts is lessthan the minimum nanotube threshold voltage V_(NT-TH) of 1.7 volts, noswitching takes place.

Potential half-select disturb along activated array lines REF0 and BL0includes cells C0,1 to C0, n−1 because REF0 and BL0 have been activated.Storage elements NT0,1 to NT0, n−1 all have corresponding NT switchesconnected to switching voltage V_(SW). To prevent undesired switching ofNT switches, RL1 to RLn−1 are set at voltage V_(DD). WL1 to WL n−1 areset at zero volts, therefore select devices T0,1 to T0,n−1 are open, andswitch-plates (all are connected to select device source diffusions) arenot connected to bit line BL0. All switch-plates are in contact with acorresponding NT switch for storage cells in the “ON” state, and allswitch plates are only connected to corresponding “floating” sourcediffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT0,1 toNT0,n−1 in cells C0,1 to C0,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at voltage V_(SW). There is a voltage difference ofV_(W)−V_(DD) between corresponding NT switch and release-plate. ForV_(SW)=3.0 volts and V_(DD)=1.5 volts, the voltage difference of 1.5volts is below the minimum V_(NT-TH) =1.7 volts for switching. For cellsin the “OFF” state, the voltage difference between corresponding NTswitch and switch-plate ranges from V_(SW) to V_(SW)-0.6 volts. Thevoltage difference between corresponding NT switch and switch-plate maybe up to 3.0 volts, which exceeds the V_(NT-TH) voltage, and woulddisturb “OFF” cells by switching them to the “ON” state. However, thereis also a voltage difference between corresponding NT switch andrelease-plate of V_(SW)−V_(DD) of 1.5 volts with an electrostatic forcein the opposite direction that prevents the disturb of storage cells inthe “OFF” state. Also very important is that NT 1140 is in position1140″ in contact with the storage-plate dielectric, a short distancefrom the storage plate, thus maximizing the electric field that opposescell disturb. Switch-plate 1140 is far from the NT 1140 switch greatlyreducing the electric field that promotes disturb. In addition, the vander Waals force also must be overcome to disturb the cell.

Potential half-select disturb along activated array lines REF1 and BL1includes cells C1,1 to C1, n−1 because REF1 and BL1 have been activated.Storage elements NT1,1 to NT1, n−1 all have corresponding NT switchesconnected to zero volts. To prevent undesired switching of NT switches,RL1 to RLn−1 are set at voltage V_(DD). WL1 to WL n−1 are set at zerovolts, therefore select devices T1,1 to T1,n−1 are open, andswitch-plates (all are connected to select device source diffusions) arenot connected to bit line BL1. All switch-plates are in contact with acorresponding NT switch for storage cells in the “ON” state, and allswitch plates are only connected to corresponding “floating” sourcediffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT1,1 toNT1,n−1 in cells C1,1 to C1,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at zero volts. There is a voltage difference of V_(DD)between corresponding NT switch and release-plate. For V_(DD)=1.5 volts,the voltage difference of 1.5 volts is below the minimum V_(NT-TH) =1.7volts for switching. For cells in the “OFF” state, the voltage of theswitch-plate ranges zero to 0.6 volts. The voltage difference betweencorresponding NT switch and switch-plate may be up to 0.6 volts. Thereis also a voltage difference between corresponding NT switch andrelease-plate of V_(DD)=1.5 volts. V_(DD) is less than the minimumV_(NT-TH) of 1.7 volts the “OFF” state remains unchanged.

For all remaining memory array 1700 cells, cells C2,1 to Cm−1,n−1, thereis no electrical connection between NT2,1 to NTm−1,n−1 switch-platesconnected to corresponding select device source and corresponding bitlines BL2 to BLm−1 because WL1 to WLn−1 are at zero volts, and selectdevices T2,1 to Tm−1,n−1 are open. Reference line voltages for REF2 toREFm−1 are set at V_(DD) and release line voltages for RL1 to RLn−1 areset at V_(DD). Therefore, all NT switches are at V_(DD) and allcorresponding release-plates are at V_(DD), and the voltage differencebetween corresponding NT switches and release-plates is zero. Forstorage cells in the “ON” state, NT switches are in contact withcorresponding switch-plates and the voltage difference is zero. Forstorage cells in the “OFF” state, switch plate voltages are zero to amaximum of 0.6 volts. The maximum voltage difference between NT switchesand corresponding switch-plates is V_(DD)=1.5 volts, which is below theV_(NT-TH) voltage minimum voltage of 1.7 volts. The “ON” and “OFF”states remain undisturbed.

Non-volatile NT-on-source NRAM memory array 1700 with bit lines parallelto reference lines is shown in FIG. 18 contains 2^(N)×2^(M) bits, is asubset of non-volatile NRAM memory system 1810 illustrated as memoryarray 1815 in FIG. 20A. NRAM memory system 1810 may be configured tooperate like an industry standard asynchronous SRAM or synchronous SRAMbecause nanotube non-volatile storage cells 1000 shown in FIG. 17A, inmemory array 1700, may be read in a non-destructive readout (NDRO) modeand therefore do not require a write-back operation after reading, andalso may be written (programmed) at CMOS voltage levels (5, 3.3, and 2.5volts, for example) and at nanosecond and sub-nanosecond switchingspeeds. NRAM read and write times, and cycle times, are determined byarray line capacitance, and are not limited by nanotube switching speed.Accordingly, NRAM memory system 1810 may be designed with industrystandard SRAM timings such as chip-enable, write-enable, output-enable,etc., or may introduce new timings, for example. Non-volatile NRAMmemory system 1810 may be designed to introduce advantageous enhancedmodes such as a sleep mode with zero current (zero power-power supplyset to zero volts), information preservation when power is shut off orlost, enabling rapid system recovery and system startup, for example.NRAM memory system 1810 circuits are designed to provide the memoryarray 1700 waveforms 1800 shown in FIG. 19.

NRAM memory system 1810 accepts timing inputs 1812, accepts addressinputs 1825, and accepts data 1867 from a computer, or provides data1867 to a computer using a bidirectional bus sharing input/output (I/O)terminals. Alternatively, inputs and outputs may use separate (unshared)terminals (not shown). Address input (I/P) buffer 1830 receives addresslocations (bits) from a computer system, for example, and latches theaddresses. Address I/P buffer 1830 provides word address bits to worddecoder 1840 via address bus 1837; address I/P buffer 1830 provides bitaddresses to bit decoder 1850 via address bus 1852; and address bustransitions provided by bus 1835 are detected by function generating,address transition detecting (ATD), timing waveform generator,controller (controller) 1820. Controller 1820 provides timing waveformson bus 1839 to word decoder 1840. Word decoder 1840 selects the wordaddress location within array 1815. Word address decoder 1840 is used todecode both word lines WL and corresponding release lines RL (there isno need for a separate RL decoder) and drives word line (WL) and releaseline (RL) select logic 1845. Controller 1820 provides function andtiming inputs on bus 1843 to WL & RL select logic 1845, resulting inNRAM memory system 1810 on-chip WL and RL waveforms for both write-one,write-zero, read-one, and read-zero operations as illustrated bywaveforms 1800′ shown in FIG. 21. FIG. 21 NRAM memory system 1810waveforms 1800′ correspond to memory array 1700 waveforms 1800 shown inFIG. 19.

Bit address decoder 1850 is used to decode both bit lines BL andcorresponding reference lines REF (there is no need for a separate REFdecoder) and drive bit line (BL) and reference (REF) select logic 1855via bus 1856. Controller 1820 provides timing waveforms on bus 1854 tobit decoder 1850. Controller 1820 also provides function and timinginputs on bus 1857 to BL & REF select logic 1855. BL & REF select logic1855 uses inputs from bus 1856 and bus 1857 to generate data multiplexerselect bits on bus 1859. The output of BL and REF select logic 1855 onbus 1859 is used to select control data multiplexers using combined datamultiplexers & sense amplifiers/latches (MUXs & SAs) 1860. Controller1820 provides function and timing inputs on bus 1862 to MUXs & SAs 1860,resulting in NRAM memory system 1810 on-chip BL and REF waveforms forboth write-one, write-zero, read-one, and read-zero operations asillustrated by waveforms 1800′ corresponding to memory array 1700waveforms 1800 shown in FIG. 19. MUXs & SAs 1860 are used to write dataprovided by read/write buffer 1865 via bus 1864 in array 1815, and toread data from array 1815 and provide the data to read/write buffer 1865via bus 1864 as illustrated in waveforms 1800′.

Sense amplifier/latch 1900 is illustrated in FIG. 20B. Flip flop 1910,comprising two back-to-back inverters is used to amplify and latch datainputs from array 1815 or from read/write buffer 1865. Transistor 1920connects flip flop 1910 to ground when activated by a positive voltagesupplied by control voltage V_(TIMING) 1980, which is provided bycontroller 1820. Gating transistor 1930 connects a bit line BL to node1965 of flip flop 1910 when activated by a positive voltage. Gatingtransistor 1940 connects reference voltage V_(REF) to flip flop node1975 when activated by a positive voltage. Transistor 1960 connectsvoltage V_(DD) to flip flop 1910 node 1965, transistor 1970 connectsvoltage V_(DD) to flip flop 1910 node 1975, and transistor 1950 ensuresthat small voltage differences are eliminated when transistors 1960 and1970 are activated. Transistors 1950, 1960, and 1970 are activated(turned on) when gate voltage is low (zero, for example).

In operation, V_(TIMING) voltage is at zero volts when sense amplifier1900 is not selected. NFET transistors 1920, 1930, and 1940 are in the“OFF” (non-conducting) state, because gate voltages are at zero volts.PFET transistors 1950, 1960, and 1970 are in the “ON” (conducting) statebecause gate voltages are at zero volts. V_(DD) may be 5, 3.3, or 2.5volts, for example, relative to ground. Flip flop 1910 nodes 1965 and1975 are at V_(DD). If sense amplifier/latch 1900 is selected,V_(TIMING) transitions to V_(DD), NFET transistors 1920, 1930, and 1940turn “ON”, PFET transistors 1950, 1960, and 1970 are turned “OFF”, andflip flop 1910 is connected to bit line BL and reference voltageV_(REF). V_(REF) is connected to V_(DD) in this example. As illustratedby waveforms BL0 and BL1 of waveforms 1800′, bit line BL is pre-chargedprior to activating a corresponding word line (WL0 in this example). Ifcell 1000 of memory array 1700 (memory system array 1815) stores a “1”,then bit line BL in FIG. 20B corresponds to BL0 in FIG. 21, BL isdischarged by cell 1000, voltage droops below V_(DD), and senseamplifier/latch 1900 detects a “1” state. If cell 1000 of memory array1700 (memory system array 1815) stores a “0”, then bit line BL in FIG.20B corresponds to BL1 in FIG. 21, BL is not discharged by cell 1000,voltage does not droop below V_(DD), and sense amplifier/latch 1900detect a “0” state. The time from sense amplifier select to signaldetection by sense amplifier/latch 1900 is referred to as signaldevelopment time. Sense amplifier/latch 1900 typically requires 100 to200 mV relative to V_(REF) in order to switch. It should be noted thatcell 1000 requires a nanotube “OFF” resistance to “ON” resistance ratioof greater than about 10 to 1 for successful operation. A typical bitline BL has a capacitance value of 250 fF, for example. A typicalnanotube storage device (switch) or dimensions 0.2 by 0.2 um typicallyhas 8 nanotube filaments across the suspended region, for example, asillustrated further below. For a combined contact and switch resistanceof 50,000 Ohms per filament, as illustrated further below, the nanotube“ON” resistance of cell 1000 is 6,250 Ohms. For a bit line of 250 fF,the time constant RC=1.6 ns. The sense amplifier signal development timeis less than RC, and for this example, is between 1 and 1.5 nanoseconds.

Non-volatile NRAM memory system 1810 operation may be designed for highspeed cache operation at 5 ns or less access and cycle time, forexample. Non-volatile NRAM memory system 1810 may be designed for lowpower operation at 60 or 70 ns access and cycle time operation, forexample. For low power operation, address I/P buffer 1830 operationrequires 8 ns; controller 1820 operation requires 16 ns; bit decoder1850 operation plus BL & select logic 1855 plus MUXs & SA 1860 operationrequires 12 ns (word decoder 1840 operation plus WL & RL select logic1845 ns require less than 12 ns); array 1815 delay is 8 ns; sensing 1900operation requires 8 ns; and read/write buffer 1865 requires 12 ns, forexample. The access time and cycle time of non-volatile NRAM memorysystem 1810 is 64 ns. The access time and cycle time may be equalbecause the NDRO mode of operation of nanotube storage devices(switches) does not require a write-back operation after access (read).

Method of Making Field Effect Device with Controllable Source andNT-On-Source Memory System and Circuits with Parallel Bit and ReferenceArray Lines, and Parallel Word and Release Array Lines

Non-volatile field effect devices (FEDs) 20, 40, 60, and 80 withcontrollable sources may be used as cells and interconnected into arraysto form non-volatile nanotube random access memory (NRAM) systems. Thememory cells contain one select device (transistor) T and onenon-volatile nanotube storage element NT (1T/1NT) cells). By way ofexample, FED4 80 (FIG. 2D) devices are fabricated and interconnected toform a non-volatile NRAM memory cell that is also referred to as aNT-on-Source memory cell with parallel bit and reference array lines,and parallel word and release array lines.

FIG. 22 describes the basic method 3000 of manufacturing preferredembodiments of the invention. The following paragraphs describe suchmethod in specific relation to an NRAM NT-on-source structure. However,this method is sufficient to cover the manufacturer of all the preferredfield effect devices described.

In general, preferred methods first form 3002 a field effect devicesimilar to a MOSFET, having drain, source, and gate nodes. Such astructure may be created with known techniques and thus is not describedhere. Such a structure defines a base layer on which a nanotube controlstructure may be created.

Once the semiconductor structure is defined in the substrate, preferredmethods then 3004 a lower carbon nanotube intermediate control structurehaving nanotube electromechanical, non-volatile switches. FIGS. 24A,24B, 24C, 24D, and 24E depict five exemplary structures that areNT-on-source devices.

FIG. 24A illustrates a cross section of intermediate structure 3103.Intermediate structure 3103 includes an intermediate base structure3102′ (formed in step 3002) with an intermediate nanotube controlstructure on top. The base structure 3102′ includes N+ drain regions3126, and N+ doped source regions 3124 in p-type monocrystalline siliconsubstrate 3128. Polysilicon gates 3120 control the channel regionbetween drain and source. Shared conductive stud 3118 contacts drain3126 in contact region 3123. Contact studs 3122, one for each nanotubestructure, physically and electrically connect the base structure 3102′to the NT control structure. Specifically stud 3122 connects toelectrode 3106 at contact region 3101, and to source 3124 at contactingregion 3121.

The NT structure is disposed over the planar oxide region 3116. The NTstructure includes electrode (switch-plate) 3106, a first sacrificialgap layer 3108 on electrode 3106, a nanotube fabric (porous) element3114 deposited on first sacrificial gap layer 3108, a nanotubeconductive contact layer 3117 providing mechanical support (nanotubefabric element pinning between layers 3108 and 3117) and electricalcontact, and conductive layer 3119 deposited on nanotube contact layer3117 for enhanced electrical conductivity, and to act as an etch maskfor layer 3117. At this point, lower carbon nanotube intermediatecontrol structures 3109 and 3109′, illustrated in FIGS. 25E-25G andFIGS. 25EE-25GG, respectively, have been formed. The material ofelectrode 3106 may be tungsten, aluminum, copper, gold, nickel, chrome,platinum, palladium, or combinations of conductors such aschrome-copper-gold. Electrode 3106 thickness is in the range of 25 to200 nm. The material of electrode 3106 is selected for reliablenear-ohmic low contact resistance R_(SW) between electrode 3106 andnanotube fabric layer 3114, and cyclability (number or contact-releasecycles) after gap formation (shown below), when switching fabric layer3114 switches in-out-of contact with electrode 3106 during productoperation. R_(SW) may be in the range of 1,000 to 100,000 Ohms percontacted fiber in fabric layer 3114. For a fabric layer 3114 with 10contacted fibers, for example, contact resistance R_(SW) may be in therange of 100 to 10,000 Ohms, for example.

Once the lower carbon nanotube intermediate control structures 3109 and3109′ are formed, then fabricate 3006 an upper carbon nanotube electrodeintermediate structure. Opening 3136 defines the dimensions of thenanotube fabric element 3114 to be suspended, including that portion offirst sacrificial gap layer 3108 to be removed. The material from whichnanotube fabric conductive contact layer 3117 is chosen depends upondesired electrical contact 3127 resistance R_(C) properties, such as anear-ohmic low resistance contact between conductor 3117 and nanotubefabric element 3114. Combined nanotube fabric element 3114 below opening3136, and combined electrical conductors 3117 and 3119 in adjacentmechanical and electrical contact region 3127, form a low resistanceR_(C) local NT to conductor contact 3127 region. R_(C) may be in therange of 1,000 to 100,000 Ohms per contacted fiber in fabric layer 3114.For a fabric layer 3114 with 10 contacted fibers, for example, contactresistance R_(C) may be in the range of 100 to 10,000 Ohms, for example.This local conductor region surrounds opening 3136 and may be referredto as a picture frame region, with nanotube contact layer 3114 elementpinned between conductor 3117 and a portion of first sacrificial gaplayer 3108 that remains in the final product structure. In a pictureframe region as illustrated in FIG. 24A, each end of a fiber iselectrically connected to the picture frame, such that the resistanceconnection to the switch is R_(C)/2. Combined electrical conductors 3117and 3119 form a low resistance interconnect NT structure.

At this stage of the method, electrode (release-plate) 3205 is formed. Aconformal second sacrificial gap layer 3201 deposited on patternedconductor 3119, and electrode 3205 is deposited on second sacrificialgap layer 3201, planarized, and layers of material for electrode 3205and 3201 are patterned. The thickness of first sacrificial gap layer3108 situated between nanotube fabric layer 3114 and electrode 3106 istypically in the range of 5 to 20 nm. The film thickness of secondsacrificial gap layer 3201 situated between nanotube fabric layer 3114and electrode 3205 is typically in the range of 5 to 40 nm. Filmthicknesses are in the range of 100 to 200 nm, typical of 130 nm minimumdimension (half-period) semiconductor technology. Nanotube fabric layer3114 film thickness is on the order of 0.5-5 nm, for example. Nanotubefabric layer 3114 minimum dimension is typically 130 nm. As will beexplained below, once the sacrificial materials are removed, thesuspended length of the nanotube fabric element 3114 in the NT deviceregion is on the order of 100 to 150 nm, but may be scaled to asuspended length of 20 to 40 nm, for example. The channel length betweendrain 3126 and source 3124 can be on the order of 100 to 130 nm asdefined by polysilicon gate 3120, but may be scaled to the 30 to 90 nmrange, for example. The integrated semiconductor structure defines asurface 3104′ on which the NT structure is formed.

FIG. 24B illustrates a cross section of intermediate structure 3103′.Intermediate structure 3103′ is similar to structure 3103 of FIG. 24A,but adds additional nanotube layer element 3114 angled (non-horizontal)supports 3112 (nanotube layer contact to supports 3112 is not visible inthis cross sectional view).

FIG. 24C illustrates a cross section of intermediate structure 3107.Intermediate structure 3107 is similar to structure 3103 of FIG. 24A,but has an additional insulating layer 3203 between second sacrificialgap layer 3201 and electrode 3205. Insulating layer 3201 thickness istypically in the range of 5 to 20 nm. Structure 3107 with insulatinglayer 3203 on the underside of electrode 3205 forms a release-plate ofthe nanotube switch above nanotube fabric layer 3114 as discussedfurther below. Electrode 3106 forms a switch-plate of the nanotubeswitch below nanotube fabric layer 3114 as discussed further below.

FIG. 24D illustrates a cross section of intermediate structure 3107′.Intermediate structure 3107′ is similar to structure 3107 of FIG. 24C,but adds additional nanotube layer 3114 element angled (non-horizontal)supports 3112 (contact region is not visible in this cross sectionalview).

FIG. 24E illustrates a cross section of intermediate structure 3107X.Intermediate structure 3107X is similar to structure 3107 of FIG. 24C,except that first sacrificial layer 3108 insulator, Si₃N₄, for example,is replaced by first sacrificial layer 3108X semiconductor or conductor,silicon (Si), for example, and an insulator border region 3115, whereregion 3115 may be SiO₂ or Si₃N₄, for example. First sacrificial layer3108X dimensions correspond to the suspended region of the nanotubeswitch structure. Insulator border region 3115 is used as part of ananotube pinning structure (explained further below) under the nanotubefabric required to support nanotube 3114 when elongated duringswitching.

FIG. 24F illustrates a cross section of intermediate structure 3107″.Intermediate structure 3107″ is similar to structure 3103 of FIG. 24A,but has an additional insulating layer 3203′ between first sacrificialgap layer 3108 and electrode 3106. Insulating layer 3203′ thickness istypically in the range of 5 to 20 nm. Structure 3107″ with insulatinglayer 3203′ on the topside of electrode 3106 forms a release-plate ofthe nanotube switch below nanotube fabric 3114 as discussed furtherbelow. Electrode 3205 forms switch-plate of the nanotube switch abovenanotube fabric layer 3114 as discussed further below. In other words,the roles of bottom and top electrodes in FIGS. 24C and 24E arereversed, however, after fabrication is completed and the nanotubes arereleased (gap regions are formed), both nanotube switches exhibit thesame electrical operational characteristics. Fabrication methods used tofabricate the structures illustrated in FIGS. 24A-24D also may be usedto fabricate structure 24F, with slight modifications as discussedfurther below.

FIG. 30F illustrates the intermediate structure 3212, through completionof method act 3006. FIG. 30F shows structure 3212 much like structure3103 in FIG. 24A which has been processed to include encapsulation overthe nanotube structures in an insulator. Likewise, a structure 3103′ ofFIG. 24B could be analogously encapsulated. FIG. 30F′ illustrates theintermediate structure 3214, through completion of Step 3006. FIG. 30F′shows structure 3214 much like structure 3107 in FIG. 24C which has beenprocessed to include encapsulation over the nanotube structures in aninsulator. Likewise, a structure 3107′ of FIG. 24D could be analogouslyencapsulated. FIG. 30FX illustrates the intermediate structure 3212X,through completion of method act 3006. FIG. 30FX shows structure 3212Xmuch like structure 3212 of FIG. 30F, except that first sacrificiallayer 3108 has been replaced with first sacrificial layer 3108× andco-planar border region 3115. FIG. 30FX′ illustrates the intermediatestructure 3214X, through completion of method act 3006. FIG. 30FX′ showsstructure 3214X much like structure 3214 of FIG. 30F′, except that firstsacrificial layer 3108 has been replaced with first sacrificial layer3108X and co-planar border region 3115. At this point, upper carbonnanotube intermediate control structure 3212 and 3214 are formed. Whenencapsulated, FIG. 25E (not shown) is similar to structure 3214 of FIG.30F′, except that insulator layer 3203 between second sacrificial layer3201 and electrode 3205, but is instead between first sacrificial layer3108 and electrode 3106.

After the structure is completed through the pre-nanotube release(pre-suspend) level, preferred methods then create a gap region aboveand below the (carbon) nanotube element by etching to gap sacrificiallayers and removing the sacrificial gap layer between electrode 3205 andconductor 3119, and sacrificial gap layers in the NT switch region. Theprocess of creating such a gap region is described below in connectionwith FIGS. 27 and 27′. Briefly, fluid communication paths are formed tothe sacrificial gap material, see, e.g., opening 3207′ of FIG. 30H andopening 3208′ of FIG. 30H′. These paths are used to remove secondsacrificial gap material 3201 and a segment of first sacrificial gapmaterial 3108 of segment length defined by combined conductor 3119 and3117 opening e.g., gap region 3209A and 3108A in FIGS. 30K and 30K′ tosuspend segment 3114A of nanotube elements 3114. Alternatively, thesepaths are used to remove second sacrificial gap material 3201 and firstsacrificial gap material layer 3108X, leaving border region 3115.Afterwards the paths may be closed, see, e.g., FIG. 30J and FIG. 30J′. Asuspended portion 3114A of nanotube elements 3114 may be seen inpre-wiring level structure 3213 illustrated in FIG. 30K and pre-wiringlevel structure 3215 illustrated in FIG. 30K′.

After sacrificial material has been removed, preferred embodimentcomplete fabrication 3009 of the combined nanotube and semiconductorstructure to the external contact and passivation layers (not shown).For example, after the fluid communication openings (paths) are closed(encapsulated), connections to drain node 3126 are made, see structure3223 of FIG. 30M and structure 3225 of FIG. 30M′, prior to final wiringto terminal pads, passivation, and packaging.

FIGS. 23, 23′, 23″ each describe methods (processes) of forming thenanotube switching structures 3103, 3103′ of FIGS. 24A and 24B,respectively, and nanotube switching structures 3107, 3107′ of FIGS. 24Cand 24D, respectively. FIGS. 23, 23′, and 23″ each describe methods(processes) of forming the nanotube switching structures 3107X and 3107″of FIGS. 24E and 24F, respectively.

Referring to FIGS. 23, 23′ and 23″, preferred methods in Flow Chart 3004start with act 3010. Step 3010 presumes that an intermediate structurehas already been created, on top of which the nanotube control structureis to be formed. For example, FIGS. 24A, 24B, 24C, 24D, 24E, and 24Feach illustrate an intermediate structure 3102′ on which the controlstructure is to be formed. Structure 3102′ already has many componentsof a field effect device, including drain, source, and gate nodes. Thefirst step is to deposit a conductor layer on surface 3104 intermediatestructure 3102. By way of example, conductor layer may be tungsten,aluminum, copper, gold, nickel, chrome, platinum, palladium,polysilicon, or combinations of conductors such as chrome-copper-gold.Alternatively, conductor layer may be formed of single-layers ormulti-layers of single or multi-walled nanotube fabric withconductivities in the range of 0.1 to 100 Ohms per square as describe inincorporated patent references explained further below. Nanotube fabricmay be used in vias and wiring in any array structure. Conductorthickness may be in the range of 50 to 200 nm.

Then, preferred embodiments deposit 3012 first sacrificial gap materiallayer on top of the conductor layer. A sacrificial layer 3108′ of gapmaterial such as insulator silicon nitride (Si₃N₄) or semiconductorsilicon (Si) for example, is deposited on conductor layer 3106′, asillustrated in FIG. 25A. Sacrificial layer 3108′ may also be aconductor, such as TiW, for example. As will be explained below, thefirst sacrificial gap layer thickness controls the separation (or gap)between the nanotube fabric element (yet to be formed) and conductorlayer 3106′ in the nanotube switch region. In a preferred embodiment,this separation or gap dimension is approximately 1/10 of the suspendedlength of the nanotube element. For a nanotube switch design withsuspended length of 130 nm, the gap is therefore chosen as about 13 nm.Sacrificial layer 3108′ is deposited to a thickness of about 13 nm, forexample. Alternatively, after method act 3010, but before method act3012, insulating film layer 3203′ may be deposited as illustrated inFIG. 25A′. Insulating film layer 3203′ may be SiO₂, for example, ofthickness 5 to 20 nm, for example. Method 3004 continues with step 3012.Adding insulating layer 3203′ results in structure 3107″ aftercompletion of methods 3004, 3036, and 3006 as described further below.

Then, preferred embodiments deposit and image 3014 photoresist. Suchpatterning may be done using known techniques. This is done to define(in photoresist) the pattern for the electrode and sacrificial material,see, e.g., electrode 3106 and first sacrificial gap layer 3108 of FIGS.24A, 24B, 24C, 24D and 24F.

Alternatively, preferred embodiments step 3014 patterns layer 3108′resulting in first sacrificial layer 3108X as illustrated in FIG. 25AX,where first sacrificial layer 3108X is a conductor or semiconductor(silicon, for example), with dimensions corresponding to nanotubeswitching region suspended length L_(SUSP), see e.g., electrode 3106 andfirst sacrificial gap layer 3108X of FIG. 24E. The inventors envisionthat for certain applications, the ability to precisely controlsacrificial layer removal may be advantageous for manufacturability.Specifically, to etch layers anisotropically has advantages overisotropic etching in defining the underlying gap, e.g. gap region 3108A.

Next, preferred embodiments deposit 3015 insulating material layer 3115′such material may be SiO₂, Si₃N₄, Al₂O₃, or other insulating materials,for example, as illustrated in FIG. 25AX.

Next, preferred embodiments CMP etch then directly etch 3017 insulatinglayer 3115′ exposing first sacrificial layer 3108X, silicon, forexample, and forming coplanar insulating layer 3115″, SiO₂ or Si₃N₄, forexample, as shown in FIG. 25AX.

Then, preferred methods etch 3016 conductor layer 3106′ and sacrificialmaterial layer 3108′ to form electrode structure 3106 and sacrificialgap material layer 3108 as follows. Sacrificial layer 3108′ is etched.The photoresist layer (not shown) is removed. Etched sacrificial layer3108 is used as the mask layer for etching conductor layer 3106′.Alternatively, the photoresist layer is used to etch both sacrificialgap layer 3108′ and conductor layer 3106′, and then the photoresist isremoved (not shown). Alternatively, preferred methods etch 3016conductor layer 3106′ and insulating material 3115″ of coplanar layer3115″ and first sacrificial layer 3108X using a photoresist layer, andthen the photoresist is removed (not shown).

After the electrode and sacrificial material region are formed,preferred methods deposit 3018 a conformal sacrificial material layer.As shown in FIG. 25B, conformal sacrificial layer 3110 is deposited overthe combined control electrode 3106 and first sacrificial gap layer 3108structure. Alternatively, as shown in FIG. 25BX, conformal sacrificiallayer 3110 is deposited over the combined control electrode 3106 andcoplanar first sacrificial layer 3108X and border layer 3115. Conformallayer 3110 may be formed using a variety of insulating materials such asSiO₂, Si₃N₄, Al₂O₃, and polyimide, or conducting materials such asaluminum, copper, nickel, chromium, tungsten, and silicon, for example.In a preferred implementation, SiO₂ is selected. The SiO₂ may beconformably deposited as spin-on-glass, or using Low Pressure ChemicalVapor Deposition (LPCVD), or by other conformal deposition techniques.The thickness of the deposited SiO₂ layer depends on the thickness ofthe combined control electrode 3106 and sacrificial layer 3108 (orcombined control electrode 3106 and coplanar first sacrificial layer3108X and border layer 3115) and method of etching conformal layer 3110,and may range from 70 nm to 300 nm, for example.

After the conformal sacrificial material is deposited, a first methodschemical-mechanical-polish etch 3020 partially removes sacrificial layermaterial 3110 to top surface of first sacrificial gap layer 3108,leaving planar support structure 3110′ as illustrated in FIG. 25C.Alternatively, first methods CMP etch 3020 partially removes sacrificiallayer material 3110 to top surface of combined control electrode 3106and coplanar first sacrificial layer 3108X and border layer 3115,leaving support structure 3110X′ as illustrated in FIG. 25CX. CMP etchapplied to surface of sacrificial layer 3108 may result in surfacedamage to first sacrificial gap layer 3108. CMP etch applied to combinedcontrol electrode 3106 and coplanar first sacrificial layer 3108X andborder layer 3115 may result in damage to first sacrificial layer 3108X.Alternatively, a second methods 3020′ CMP etch partially removessacrificial layer 3110, then directional etch removes additionalsacrificial layer 3110 exposing top surface of first sacrificial gaplayer 3108, leaving planar support structure 3110′, or alternativelyexposing top surface of first sacrificial layer 3108X, leaving supportstructure 3110×′. Two-step etch 3020′ method may be simplified to asingle-step method without exposing the surface of first sacrificial gaplayer 3108, or first sacrificial gap layer 3108X, to a CMP etch process.Alternatively, third etch 3020″ directly etches sacrificial layer 3110material exposing top surface of first sacrificial layer 3108, leavingsloped support structure 3112 as illustrated in FIG. 25CC. Conformalsacrificial layer 3110 may be etched using sputter etching, reactive ionbeam (RIE) etching, or other techniques.

Next, preferred methods form 3022 a porous layer of matted carbonnanotubes. This may be done with spin-on technique or other appropriatetechnique as described in U.S. Pat. Nos. 6,643,165 and 6,574,130 andU.S. patent application Ser. Nos. 09/915,093, 10/033,323, 10/033,032,10/128,118, 10/128,117, 10/341,005, 10/341,055, 10/341,054, 10/341,130,60/446,783 and 60/446,786, the contents of which are hereby incorporatedby reference in their entireties (hereinafter and hereinbefore, the“incorporated patent references”). Under preferred embodiments, thecarbon nanotube layer has a thickness of approximately 0.5-5 nm fordevices using single-walled nanotubes and 5-20 nm and greater fordevices using multi-walled nanotubes.

Then, preferred methods deposit 3023 a first conductor material layer3117′ as shown in FIG. 25D and FIG. 25DX. The material of conductorlayer 3117′ may be tungsten, aluminum, copper, gold, nickel, chrome,platinum, palladium, or combinations of conductors such aschrome-copper-gold. Conductor layer 3117′ thickness is in the range of25 to 100 nm. The material of conductor layer 3117′ is selected forreliable low contact resistance R_(C) between conductor layer 3117′ andnanotube fabric layer 3114′.

Next, preferred methods deposit 3025 a second conductor material layer3119′ as shown in FIG. 25D and FIG. 25DX. The material of conductorlayer 3119′ may be tungsten, aluminum, copper, gold, nickel, chrome,platinum, palladium, or combinations of conductors such aschrome-copper-gold. Conductor layer 3119′ thickness is in the range of50 to 200 nm. The material of conductor layer 3119′ is selected for goodconductivity.

Photoresist is then deposited and imaged in act 3027 on second conductormaterial layer 3119′.

Next, preferred methods 3029 etches second conductor layer 3119′ usingappropriate known etch techniques to form electrical conductor 3119 asshown in figures 25E, 25F, 25EX, and 25FX.

Next, preferred methods 3031 etches first electrical conductor 3117using second conductor 3119 as a masking layer using known etchtechniques to form electrical conductor 3117. Combined electricalconductors 3117 and 3119 are shown in figures 25E, 25F, 25EX, and 25FX.

Next, preferred methods 3035 etches the carbon nanotube fabric layer3114′ by using appropriate techniques as described in the incorporatedpatent applications, with combined electrical conductors 3117 and 3119acting as a masking layer. Combined electrical conductors 3117 and 3119,and patterned nanotube fabric layer 3114 are shown in FIGS. 25E, 25F,25EX, 25FX, and 25G.

Under certain embodiments, photoresist is deposited 3027 and used todefine an image of electrical conductor 3119, electrical conductor 3117,and nanotube fabric layer 3114.

FIG. 25G shows a plan view of intermediate structure 3109 andintermediate structure 3109X. FIGS. 25E and 25EX show cross sectionalviews of intermediate structure 3109 and 3109X, respectively, taken atAA-AA′ of FIG. 25G, and FIGS. 25F and 25FX show cross sectional views ofintermediate structures 3109 and 3109X, respectively, taken at BB-BB′ ofFIG. 25G. Dimensions L_(SUSP) and L′_(SUSP) indicate orthogonaldimensions of first sacrificial layer 3108X and are typically atsub-minimum or minimum lithographic dimensions. Dimensions L and L′indicate orthogonal dimensions of electrode 3106. L and L′ and aretypically at or greater than the minimum lithographic dimensions allowedfor a technology. Intermediate structure 3109 corresponds to a portionof FIGS. 24A and 24C in which electrode 3106, first sacrificial gaplayer 3108 and combined electrical conductors 3117 and 3119 were formedusing a planar support structure 3110′, but prior to the formation ofopening 3136. Intermediate structures 3109 and 3109X were formed usingmethods as indicated in flow chart 3004 shown in FIGS. 23, 23′, and 23″,the steps used were acts 3010 through 3018, next, acts 3020 or 3020′ todefine the planar support structure 3110′ and 3110X′, next, acts 3022through 3035 to complete substructures 3109 and 3109X.

Referring to method 3004 shown in FIGS. 23, 23′, and 23″, a preferredmethod of forming another intermediate structure 3109′ executes first,methods 3010 through 3018, next, method 3020″ to define the slopedsupport structure 3112, next, methods 3022 through 3035 to completesubstructure 3109.

FIG. 25GG shows a plan view of intermediate structure 3109′. FIG. 25EEshows a cross sectional view of intermediate structure 3109′ taken atAA-AA′ of FIG. 25GG, and FIG. 25FF shows a cross sectional view ofintermediate structure 3109′ taken at BB-BB′ of FIG. 25GG. Dimensions Land L′ indicate orthogonal dimensions of electrode 3106. L and L′ aretypically at or greater than the minimum lithographic dimensions allowedfor a technology. Intermediate structure 3109′ corresponds to a portionof FIGS. 24B and 24D in which electrode 3106, first sacrificial gaplayer 3114, and combined electrical conductors 3117 and 3119 were formedusing a sloped support structure 3112, but prior to the formation ofopening 3136.

When the suspended portion (structure not yet illustrated) of carbonnanotube fabric layer 3114 shown schematically in FIG. 14 (position250′) and FIG. 17B (position 1140′) storing logic state “1” (the samecomments apply for a stored logic “0” state), carbon nanotube fibers inthe nanotube fabric layer 3114 are elongated and under strain (tension).The ends of carbon nanotube fibers in the nanotube fabric layer 3114that are supported (clamped, pinned) at the perimeter of the suspendedregion, apply a restoring force. The electrical and mechanical contact,support (clamping, pinning) region is illustrated by contact 3127 inFIGS. 24A-24F, with additional support in oxide layers beyond contactregion 3127. Contacts 3127 in structures 3103 and 3107 and on adjacentsurfaces of planar support structure 3110′ shown in FIGS. 24A, 24C, 24E,and 24F illustrated in corresponding FIGS. 25F and 25FX, are sufficientto provide the necessary restoring force without carbon nanotube fiberslippage. Layer 3314 is thus pinned between 3117 and 3110′ in region3127. Contacts 3127 in structures 3103′ and 3107′ and on adjacent slopedsupport surfaces 3112 illustrated in FIGS. 24B and 24D, with slopedsupport surface 3112 overlap illustrated in corresponding FIG. 25FF, maytolerate still greater restoring forces without carbon nanotube fiberslippage.

All preferred structures may be fabricated using lithographic minimumdimensions and greater than minimum lithographic dimensions for aselected generation of technology. Selective introduction of sub-minimumlithographic dimensions may be used to realize smaller cell size, lowercarbon nanotube switching (threshold) voltages with tighterdistributions through scaling (reducing) the carbon nanotube structuredimensions (combination of shorter suspended length and gap spacings),faster nanotube switching, and lower power operation. Carbon nanotubesfibers of 130 nm suspended length and 13 nm gaps typically switch inless than 350 ps. Selective introduction of sub-minimum lithographicdimensions may be used to form smaller fluid communication pipes used toremove sacrificial material, facilitating covering (sealing) theopenings prior to deposition of the conductive wiring layers.

Sub-minimum lithographic dimensions may be introduced on any planarsurface at any step in the process. Flow chart 3036 illustrated in FIG.26 may be used to generate shapes with sub-minimum dimensions. Shapeshaving two opposite sides of sub-minimum dimension, and two orthogonalsides having minimum or greater than minimum dimension may be formedusing well known sidewall spacer technology. Sidewall periodicity is atminimum or greater than minimum dimensions. Shapes having two oppositesides of sub-minimum dimensions, and two orthogonal sides also havingsub-minimum dimensions may be formed using the intersection of twosub-minimum dimension sidewall spacers as described in U.S. Pat. Nos.5,920,101 and 5,834,818. Sidewall periodicity is at minimum or greaterthan minimum dimensions in both orthogonal directions.

Referring to FIG. 26, preferred methods flow chart 3036 start withmethods step 3042. Methods step 3042 presumes that an intermediate basestructure has already been created with a planar surface. Anintermediate base structure 3102″ may include semiconductor and carbonnanotube structure elements, and may be at any step in a process thathas a planar surface. The preferred methods first step deposits 3042sacrificial layer 3131′ on intermediate structure 3102″, having surface3104″, as illustrated in FIG. 29A. Sacrificial layer 3131′ may be photoresist, an insulator such as Si₃N₄, a semiconductor, a conductor, andmay be in the thickness range of 50 to 300 nm. Sacrificial layer 3131′is patterned to minimum or greater-than-minimum dimensions usingphotoresist (not shown).

Then, preferred embodiments form 3044 sub-lithographic sidewall spacerselectively etchable over sacrificial layer. Deposit a conformal layerof an insulator, or a conductor such as tungsten, for example, onpatterned sacrificial layer of insulator Si₃N₄, for example. Tungstenthickness is selected to achieve a desired sidewall spacing dimension.For a technology of 130 nm minimum dimension, for example, a tungstenthickness is chosen that results in a sidewall lateral dimension in therange of 50 to 100 nm, for example. After deposition, the combinedtungsten and Si₃N₄ layer is planarized, forming the sidewall spacerstructure 3133 on the sidewalls of sacrificial layer 3131 illustrated inFIG. 29B.

Next, preferred methods 3046 selectively etch sacrificial layer, leavingsub-minimum tungsten spacers on planarized surface. Sub-minimum tungstenspacer structure 3133 of width in the range of 50 to 100 nm, forexample, are shown in FIG. 29C. Alternatively, a second methods 3058forms a second sidewall spacer structure above and orthogonal tosidewall spacer structure 3133 as described in U.S. Pat. Nos. 5,920,101and 5,834,818. For a technology of 130 nm minimum dimension, forexample, a tungsten thickness is chosen that results in a shape oflateral dimension in the range of 50 to 100 nm in one dimension, and ashape of lateral dimension in the range of 50 to 100 nm in an orthogonaldimension (not shown).

Then, preferred methods deposit 3048 a sacrificial layer 3130 andplanarize. The sacrificial layer 3130 may be an insulator layer, or aphotoresist layer, for example. Planarization exposes the spacermaterial.

Next, preferred method 3050 spacer material is etched leavingphotoresist openings to the underlying planar surface having thedimensions of the spacer structures. Photoresist layer openings 3134 maybe shapes with one pair of minimum (or greater than minimum) shape W1,and sub-minimum pair of opposite dimensions of W2 as illustrated in planview FIG. 29D. Photoresist layer openings 3132 may be shapes with onepair of sub-minimum opposite dimensions W2, and a second pair oforthogonal sub-minimum dimensions W3 as illustrated in plan view FIG.29E. FIG. 29F shows a cross sectional view of intermediate sacrificialstructure 3113 plan view FIG. 29D intermediate sacrificial structure3113 taken at CC-CC′ of FIG. 29D. FIG. 29F shows a cross sectional viewof intermediate sacrificial structure 3113′ plan view FIG. 29Eintermediate sacrificial structure 3113′ taken at DD-DD′ of FIG. 29E.

FIGS. 27 and 27′ each describe methods (processes) 3006 for completingthe nanotube switch (control) structures 3103 and 3107 illustrated inFIGS. 24A and 24C, respectively.

Referring to FIG. 27, preferred method preferred method acts in flowchart 3006 start with step 3230. Step 3230 presumes that a lower portioncarbon nanotube intermediate structure 3109 (FIGS. 25E, 25F, and 25G) ornanotube intermediate structure 3109X (FIGS. 25DX, 25EX, and 25FX) ofdimension L have already been created on an intermediate substratestructure 3102′. Structure 3102′ already has many components of a fieldeffect device, including drain, source, and gate nodes, and electrode3106 of structure 3109 or 3109X is electrically connected to an FETsource. The first step is to deposit and planarize an insulating layerthat may be formed using a variety of insulating materials such as SiO₂,Si₃N₄, Al₂O₃. In a preferred implementation, SiO₂ is selected. The SiO₂may be deposited as spin-on-glass, or using Low Pressure Chemical VaporDeposition (LPCVD), or by other deposition techniques. The thickness ofthe deposited SiO₂ layer depends on the thickness of the lower portioncarbon nanotube intermediate structure 3109, and may range from 150 nmto 300 nm, for example, as illustrated in FIG. 25D or FIG. 25E. Methodsteps described fully below with respect to FIG. 30A also apply to FIG.30AX

Then, preferred methods deposit and image 3232 photoresist. Suchpatterning may be done using known techniques to produce images in thephotoresist of minimum size L_(MIN) or greater in photoresist layer 3129shown in FIG. 30B. Alternatively, intermediate sacrificial structure3113 may be formed in lieu of photoresist layer 3129, such that openingL_(MIN) is reduced to sub-minimum dimension W2 (L_(SUB-MIN)=W2) asillustrated in FIGS. 29D and 29F. Lower portion carbon nanotubeintermediate structure 3109 may be reduced in size, such that L isreplaced by L_(MIN), and L_(MIN) is replaced by W2 (also referred to asL_(SUB-MIN)). For a 130 nm minimum feature technology, L may be reducedfrom 250 nm to 190 nm, with the opening reduced from L_(MIN) of 130 nmto W2 (L_(SUB-MIN)) of 65 nm, for example. Alternatively, intermediateartificial structure 3113′ may be formed in lieu of photoresist layer3129, such that opening L_(MIN) is reduced to sub-minimum dimension W2,and orthogonal opening dimension (not shown) is reduced to sub-minimumdimension W3, as illustrated in FIGS. 29E and 29F. If W2=W3=65 nm, and,lower portion carbon nanotube intermediate structure 3109 dimensions Land L′ are equal (FIGS. 25E and 25F), then the dimension of structure3109 may reduced from 250×250 nm to 190×190 nm, with an opening reducedfrom 130×130 nm, to 65×65 nm, for example.

Then, preferred methods etch 3234 holes in second conductor layer 3119to the top of conductor 3117. This etch can be done directly throughconductor 3119 using RIE directional etch, for example, transferring theminimum or sub-minimum dimension of opening 3136 into conductor 3119 asminimum or sub-minimum opening 3151 as illustrated in FIG. 30C.Conductor 3117 is used an etch stop for the RIE because RIE may destroycarbon nanotube fibers in carbon nanotube layer 3114.

Next, preferred methods etch 3235 holes in first conductor layer 3117 tothe carbon nanotube layer 3114. This etch can be done directly throughconductor 3117, transferring the minimum or sub-minimum dimension ofopening 3151 into opening 3153 in conductor 3117 as illustrated in FIG.30D. A wet etch is used to create opening 3153 in conductor 3117. Wetetch is selected to prevent damage to nanotube layer 3114 as describedin the incorporated patent applications. Wet etch is selected not toetch first sacrificial gap layer 3108. First sacrificial gap layer 3108may consist of Si₃N₄ or Si, for example.

Then, preferred methods deposit 3236 conformal layer of secondsacrificial gap material over conductor 3119, into opening 3153′contacting sidewalls of conductors 3119 and 3117, and over the carbonnanotube element 3114 as illustrate in FIG. 30E. One example is thinconductor layer of TiW, of approximate thickness 5-50 nm. The actualthickness may vary depending upon the performance specificationsrequired for the nanotube device.

Next, preferred methods deposit 3240 conductor layer, fill the opening3153′ illustrated in FIG. 30E, and planarized. Conductor layer may becomposed of tungsten, aluminum, copper, gold, nickel, chrome, platinum,palladium, or combinations of conductors such as chrome-copper-gold, ofthickness 150 to 300 nm. Alternatively, preferred methods deposit 3238of a conformal insulator layer 3203, layer 3202 may be selected frommaterials such as SiO₂, Al₂O₃, or other suitable material with etchproperties selective to Si₃N₄ or Si, for example. SiO₂ is preferred withapproximate thickness 5-50 nm as illustrated in FIG. 30E′. Then,preferred methods deposit 3240 conductor layer for electrode 3205 oninsulator layer, fill opening 3153. The actual thickness may varydepending upon the performance specifications required for the nanotubedevice.”

Then, preferred methods 3242 pattern conductor layer using photoresist.Next, pattern second sacrificial gap layer is patterned using thephotoresist layer as a mask, or conductor layer as a mask.Alternatively, preferred methods 3244 pattern conductor layer usingphotoresist. Next, pattern insulator layer using the photoresist layeras a mask, or conductor layer as a mask. Then, pattern secondsacrificial gap layer is patterned using the photoresist layer as amask, or combined metal and insulator as a mask.

Then, preferred methods 3246 deposit insulating layer and planarize toform intermediate structure 3212 as illustrated in FIG. 30F. Insulator3116 overcoats electrode 3205. Second sacrificial gap layer 3201separates electrode 3205 from conductors 3119 and 3117, and carbonnanotube fabric layer 3114. Alternatively, preferred methods 3246deposit insulating layer and planarize to form intermediate structure3214 as illustrated in FIG. 30F′. Insulator 3116 overcoats electrode3205. Conformal insulator layer 3203 separates electrode 3205 and secondsacrificial gap layer 3201, and remains on the lower surface ofelectrode 3205 after the removal of second sacrificial gap layer 3201 (alater step). Second sacrificial gap layer 3201 separates electrode 3205from conductors 3119 and 3117, and carbon nanotube fabric layer 3114forming intermediate structure 3212. Alternatively, preferred methods3232 through preferred methods 3246 applied to FIG. 30AX result in thestructure 3212X shown in FIG. 30FX and structure 3214X shown in FIG.30FX′.

FIGS. 28 and 28′ describe processes for removing sacrificial layersaround the switching portion (region) of carbon nanotube fabric layer3114 so that gaps are formed around the nanotube element so that theelement may be suspended and switched in response to electrostaticforces. Each method presumes an intermediate structure such as 3212 or3214 (FIGS. 30F and 30F′, respectively) has already been formed.

FIGS. 28 and 28′ describe processes for removing sacrificial layersaround the switching portion (region) of carbon nanotube fabric layer3114 so that gaps are formed around the nanotube element so that theelement may be suspended and switched in response to electrostaticforces. Each method presumes an intermediate structure such as 3212X or3214X (FIGS. 30FX and 30FX′, respectively) has already been formed.While preferred methods are described further below with respect tostructures 3212 and 3214 (FIGS. 30F and 30F′, respectively), it isunderstood that these preferred methods may also be applied to structure3212X shown in FIG. 30FX and structure 3214×shown in FIG. 30FX′.

With reference to flow chart 3008 of FIGS. 28 and 28′ and tointermediate structures 3212 and 3214 of FIGS. 30F and 30F′,respectively, preferred methods form 3250 minimum images in photoresistmasking sacrificial layer 3130. Alternatively, intermediate sacrificialstructure 3113 may be formed in lieu of a photoresist layer, providingan opening of sub-minimum dimension W2 as illustrated in FIGS. 29D and29F.

Then, preferred methods directionally etch 3252 insulator form, viaholes and expose a top surface of a top electrode. Via holes are locatedoutside nanotube switching regions. Via hole 3207 through insulator 3116to top electrode 3205 illustrated in FIG. 30G is taken at EE-EE′ asshown in FIG. 30F. No insulating layer is present between electrode 3205and second sacrificial gap layer 3201. Alternatively, via hole 3208through insulator 3116 to top electrode 3205 illustrated in FIG. 30G′ istaken at FF-FF′ as shown in FIG. 30F′. Insulating layer 3203 is presentbetween electrode 3205 and second sacrificial gap layer 3201.

Next, preferred methods directionally etch 3254 conductor electrode totop of second sacrificial gap layer. Openings 3207′ provide fluidcommunication paths to second sacrificial layers 3201 as illustrated inFIG. 30H. Alternatively, preferred methods directionally etch 3256conductor electrode to top of insulating layer between conductorelectrode and second sacrificial gap layer. Next, methods directionallyetch 3254 insulator layer to top of second sacrificial layer. Openings3208′ provide fluid communication paths to second sacrificial gap layers3201 as illustrated in FIG. 30H′

Then, preferred methods etch (remove) 3258 second sacrificial gap layermaterial creating a gap and extending fluid communication paths to theexposed top portion (region) of first sacrificial gap layers insideopenings in conductors in contact with carbon nanotube fabric layers. Atthis point in the process a gap exists above a portion of the carbonnanotube film, which may also be referred to as a single-gap nanotubeswitch structure, and switched as described further down.

Next, preferred methods etch (remove) 3260 through porous carbonnanotube fabric layer without damaging carbon nanotube fibers by usingappropriate techniques as descried in the incorporated patentapplications, to exposed portion (region) of first sacrificial gaplayers inside openings in conductors in contact with carbon nanotubefabric layer. Portions (regions) of first sacrificial gap layers exposedto the etch are removed and carbon nanotube fibers are suspended(released) in the switching region. First sacrificial layer 3108 ispartially removed using industry standard wet etches for Si₃N₄, forexample. Alternatively, first sacrificial layer 3108X is removed usingindustry standard wet etches for a silicon layer, for example. At thispoint a gap exists above and below a portion of the carbon nanotube,which may be referred to as a dual-gap switch structure, and switched asdescribed further down. Carbon nanotube fibers in the peripheral regionoutside a switching region remain mechanically pinned and electricallyconnected, sandwiched between a conductor layer and the remaining(unetched) portion of the first sacrificial layer. A switching region isdefined by openings in conductors in contact with carbon nanotube fabriclayers. Gap regions 3209, 3209A, and 3108A for intermediate structure3213 with no insulating layer above gap 3108A are illustrated in FIGS.30I and 30K. Gap regions 3211, 3209A, and 3108A for intermediatestructure 3215 with insulating layer above gap 3108A are illustrated inFIG. 30K′. Gap regions 3209, 3209A, and 3108A for intermediate structure3215′ with insulating layer 3203′ below gap 3108A are illustrated inFIG. 30K″. Insulator 3203′ was deposited as illustrated in FIG. 25A′.

Next, preferred methods deposit 3262 insulating layer to fill (seal)openings (via holes) that provide a fluid communication path (or fluidconduit) used to release (suspend) carbon nanotube fibers. Insulatorsurface is planarized. Openings (via holes) that provide fluidcommunication paths are sealed as illustrated by sealed opening 3207″ inFIG. 30J and by sealed opening 3208″ in FIG. 30J′.

Next, preferred methods etch 3264 via holes to reach buried studs incontact with FET drain regions. Via holes are filled with a conductorand planarized. FIG. 30K illustrates structure 3213 with electrode 3205,combined metal conductors 3119 and 3117, and carbon nanotube region3114A separated by gap regions 3209A and 3108A. Stud 3118A contacts stud3118 that connects to drain 3126 through contact 3123. Structure 3213 isready for first wiring layer. FIG. 30K′ illustrates structure 3215 withcombined electrode 3205 and bottom insulator layer 3203, combined metalconductors 3119 and 3117, and carbon nanotube region 3114A separated bygap regions 3209A and 3108A. Stud 3118A contacts stud 3118 that connectsto drain 3126 through contact 3123. Structure 3215 is ready for a firstwiring layer.

FIG. 30KK illustrates the nanotube switch portion 3217 of integrateddual-gap structure 3215 of FIG. 30K′, where the suspended portion 3114Aof nanotube 3114 has been switched to the open position “OFF” state,with the elongated suspended portion 3114A′ in contact with insulator3203 on release-plate 3216, and held in the open position by van derWaals forces between insulator 3203 and carbon nanotube portion 3114A′.Switch portion 3217 corresponds to switch 90 illustrated in theschematic of FIG. 3A switched to position 90″, as illustrated in theschematic of FIG. 3C. Nanotube elongated suspended portion 3114A′ ofFIG. 30KK corresponds to nanotube elongated portion 1140″ of the memorycell schematic illustrated in FIG. 17C. FIG. 30KK′ illustrates thenanotube switch portion 3217′ of integrated dual-gap structure 3215 ofFIG. 30K′, where the suspended portion 3114A of nanotube 3114 has beenswitched to the closed position “ON” state, with the elongated suspendedportion 3114A″ in contact with switch-plate 3206, and held in the closedposition by van der Waals forces between switch-plate 3206 and carbonnanotube portion 3114A″. Switch portion 3217′ corresponds to switch 90illustrated in the schematic of FIG. 3A switched to position 90′, asillustrated in the schematic of FIG. 3B. Nanotube elongated suspendedportion 3114A″ of FIG. 30KK′ also corresponds to nanotube elongatedportion 1140′ of the memory cell schematic illustrated in FIG. 17B.

FIG. 30L illustrates a cross section of an alternate integrated nanotubestructure that uses a single gap region above the nanotube switchingregion to form integrated single-gap nanotube switching structure 3219,instead of a dual-gap nanotube structure that uses a gap region aboveand below the switching region of the nanotube. Structure 3219 isreferred to as a single-gap structure because segment 3114B of nanotube3114 only has a single gap 3209A. Dielectric layer 3108 below nanotubesegment 3114B is not removed by etching. Structure 3219 is fabricatedusing the steps as illustrated by flow chart 3008 in FIG. 28′, andcorresponds to the method of fabrication described above for fabricatingcross section of structure 3213 of FIG. 30K, except that method steps3260 are omitted, such that the first sacrificial gap layer is notremoved. Electrode 3106 shown below nanotube 3114 in dual-gap integratedstructure 3215 of FIG. 30K′ performs a switch-plate function, as doeselectrode 3205 shown above nanotube 3114 in single-gap integratedstructure 3219 of FIG. 30L. In other words, the bottom electrode 3106 ofFIG. 30K′ and the top electrode 3205 of FIG. 30L each performs aswitch-plate function. Electrode 3205 with insulating layer 3203 shownabove nanotube 3114 in dual-gap integrated structure 3215 of FIG. 30K′performs a release-plate function, as does electrode 3106 withinsulating layer 3108 shown below nanotube 3114 in single-gap integratedstructure 3219 of FIG. 30L. In other words, the insulated top electrode3205 of FIG. 30K′ and the insulated bottom electrode 3106 of FIG. 30Leach performs a release-plate function. Source 3124 is connected toelectrode 3106 as illustrated in FIG. 30K′, such that source 3124controls the voltage applied to electrode 3106, which is used aswitch-plate in structure 3215 shown in FIG. 30K′. Source 3124 controlsthe voltage of insulated electrode 3106, which is used as arelease-plate in structure 3219 shown in FIG. 30L.

FIG. 30L′ illustrates the structure 3219′ in which structure 3219 ofFIG. 30L has been modified so that source 3124 controls the voltage ofswitch-plate electrode 3205. In operation, structure 3215 of FIG. 30K′and structure 3219′ of FIG. 30L′ operate in the same way, except thatthe position of corresponding switch plates have been interchanged, suchthat the switch-plate is below the nanotube layer in structure 3215, andabove the nanotube layer in structure 3219′.

FIG. 30L″ illustrates the nanotube switch portion 3221 of integratedsingle-gap structure 3219 of FIG. 30L, and single-gap structure 3219′ ofFIG. 30L′, where the suspended portion 3114B of nanotube 3114 is in theopen position “OFF” state. In the open position, nanotube 3114 remainsin contact with insulator layer 3108, in an approximately non-elongatedstate, with van der Waals force between nanotube 3114 and insulatorlayer 3108. FIG. 30L′″ illustrates the nanotube switch portion 3221′ ofintegrated single-gap structure 3219 of FIG. 30L, and single-gapstructure 3219′ of FIG. 30L′, where the suspended portion 3114B ofnanotube 3114 has been switched to the closed position “ON” state3114B′. In the closed position, nanotube 3114 has been switched incontact with switch-plate 3205, and remains in contact electrode 3205,in an elongated state, with van der Waals force between nanotube 3114Bsegment and electrode 3205. A single-gap structure may be used in lieuof a dual-gap structure to fabricate field effect devices withcontrollable sources and memories using NT-on-Source arrays.

Continuing the fabrication process using a dual-gap nanotube structuresuch as illustrated in FIG. 30K, bit line 3138 is then deposited andpatterned; the resulting cross section 3223 is illustrated in FIG. 30M.Wiring layer 3138 contacts stud 3118A at contact region 3140 ofintermediate structure 3223. Final processing to the passivation layeris not shown. Alternatively, continuing the fabrication process using adual-gap nanotube structure such as illustrated in FIG. 30K′, bit line3138 is then deposited and patterned; the resulting cross section 3225is illustrated in FIG. 30M′. Wiring layer 3138 contacts stud 3118A atcontact region 3140 of intermediate structure 3225. Final processing tothe passivation layer is not shown.

FIG. 30M′ illustrates cross section A-A′ of array 3225 taken at A-A′ ofthe plan view of array 3225 illustrated in FIG. 30P, and shows FETdevice region 3237 in the FET length direction, nanotube switchstructure 3233, interconnections and insulators. FIG. 30N illustratescross section B-B′ of array 3225 taken at B-B′ of plan view of array3225 illustrated in FIG. 30P, and shows a release array line 3205, areference array line 3119/3117 composed of combined conductors 3119 and3117, and a word array line 3120. FIG. 30P illustrates a plan view ofarray 3225 including exemplary cell 3165 region, bit array line 3138contacting drain 3126 through contact 3140 to stud 3118A, to stud 3118,to contact 3123, and to drain 3126, (studs 3118, 3118A, and contact 3123not shown in plan view 3225). Reference array line 3119/3117 is parallelto bit line 3138, is illustrated in cross section in FIG. 30N, andcontacts a corresponding reference line segment in the picture frameregion formed by combined conductors 3117 and 3119, in contact withnanotube 3114, as shown in FIG. 30M′. Release array line 3205 isparallel to word array line 3120. Release line 3205 contacts and forms aportion of release electrode 3205 as illustrated in the nanotubeswitching region of FIG. 30M′. This nanotube switching region isillustrated as nanotube switch structure 3233 in array 3225 of FIG. 30P.In terms of minimum technology feature size, NT-on-source cell 3165 isapproximately 12 to 13 F². Nanotube-on-source array 3225 structuresillustrated in FIGS. 30M′, 30N, and 30P correspond to nanotube-on-sourcearray 1700 schematic representations illustrated in FIG. 18. Bit line3138 structures correspond to any of bit lines BL0 to BLm−1 schematicrepresentations; reference line 3119/3117 structures correspond to anyof reference lines REF0 to REFm−1 schematic representations; word line3120 structures correspond to any of word lines WL0 to WLn−1 schematicrepresentations; release line 3205 structures correspond to any ofrelease lines RL0 to RLn−1 schematic representations; source contact3140 structures correspond to any of source contacts 1720 schematicrepresentations; nanotube switch structures 3233 correspond to any ofNT0,0 to NTm−1,n−1 schematic representations; FET 3237 structurescorrespond to any of FETs T0,0 to Tm−1, n−1 schematic representations;and exemplary cell 3165 corresponds to any of cells C0,0 to cellCm−1,n−1 schematic representations.

It is desirable to enhance array 3225 illustrated in plan view FIG. 30Pby enhancing wireability, for example, or cell density, for example. Inorder to minimize the risk of shorts caused by misaligned via (vertical)connections between conductive layers, it is desirable to coat the topand sides of some selected conductors with an additional insulatinglayer that is not etched when etching the common insulator (commoninsulator SiO₂, for example) between conductive layers as illustrated bystructure 3227 in FIG. 31D. A method 3144 of coating a conductive layerwith an additional insulating layer to form insulated conductorstructure 3227 is described with respect to structures illustrated inFIGS. 31A-31D.

FIG. 31A presumes that an intermediate structure has already beencreated and insulated with insulator layer 3116, SiO₂ for example. Then,preferred methods deposit conductor layer 3139′ on insulator 3116. Byway of example, conductor layer 3139′ may be tungsten, aluminum, copper,gold, nickel, chrome, platinum, palladium, polysilicon, or combinationsof conductors such as chrome-copper-gold deposited by evaporation,sputtering, CVD, and other methods. Conductor thickness may be in therange of 50 to 200 nm.

Then, preferred methods deposit insulating layer 3143′ on top ofconductor layer 3139′ as illustrated in FIG. 31A. Insulator material maybe silicon nitride, alumina, or polyimide, for example. Insulatorthickness may be 20 to 100 nm, for example.

Then, preferred methods deposit and image photoresist using knowntechniques. This is done to define a pattern in the photoresist thatcorresponds to the electrode and insulating layer.

Then, preferred methods etch define conductor 3139 and insulating layer3143 as illustrated in FIG. 31B. The photoresist layer (not shown) isremoved.

After the conductor 3139 and insulating layer 3143 are defined,preferred methods deposit conformal insulating layer 3147 as illustratedin FIG. 31C. Insulating layer 3147 may be of the same material asinsulating layer 3143. Insulating thickness may be 20 to 100 nm, forexample.

Next, preferred methods directionally etch (reactive ion etch, forexample) insulating layer 3147, resulting in conductor 3139 havinginsulating layer 3148 on top and on the sides and forming insulatedconductor structure 3227 as illustrated in FIG. 31D. Method 3144 (orcomparable methods) of insulating a conductor as illustrated in FIGS.31A-31D may be applied to various conductive layers, such as those inmemory array 3225.

It is desirable to enhance the wireability of array 3225 illustrated inFIG. 30P by forming reference array line 3138′ on the same wiring leveland at the same time as bit line 3138. Reference array line 3138′contacts reference line segments 3119/3117 composed of combinedconductors 3119 and 3117 as illustrated further below. Line segments3119/3117 are not required to span relatively long sub-array regions andmay be optimized for contact to nanotube layer 3114.

FIG. 32A illustrates cross section A-A′ of array 3229 taken at A-A′ ofthe plan view of array 3229 illustrated in FIG. 32C, and shows FETdevice region 3237 in the FET length direction, nanotube switchstructure 3233, interconnections and insulators. FIG. 32B illustratescross section B-B′ of array 3229 taken at B-B′ of plan view of array3229 illustrated in FIG. 32C, and shows a release array line 3205 withinsulating layer 3149 corresponding to insulating layer 3148 instructure 3227 (FIG. 31D), a reference array line 3138′ in contact withconductor 3119 of combined conductors 3119 and 3117, and a word arrayline 3120. Reference array line 3138′ contacts conductor 3119 throughcontact 3155, to stud 3157, through contact 3159, to conductor 3119.Insulator 3149 is used to prevent contact between release line electrode3205 and stud 3157 in case of stud 3157 misalignment. FIG. 32Cillustrates a plan view of array 3229 including exemplary cell 3167region, with bit array line 3138 contacting drain 3126 through contact3140 to stud 3118A, to stud 3118, to contact 3123, and to drain 3126,(stud 3118A, stud 3118 and contact 3123 not shown in plan view 3229).Reference array line 3138′ is on the same array wiring layer andparallel to bit line 3138, as is illustrated in plan view of array 3229in FIG. 32C, and reference line 3138′ contacts a corresponding referenceline segment 3119, as shown in FIG. 32B. Release array line 3205 isparallel to word array line 3120. Release line 3205 contacts and forms aportion of release electrode 3205 as illustrated in the nanotubeswitching region of FIG. 32A. This nanotube switching region isillustrated as nanotube switch structure 3233 in array 3229 of FIG. 32C.In terms of minimum technology feature size, NT-on-source cell 3167 isapproximately 12 to 13 F². Nanotube-on-source array 3229 structuresillustrated in FIGS. 32A, 32B, and 32C correspond to nanotube-on-sourcearray 1700 schematic representation illustrated in FIG. 18. Bit line3138 structures correspond to any of bit lines BL0 to BLm−1 schematicrepresentations; reference line 3138′ structures correspond to any ofreference lines REF0 to REFm−1 schematic representations; word line 3120structures correspond to any of word lines WL0 to WLn−1 schematicrepresentations; release line 3205 structures correspond to any ofrelease lines RL0 to RLn−1 schematic representations; source contact3140 structures correspond to any of source contacts 1720 schematicrepresentations; nanotube switch structure 3233 correspond to any ofNT0,0 to NTm−1,n−1 schematic representations; and FET 3237 structurescorrespond to any of FET T0,0 to Tm−1, n−1 schematic representations;and exemplary cell 3167 corresponds to any of cells C0,0 to cellCm−1,n−1 schematic representations.

It is desirable to enhance the density of array 3225, illustrated inFIG. 30P, to reduce the area of each bit in the array, resulting inhigher performance, lower power, and lower cost due to smaller arraysize. Smaller array size results in the same number of bits occupying areduced silicon chip area, resulting in increased productivity andtherefore lower cost, because there are more chips per wafer. Cell areais decreased by reducing the size (area) of nanotube switch region 3233,thereby reducing the periodicity between nanotube switch regions 3233and correspondingly reducing the spacing between bit lines 3138 andreference lines 3119/3117.

FIG. 33A illustrates cross section A-A′ of array 3231 taken at A-A′ ofthe plan view of array 3231 illustrated in FIG. 33D, and shows FETdevice region 3237 in the FET length direction, reduced area (smaller)nanotube switch structure 3239, interconnections and insulators. Asmaller picture frame opening is formed in combined conductors 3119 and3117 by applying sub-lithographic method 3036 shown in FIG. 26 andcorresponding sub-lithographic structures shown in FIGS. 29D, 29E, and29F during the fabrication of nanotube switch structure 3239. FIG. 33Billustrates cross section B-B′ of array 3231 taken at B-B′ of plan viewof array 3231 illustrated in FIG. 33D, and shows reference line 3163comprising conductive layers 3117 and 3119, and conformal insulatinglayer 3161. Conductive layers 3117 and 3119 of reference line 3163 areextended to form the picture frame region of nanotube device structure3239; however, insulating layer 3161 is not used as part of the nanotubeswitch structure 3239. FIG. 33B also illustrates release line 3205, andword array line 3120. FIG. 33C illustrates cross section C-C′ of array3231 taken at C-C′ of the plan view of array 3231 illustrated in FIG.33D. Bit line 3138 is connected to drain diffusion 3126 through contact3140, to stud 3118A, and through contact 3123. In order to achievegreater array density, there is a small spacing between stud 3118A andreference line 3163. Insulator 3161 is used to prevent electricalshorting between stud 3118A and reference line 3163 conductors 3119 and3117 if stud 3118A is misaligned. FIG. 33D illustrates a plan view ofarray 3231 including exemplary cell 3169 region, with bit array line3138 contacting drain 3126 as illustrated in FIG. 33C, reference arraylines 3163 parallel to bit line 3138 but on a different array wiringlevel (wiring plane). Release array line 3205 is parallel to word arrayline 3120. Release line 3205 contacts and forms a portion of releaseelectrode 3205 as illustrated in the nanotube switching region of FIG.33A. Exemplary cell 3169 area (region) is smaller (denser) thanexemplary cell 3167 area shown in FIG. 32C and exemplary cell 3165 areashown in FIG. 30P, and therefore corresponding array 3231 is denser(occupies less area) than corresponding array areas of array 3229 and3225. The greater density of array 3231 results in higher performance,less power, less use of silicon area, and therefore lower cost as well.In terms of minimum technology feature size, NT-on-source cell 3169 isapproximately 10 to 11 F². Nanotube-on-source array 3231 structuresillustrated in FIGS. 33A-33D correspond to nanotube-on-source array 1700schematic representation illustrated in FIG. 18. Bit line 3138structures correspond to any of bit lines BL0 to BLm−1 schematicrepresentations; reference line 3163 structures correspond to any ofreference lines REF0 to REFm−1 schematic representations; word line 3120structures correspond to any of word lines WL0 to WLn−1 schematicrepresentations; release line 3205 structures correspond to any ofrelease lines RL0 to RLn−1 schematic representations; source contact3140 structures correspond to any of source contacts 1720 schematicrepresentations; nanotube switch structure 3239 correspond to any ofNT0,0 to NTm−1,n−1 schematic representations; and FET 3237 structurescorrespond to any of FET T0,0 to Tm−1, n−1 schematic representations;and exemplary cell 3169 corresponds to any of cells C0,0 to cellCm−1,n−1 schematic representations.

NT-On-Source NRAM Memory Systems and Circuits with Parallel Bit andRelease Lines, and Parallel Word and Reference Lines

NRAM 1T/1NT memory arrays are wired using four lines. Word line WL isused to gate select device T, bit line BL is attached to a shared drainbetween two adjacent select devices. Reference line REF is used tocontrol the NT switch voltage of storage element NT, and release line RLis used to control the release-plate of storage element NT. In this NRAMarray configuration, RL is parallel to BL and acts as second bit line,and REF is parallel to WL and acts as a second word line.

FIG. 34A depicts a structure comprising non-volatile field effectdevice. FED4 80 with memory cell wiring to form NT-on-Source memory cell2000 schematic. Memory cell 2000 operates in a source-follower mode.Word line (WL) 2200 connects to terminal T1 of FED4 80; bit line (BL)2300 connects to terminal T2 of FED4 80; reference line (REF) 2400connects to terminal T3 of FED4 80; and release line (RL) 2500 connectsto terminal T4 of FED4 80 (T1-T4 shown in FIG. 2D). Memory cell 2000performs write and read operations, and stores the information in anon-volatile state. The FED4 80 layout dimensions and operating voltagesare selected to optimize memory cell 2000. Memory cell 2000 FET selecttransistor (T) gate 2040 corresponds to gate 82; drain 2060 correspondsto drain 84; and controllable source 2080 corresponds to controllablesource 86. Memory cell 2000 nanotube (NT) switch-plate 2120 correspondsto switch-plate 88; NT switch 2140 corresponds to NT switch 90;release-plate insulator layer surface 2160 corresponds to release-plateinsulator layer surface 96; and release-plate 2180 corresponds torelease-plate 94. The interconnections between the elements of memorycell 2000 schematic correspond to the interconnection of thecorresponding interconnections of the elements of FED4 80. BL 2300connects to drain 2060 through contact 2320; REF 2400 connects to NTswitch 2140 through contact 2420; RL 2500 connects to release-plate 2180by contact 2520; WL 2200 interconnects to gate 2040 by contact 2220. Thenon-volatile NT switching element 2140 may be caused to deflect towardswitch-plate 2120 via electrostatic forces to closed (“ON”) position2140′ to store a logic “1” state as illustrated in FIG. 34B. The van derWaals force holds NT switch 2140 in position 2140′. Alternatively, thenon-volatile NT switching element 2140 may be caused to deflect toinsulator surface 2160 on release-plate 2180 via electrostatic forces toopen (“OFF”) position 2140″ to store a logic “0” state as illustrated inFIG. 34C. The van der Waals force holds NT switch 2140 in position2140″. Non-volatile NT switching element 2140 may instead be caused todeflect to an open (“OFF”) near-mid point position 2140′″ betweenswitch-plate 2120 and release-plate 2180, storing an apparent logic “0”state as illustrate in FIG. 34D. However, the absence of a van der Waalsretaining force in this open (“OFF”) position is likely to result in amemory cell disturb that causes NT switch 2140 to unintentionallytransition to the closed (“ON”) position, and is not desirable.Sufficient switching voltage is needed to ensure that the NT switch 2140open (“OFF”) position is position 2140″. The non-volatile elementswitching via electrostatic forces is as depicted by element 90 in FIG.2D. Voltage waveforms 311 used to generate the required electrostaticforces are illustrated in FIG. 4.

NT-on-Source schematic 2000 forms the basis of a non-volatile storage(memory) cell. The device may be switched between closed storage state“1” (switched to position 2140′) and open storage state “0” (switched toposition 2140″), which means the controllable source may be written toan unlimited number of times to as desired. In this way, the device maybe used as a basis for a non-volatile nanotube random access memory,which is referred to here as a NRAM array, with the ‘N’ representing theinclusion of nanotubes.

FIG. 35 represents an NRAM system 2700, according to preferredembodiments of the invention. Under this arrangement, an array is formedwith m×n (only exemplary portion being shown) of non-volatile cellsranging from cell C0,0 to cell Cm−1,n−1. NRAM system 2700 may bedesigned using one large m×n array, or several smaller sub-arrays, whereeach sub-array is formed of m×n cells. To access selected cells, thearray uses read and write word lines (WL0, WL1, . . . WLn−1), read andwrite bit lines (BL0, BL1, . . . BLm−1), read and write reference lines(REF0, REF1, . . . REFm−1), and read and write release lines (RL0, RL1,. . . RLn−1). Non-volatile cell C0,0 includes a select device T0,0 andnon-volatile storage element NT0,0. The gate of T0,0 is coupled to WL0,and the drain of T0,0 is coupled to BL0. NT0 is the non-volatilelyswitchable storage element where the NT0,0 switch-plate is coupled tothe source of T0,0, the switching NT element is coupled to REF0, and therelease-plate is coupled to RL0. Connection 2720 connects BL0 to shareddrain of select devices T0,0 and T0,1. Word, bit, reference, and releasedecoders/drivers are explained further below.

Under preferred embodiments, nanotubes in array 2700 may be in the “ON”“1” state or the “OFF” “0” state. The NRAM memory allows for unlimitedread and write operations per bit location. A write operation includesboth a write function to write a “1” and a release function to write a“0”. By way of example, a write “1” to cell C0,0 and a write “0” to cellC1,0 is described. For a write “1” operation to cell C0,0, select deviceT0,0 is activated when WL0 transitions from 0 to V_(SW), BL0 transitionsfrom V_(DD) to 0 volts, RL0 transitions from V_(DD) to switching voltageV_(SW), and REF0 transitions from V_(DD) to switching voltage V_(SW).The release-plate and NT switch of the non-volatile storage elementNT0,0 are each at V_(SW) resulting in zero electrostatic force (becausethe voltage difference is zero). The zero BL0 voltage is applied to theswitch-plate of non-volatile storage element NT0,0 by the controlledsource of select device T0,0. The difference in voltage between theNT0,0 switch-plate and NT switch is V_(SW) and generates an attractingelectrostatic force. If V_(SW) exceeds the nanotube threshold voltageV_(NT-TH), the nanotube structure switches to “ON” state or logic “1”state, that is, the nanotube NT switch and switch-plate are electricallyconnected as illustrated in FIG. 34B. The near-Ohmic connection betweenswitch-plate 2120 and NT switch 2140 in position 2140′ represents the“ON” state or “1” state. If the power source is removed, cell C0,0remains in the “ON” state.

For a write “0” (release) operation to cell C1,0, select device T1,0 isactivated when WL0 transitions from 0 to V_(SW), BL1 transitions fromV_(DD) to V_(SW) volts, RL 1 transitions from V_(DD) to zero volts, andREF0 transitions from V_(DD) to switching voltage V_(SW). The V_(SW) BL1voltage is applied to the switch-plate of non-volatile storage elementNT1,0 by the controlled source of select device T1,0, and switchingvoltage V_(SW) is applied to the NT switch by REF0, resulting in zeroelectrostatic force between switch-plate and NT switch. The non-volatilestorage element NT1,0 release-plate is at switching voltage zero and theNT switch is at switching voltage V_(SW) generating an attractingelectrostatic force. If V_(SW) exceeds the nanotube threshold voltageV_(NT-TH), the nanotube structure switches to the “OFF” state or logic“0” state, that is, the nanotube NT switch and the surface of therelease-plate insulator are in contact as illustrated in FIG. 34C. Thenon-conducting contact between insulator surface 2160 on release-plate2180 and NT switch 2140 in position 2140″ represents the “OFF” state or“0” state. If the power source is removed, cell C1,0 remains in the“OFF” state.

An NRAM read operation does not change (destroy) the information in theactivated cells, as it does in a DRAM, for example. Therefore the readoperation in the NRAM is characterized as a non-destructive readout (orNDRO) and does not require a write-back after the read operation hasbeen completed. For a read operation of cell C0,0, BL0 is driven high toV_(DD) and allowed to float. WL0 is driven high to V_(DD) and selectdevice T0,0 turns on. REF0 is at zero volts, and RL0 is at V_(DD). Ifcell C0,0 stores an “ON” state (“1” state) as illustrated in FIG. 34B,BL0 discharges to ground through a conductive path that includes selectdevice T0,0 and non-volatile storage element NT0,0 in the “ON” state,the BL0 voltage drops, and the “ON” state or “1” state is detected by asense amplifier/latch circuit (not shown) that records the voltage dropby switching the latch to a logic “1” state. BL0 is connected by theselect device T0,0 conductive channel of resistance R_(FET) to theswitch-plate of NT0,0. The switch-plate of NT0,0 in the “ON” statecontacts the NT switch with contact resistance R_(SW) and the NT switchcontacts reference line REF0 with contact resistance R_(C). The totalresistance in the discharge path is R_(FET)+R_(SW)+R_(C). Otherresistance values in the discharge path, including the resistance of theNT switch, are much small and may be neglected

For a read operation of cell C1,0, BL1 is driven high to V_(DD) andallowed to float. WL0 is driven high to V_(DD) and select device T1,0turns on. REF0=0, and RL1 is at V_(DD). If cell C1,0 stores an “OFF”state (“0” state) as illustrated in FIG. 34C, BL1 does not discharge toground through a conductive path that includes select device T1,0 andnon-volatile storage element NT1,0 in the “OFF” state, because theswitch-plate is not in contact with the NT switch when NT1,0 is in the“OFF” state, and the resistance R_(C) is large. During read, BL2 toBLm−1 is at zero volts. Sense amplifier/latch circuit (not shown) doesnot detect a voltage drop and the latch is set to a logic “0” state.

FIG. 36 illustrates the operational waveforms 2800 of memory array 2700of FIG. 35 during read, write “1”, and write “0” operations for selectedcells, while not disturbing unselected cells (no change to unselectedcell stored logic states). Waveforms 2800 illustrate voltages andtimings to write logic state “1” in cell C0,0, write a logic state “0”in cell C1,0, read cell C0,0, and read cell C1,0. Waveforms 2800 alsoillustrate voltages and timings to prevent disturbing the stored logicstates (logic “1” state and logic “0” state) in partially selected (alsoreferred to as half-selected) cells. Partially selected cells are cellsin memory array 2700 that receive applied voltages because they areconnected to (share) word, bit, reference, and release lines that areactivated as part of the read or write operation to the selected cells.Cells in memory array 2700 tolerate unlimited read and write operationsat each memory cell location.

At the start of the write cycle, WL0 transitions from zero to V_(SW),activating select devices T0,0, T1,0, . . . Tm−1,0. Word lines WL1, WL2,. . . WLn−1 are not selected and remain at zero volts. BL0 transitionsfrom V_(DD) to zero volts, connecting the switch-plate of non-volatilestorage element NT0,0 to zero volts. BL1 transitions from V_(DD) toV_(SW) connecting the switch-plate of non-volatile storage element NT1,0to V_(SW) volts. BL2, BL3, . . . BLm−1 transition to V_(SW) connectingthe switch-plate of non-volatile storage elements NT2,0, NT3,0 . . .NTm−1,0 to V_(WS). RL0 transitions from V_(DD) to switching voltageV_(SW), connecting the release-plates of non-volatile storage elementsNT0,0, NT0,1, . . . NT0,n−2, NT0,n−1 to V_(SW). RL1 transitions fromV_(DD) to zero volts, connecting the release-plates of non-volatilestorage elements NT1,0, NT1,1 . . . NT1,n−2,NT1,n−1 to zero volts. RL2,RL3, . . . RLm−1 remain at V_(DD), connecting the release-plates ofnon-volatile storage elements NT3,0 to NTm−1,n−1 to V_(DD). REF0transitions from V_(DD) to switching voltage V_(SW), connecting NTswitches of non-volatile storage elements NT0,0, NT1,0, . . . NTm−1,0 toV_(SW). REF1, REF2 . . . REFn−1 remain at V_(DD), connecting NT switchesof non-volatile storage elements NT0,1 to NTn−1,n−1 to V_(DD).

NT0,0 may be in “ON” (“1” state) or “OFF” (“0” state) state at the startof the write cycle. It will be in “ON” state at the end of the writecycle. If NT0,0 in cell C0,0 is “OFF” (“0” state) it will switch to “ON”(“1” state) since the voltage difference between NT switch andrelease-plate is zero, and the voltage difference between NT switch andswitch-plate is V_(SW). If NT0,0 in cell C0,0 is in the “ON” (“1”state), it will remain in the “ON” (“1”) state. NT1,0 may be in “ON”(“1” state) or “OFF” (“0” state) state at the start of the write cycle.It will be in “OFF” state at the end of the write cycle. If NT1,0 incell C1,0 is “ON” (“1” state) it will switch to “OFF” (“0” state) sincethe voltage difference between NT switch and switch-plate is zero, andthe voltage difference between NT switch and release-plate is V_(SW). IfNT1,0 in cell C1,0 is “OFF” (“0” state), it will remain “OFF” (“0”state). If for example, V_(SW)=3.0 volts, V_(DD)=1.5 volts, and NTswitch threshold voltage range is V_(NT-TH) =1.7 to 2.8 volts, then forNT0,0 and NT1,0 a difference voltage V_(SW)>V_(NT-TH) ensuring writestates of “ON” (“1” state) for NT0,0 and “OFF” (“0” state) for NT1,0.

Cells C0,0 and C1,0 have been selected for the write operation. Allother cells have not been selected, and information in these other cellsmust remain unchanged (undisturbed). Since in an array structure somecells other than selected cells C0,0 and C1,0 in array 2700 willexperience partial selection voltages, often referred to as half-selectvoltages, it is necessary that half-select voltages applied tonon-volatile storage element terminals be sufficiently low (belownanotube activation threshold V_(NT-TH)) to avoid disturbing storedinformation. For storage cells in the “ON” state, it is also necessaryto avoid parasitic current flow (there cannot be parasitic currents forcells in the “OFF” state because the NT switch is not in electricalcontact with switch-plate or release-plate). Potential half-selectdisturb along activated array lines WL0 and REF0 includes cells C3,0 toCm−1,0 because WL0 and REF0 have been activated. Storage elements NT3,0to NTm−1,0 will have BL2 to BLm−1 electrically connected to thecorresponding storage element switch-plate by select devices T3,0 toTm−1,0. All NT switches in these storage elements are at write voltageV_(SW). To prevent undesired switching of NT switches, RL2 to RLm−1reference lines are set at voltage V_(DD). BL2 to BLm−1 voltages are setto V_(SW) to prevent parasitic currents. The information in storageelements NT2,0 to NTm−1,0 in cells C2,0 to Cm−1,0 is not disturbed andthere is no parasitic current. For those cells in the “OFF” state, therecan be no parasitic currents (no current path), and no disturb becausethe voltage differences favor the “OFF” state. For those cells in the“ON” state, there is no parasitic current because the voltage differencebetween switch-plates (at V_(DD)) and NT switches (at V_(DD)) is zero.Also, for those cells in the “ON” state, there is no disturb because thevoltage difference between corresponding NT switches and release-plateis V_(SW)−V_(DD)=1.5 volts, when V_(SW) =3.0 volts and V_(DD)=1.5 volts.Since this voltage difference of 1.5 volts is less than the minimumnanotube threshold voltage V_(NT-TH) of 1.7 volts, no switching takesplace.

Potential half-select disturb along activated array lines RL0 and BL0includes cells C0,1 to C0, n−1 because RL0 and BL0 have been activated.Storage elements NT0,1 to NT0, n−1 all have corresponding switch-platesconnected to switching voltage V_(SW). To prevent undesired switching ofNT switches, REF1 to REFn−1 are set at voltage V_(DD). WL1 to WL n−1 areset at zero volts, therefore select devices T0,1 to T0,n−1 are open, andswitch-plates (all are connected to select device source diffusions) arenot connected to bit line BL0. All switch-plates are in contact with acorresponding NT switch for storage cells in the “ON” state, and allswitch plates are only connected to corresponding “floating” sourcediffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT0,1 toNT0,n−1 in cells C0,1 to C0,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at voltage V_(SW). There is a voltage difference ofV_(SW)−V_(DD) between corresponding NT switch and release-plate. ForV_(SW)=3.0 volts and V_(DD)=1.5 volts, the voltage difference of 1.5volts is below the minimum V_(NT-TH)=1.7 volts for switching. For cellsin the “OFF” state, the voltage difference between corresponding NTswitch and switch-plate ranges from V_(DD) to V_(DD)-0.6 volts. Thevoltage difference between corresponding NT switch and switch-plate maybe up to 1.5 volts, which is less than V_(NT-TH) minimum voltage of 1.7volts, and does not disturb the “OFF” cells by switching them to the“ON” state. There is also a voltage difference between corresponding NTswitch and release-plate of V_(W)−V_(DD) of 1.5 volts with anelectrostatic force that supports the “OFF” state.

Potential half-select disturb along activated array lines RL1 and BL1includes cells C1,1 to C1, n−1 because RL1 and BL1 have been activated.Storage elements NT1,1 to NT1, n−1 all have corresponding NTrelease-plates connected to zero volts. To prevent undesired switchingof NT switches, REF1 to REFn−1 are set at voltage V_(DD). WL1 to WL n−1are set at zero volts, therefore select devices T1,1 to T1,n−1 are open,and switch-plates (all are connected to select device source diffusions)are not connected to bit line BL1. All switch-plates are in contact witha corresponding NT switch for storage cells in the “ON” state, and allswitch plates are only connected to corresponding “floating” sourcediffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT1,1 toNT1,n−1 in cells C1,1 to C1,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at voltage V_(DD). There is a voltage difference of V_(DD)between corresponding NT switches and release-plates. For V_(DD)=1.5volts, the voltage difference of 1.5 volts is below the minimumV_(NT-TH) =1.7 volts for switching. For cells in the “OFF” state, thevoltage of the switch-plate ranges zero to 0.6 volts. The voltagedifference between corresponding NT switch and switch-plate may be up toV_(DD). There is also a voltage difference between corresponding NTswitch and release-plate of V_(DD)=1.5 volts. V_(DD) is less than theminimum V_(NT-TH) of 1.7 volts the “OFF” state remains unchanged.

For all remaining memory cells 2700, C2,1 to Cm−1,n−1, there is noelectrical connection between NT2,1 to NTm−1,n−1 switch-plates connectedto corresponding select device source and corresponding bit lines BL2 toBLm−1 because WL1 to WLn−1 are at zero volts, and select devices T2,1 toTm−1,n−1 are open. Release line voltages for RL2 to RLm−1 are set atV_(DD) and reference line voltages for REF1 to REFn−1 are set at V_(DD).Therefore, all NT switches are at V_(DD) and all correspondingrelease-plates are at V_(DD), and the voltage difference betweencorresponding NT switches and release-plates is zero. For storage cellsin the “ON” state, NT switches are in contact with correspondingswitch-plates and the voltage difference is zero. For storage cells inthe “OFF” state, switch-plate voltages are zero to a maximum of 0.6volts. The maximum voltage difference between NT switches andcorresponding switch-plates is V_(DD)=1.5 volts, which is below theV_(NT-TH) voltage minimum voltage of 1.7 volts. The “ON” and “OFF”states remain undisturbed.

Non-volatile NT-on-source NRAM memory array 2700 with bit lines parallelto release lines is shown in FIG. 35 contains 2^(N)×2^(M) bits, is asubset of non-volatile NRAM memory system 2810 illustrated as memoryarray 2815 in FIG. 37A. NRAM memory system 2810 may be configured tooperate like an industry standard asynchronous SRAM or synchronous SRAMbecause nanotube non-volatile storage cells 2000 shown in FIG. 34A, inmemory array 2700, may be read in a non-destructive readout (NDRO) modeand therefore do not require a write-back operation after reading, andalso may be written (programmed) at CMOS voltage levels (5, 3.3, and 2.5volts, for example) and at nanosecond and sub-nanosecond switchingspeeds. NRAM read and write times, and cycle times, are determined byarray line capacitance, and are not limited by nanotube switching speed.Accordingly, NRAM memory system 2810 may be designed with industrystandard SRAM timings such as chip-enable, write-enable, output-enable,etc., or may introduce new timings, for example. Non-volatile NRAMmemory system 2810 may be designed to introduce advantageous enhancedmodes such as a sleep mode with zero current (zero power-power supplyset to zero volts), information preservation when power is shut off orlost, enabling rapid system recovery and system startup, for example.NRAM memory system 2810 circuits are designed to provide the memoryarray 2700 waveforms 2800 shown in FIG. 36.

NRAM memory system 2810 accepts timing inputs 2812, accepts addressinputs 2825, and accepts data 1867 from a computer, or provides data2867 to a computer using a bidirectional bus sharing input/output (I/O)terminals. Alternatively, inputs and outputs may use separate (unshared)terminals (not shown). Address input (I/P) buffer 2830 receives addresslocations (bits) from a computer system, for example, and latches theaddresses. Address I/P buffer 2830 provides word address bits to worddecoder 2840 via address bus 2837; address I/P buffer 2830 provides bitaddresses to bit decoder 2850 via address bus 2852; and address bustransitions provided by bus 2835 are detected by function generating,address transition detecting (ATD) timing waveform generator, controller(controller) 2820. Controller 2820 provides timing waveforms on bus 2839to word decoder 2840. Word decoder 2840 selects the word addresslocation within array 2815. Word address decoder 2840 is used to decodeboth word lines WL and corresponding reference lines REF (there is noneed for a separate REF decoder) and drives word line (WL) and referenceline (REF) select logic 2845. Controller 2820 provides function andtiming inputs on bus 2843 to WL & REF select logic 2845, resulting inNRAM memory system 2810 on-chip WL and REF waveforms for both write-one,write-zero, read-one, and read-zero operations as illustrated bywaveforms 2800′ shown in FIG. 38. FIG. 38 NRAM memory system 2810waveforms 2800′ correspond to memory array 2700 waveforms 2800 shown inFIG. 36.

Bit address decoder 2850 is used to decode both bit lines BL andcorresponding release lines RL (there is no need for a separate RLdecoder) and drive bit line (BL) and release (RL) select logic 2855 viabus 2856. Controller 2820 provides timing waveforms on bus 2854 to bitdecoder 2850. Controller 2820 also provides function and timing inputson bus 2857 to BL & RL select logic 2855. BL & RL select logic 2855 usesinputs from bus 2856 and bus 2857 to generate data multiplexer selectbits on bus 2859. The output of BL and RL select logic 2855 on bus 2859is used to select control data multiplexers using combined datamultiplexers & sense amplifiers/latches (MUXs & SAs) 2860. Controller2820 provides function and timing inputs on bus 2862 to MUXs & SAs 2860,resulting in NRAM memory system 2810 on-chip BL and RL waveforms forboth write-one, write-zero, read-one, and read-zero operations asillustrated by waveforms 2800′ corresponding to memory array 2700waveforms 2800 shown in FIG. 36. MUXs & SAs 2860 are used to write dataprovided by read/write buffer 2865 via bus 2864 in array 2815, and toread data from array 2815 and provide the data to read/write buffer 2865via bus 2864 as illustrated in waveforms 2800′.

Sense amplifier/latch 2900 is illustrated in FIG. 37B. Flip flop 2910,comprising two back-to-back inverters is used to amplify and latch datainputs from array 2815 or from read/write buffer 2865. Transistor 2920connects flip flop 2910 to ground when activated by a positive voltagesupplied by control voltage V_(TIMING) 2980, which is provided bycontroller 2820. Gating transistor 2930 connects a bit line BL to node2965 of flip flop 2910 when activated by a positive voltage. Gatingtransistor 2940 connects reference voltage V_(REF) to flip flop node2975 when activated by a positive voltage. Transistor 2960 connectsvoltage V_(DD) to flip flop 2910 node 2965, transistor 2970 connectsvoltage V_(DD) to flip flop 2910 node 2975, and transistor 2950 ensuresthat small voltage differences are eliminated when transistors 2960 and2970 are activated. Transistors 2950, 2960, and 2970 are activated(turned on) when gate voltage is low (zero, for example).

In operation, V_(TIMING) voltage is at zero volts when sense amplifier2900 is not selected. NFET transistors 2920, 2930, and 2940 are in the“OFF” (non-conducting) state, because gate voltages are at zero volts.PFET transistors 2950, 2960, and 2970 are in the “ON” (conducting) statebecause gate voltages are at zero volts. V_(DD) may be 5, 3.3, or 2.5volts, for example, relative to ground. Flip flop 2910 nodes 2965 and2975 are at V_(DD). If sense amplifier/latch 2900 is selected,V_(TIMING) transitions to V_(DD), NFET transistors 2920, 2930, and 2940turn “ON”, PFET transistors 2950, 2960, and 2970 are turned “OFF”, andflip flop 2910 is connected to bit line BL and reference voltageV_(REF). V_(REF) is connected to V_(DD) in this example. As illustratedby waveforms BL0 and BL1 of waveforms 2800′, bit line BL is pre-chargedprior to activating a corresponding word line (WL0 in this example). Ifcell 2000 of memory array 2700 (memory system array 2815) stores a “1”,then bit line BL in FIG. 37B corresponds to BL0 in FIG. 38, BL isdischarged by cell 2000, voltage droops below V_(DD), and senseamplifier/latch 2900 detects a “1” state. If cell 2000 of memory array2700 (memory system array 2815) stores a “0”, then bit line BL in FIG.37B corresponds to BL1 in FIG. 38, BL is not discharged by cell 2000,voltage does not droop below V_(DD), and sense amplifier/latch 2900detect a “0” state. The time from sense amplifier select to signaldetection by sense amplifier/latch 2900 is referred to as signaldevelopment time. Sense amplifier/latch 2900 typically requires 100 to200 mV relative to V_(REF) in order to switch. It should be noted thatcell 2000 requires a nanotube “OFF” resistance to “ON” resistance ratioof greater than 10 to 1 for successful operation. A typical bit line BLhas a capacitance value of 250 fF, for example. A typical nanotubestorage device (switch) or dimensions 0.2 by 0.2 um typically has 8nanotube filaments across the suspended region, for example, asillustrated further below. For a combined contact and switch resistanceof 50,000 Ohms per filament, as illustrated further below, the nanotube“ON” resistance of cell 2000 is 6,250 Ohms. For a bit line of 250 fF,the time constant RC=1.6 ns. The sense amplifier signal development timeis less than RC, and for this example, is between 1 and 1.5 nanoseconds.

Non-volatile NRAM memory system 2810 operation may be designed for highspeed cache operation at 5 ns or less access and cycle time, forexample. Non-volatile NRAM memory system 2810 may be designed for lowpower operation at 60 or 70 ns access and cycle time operation, fornon-limiting example. For low power operation, address I/P buffer 2830operation typically requires 8 ns; controller 2820 operation requires 16ns; bit decoder 2850 operation plus BL & RL select logic 2855 plus MUXs& SA 2860 operation requires 12 ns (word decoder 2840 operation plus WL& RL select logic 2845 ns require less than 12 ns); array 2815 delay is8 ns; operation of sense latch 2900 requires 8 ns; and read/write buffer2865 requires 12 ns, for non-limiting example. The access time and cycletime of non-volatile NRAM memory system 2810 is 64 ns. The access timeand cycle time may be equal because the NDRO mode of operation ofnanotube storage devices (switches) does not require a write-backoperation after access (read).

NT-on-source arrays with bit lines BL parallel to release lines RL andreference lines REF parallel to word lines WL may be fabricated byapplying methods illustrated previously illustrated above to fabricatepreferred NT-on-source arrays with BLs parallel to REF lines and WLsparallel to RLs. Examples of preferred NT-on-source arrays with BLsparallel to REF lines and WLs parallel to RLs are illustrated by array3225 in FIGS. 30M′, 30N, and 30P; array 3229 shown in FIGS. 32A-32C, andarray 3231 shown in FIGS. 33A-33D. The methods used to fabricate arrays3225, 3229, and 3231 may be used to fabricate NT-on-source arrays withBLs parallel to RLs, and WLs parallel to REF lines. These methodsinclude methods 3000 shown in FIG. 22 and corresponding figures andstructures; methods 3004 shown in FIGS. 23 and 23′ and correspondingfigures and structures; methods 3036 shown in FIG. 26 and correspondingfigures and structures; methods 3006 shown in FIGS. 27 and 27′ andcorresponding figures and structures; methods 3008 shown in FIGS. 28 and28′ and corresponding figures and structures; and other methods andstructures illustrated in fabricating arrays 3225, 3229, and 3231 asdescribed above.

Nanotube Random Access Memory Using FEDs with Controllable Drains

Nanotube Random Access Memory (NRAM) Systems and Circuits, with Same

Non-volatile field effect devices (FEDs) 100, 120, 140, and 160 withcontrollable drains may be used as cells and interconnected into arraysto form non-volatile nanotube random access memory (NRAM) systems. Thememory cells contain one select device (transistor) T and onenon-volatile nanotube storage element NT (1T/1NT cells). By way ofexample, FED8 160 (FIG. 2H) is used to form a non-volatile NRAM memorycell that is also referred to as a NT-on-Drain memory cell.

NT-On-Drain NRAM Memory Systems and Circuits with Parallel Bit andReference Lines, and Parallel Word and Release Lines

NRAM 1T/1NT memory arrays are wired using four lines. Word line WL isused to gate select device T, reference line REF is attached to a sharedsource between two adjacent select devices. Bit line BL is used tocontrol NT switch voltage of storage element NT, and release line RL isused to control the release-plate of storage element NT. In this NRAMarray configuration, REF is parallel to BL and acts as second bit line,and RL is parallel to WL and acts as a second word line.

FIG. 39A depicts non-volatile field effect device 160 with memory cellwiring to form NT-on-Drain memory cell 4000 schematic. Word line (WL)4200 connects to terminal T1 of FED8 160; bit line (BL) 4400 connects toterminal T2 or FED8 160; reference line (REF) 4300 connects to terminalT3 of FED8 160; and release line (RL) 4500 connects to terminal T4 ofFED8 160. Memory cell 4000 performs write and read operations, andstores the information in a non-volatile state. The FED8 160 layoutdimensions and operating voltages are selected to optimize memory cell4000. Memory cell 4000 FET select device (T) gate 4040 corresponds togate 162; controllable drain 4080 corresponds to controllable drain 164;and source 4060 corresponds to source 166. Memory cell 4000 nanotube(NT) switch-plate 4120 corresponds to switch-plate 168; NT switch 4140corresponds to NT switch 170; release-plate insulator layer surface 4160corresponds to release-plate insulator layer surface 176; andrelease-plate 4180 corresponds to release-plate 174. Theinterconnections between the elements of memory cell 4000 schematiccorrespond to the interconnection of the corresponding interconnectionsof the elements of FED8 160. REF 4300 connects to source 4060 throughcontact 4320; BL 4400 connects to NT switch 4140 through contact 4420;RL 4500 connects to release-plate 4180 by contact 4520; WL 4200interconnects to gate 4040 by contact 4220. The non-volatile NTswitching element 4140 may be caused to deflect toward switch-plate 4120via electrostatic forces to closed (“ON”) position 4140′ to store alogic “1” state as illustrated in FIG. 39B. The van der Waals forceholds NT switch 4140 in position 4140′. Alternatively, the non-volatileNT switching element 4140 may be caused to deflect to insulator surface4160 on release-plate 4180 via electrostatic forces to open (“OFF”)position 4140″ to store a logic “0” state as illustrated in FIG. 39C.The van der Waals force holds NT switch 4140 in position 4140″.Non-volatile NT switching element 4140 may instead be caused to deflectto an open (“OFF”) near-mid point position 4140′″ between switch-plate4120 and release-plate 4180, storing an apparent logic “0” state asillustrate in FIG. 24D. However, the absence of a van der Waalsretaining force in this open (“OFF”) position is likely to result in amemory cell disturb that causes NT switch 4140 to unintentionallytransition to the closed (“ON”) position, and is not desirable.Sufficient switching voltage is needed to ensure that the NT switch 4140open (“OFF”) position is position 4140″. The non-volatile elementswitching via electrostatic forces is as depicted by element 170 in FIG.2H. Voltage waveforms 355 used to generate the required electrostaticforces are illustrated in FIG. 11.

NT-on-Drain memory cell schematic 4000 forms the basis of a non-volatilestorage (memory) cell. The device may be switched between closed storagestate “1” (switched to position 4140′) and open storage state “0”(switched to position 4140″), which means the controllable drain may bewritten to an unlimited number of times to as desired. In this way, thedevice may be used as a basis for a non-volatile nanotube random accessmemory, which is referred to here as a NRAM array, with the ‘N’representing the inclusion of nanotubes.

FIG. 40 represents an NRAM system 4700, according to preferredembodiments of the invention. Under this arrangement, an array is formedwith m×n (only exemplary portion being shown) of non-volatile cellsranging from cell C0,0 to cell Cm−1,n−1. NRAM system 4700 may bedesigned using one large m×n array, or several smaller sub-arrays, whereeach sub-array if formed of m×n cells. To access selected cells, thearray uses read and write word lines (WL0, WL1, . . . WLn−1), read andwrite bit lines (BL0, BL1, . . . BLm−1), read and write reference lines(REF0, REF1, . . . REFm−1), and read and write release lines (RL0, RL1,. . . RLn−1). Non-volatile cell C0,0 includes a select device T0,0 andnon-volatile storage element NT0,0. The gate of T0,0 is coupled to WL0,and the source of T0,0 is coupled to REF0. NT0 is the non-volatilelyswitchable storage element where the NT0,0 switch-plate is coupled tothe drain of T0,0, the switching NT element is coupled to BL0, and therelease-plate is coupled to RL0. Connection 4720 connects REF0 to sharedsource of select devices T0,0 and T0,1. Word, bit, reference, andrelease decoders/drivers are explained further below.

Under preferred embodiments, nanotubes in array 4700 may be in the “ON”“1” state or the “OFF” “0” state. The NRAM memory allows for unlimitedread and write operations per bit location. A write operation includesboth a write function to write a “1” and a release function to write a“0”. By way of example, a write “1” to cell C0,0 and a write “0” to cellC1,0 is described. For a write “1” operation to cell C0,0, select deviceT0,0 is activated when WL0 transitions from 0 to V_(DD), REF0transitions from V_(DD) to 0 volts, BL0 transitions from V_(DD) toswitching voltage V_(SW), and RL0 transitions from V_(DD) to switchingvoltage V_(SW). The release-plate and NT switch of the non-volatilestorage element NT0,0 are each at V_(SW) resulting in zero electrostaticforce (because the voltage difference is zero). The zero REF0 voltage isapplied to the switch-plate of non-volatile storage element NT0,0 by thecontrolled drain of select device T0,0. The difference in voltagebetween the NT0,0 switch-plate and NT switch is V_(SW) and generates anattracting electrostatic force. If V_(SW) exceeds the nanotube thresholdvoltage V_(NT-TH), the nanotube structure switches to “ON” state orlogic “1” state, that is, the nanotube NT switch and switch-plate areelectrically connected as illustrated in FIG. 39B. The near-Ohmicconnection between switch-plate 4120 and NT switch 4140 in position4140′ represents the “ON” state or “1” state. If the power source isremoved, cell C0,0 remains in the “ON” state.

For a write “0” (release) operation to cell C1,0, select device T1,0 isactivated when WL0 transitions from 0 to V_(DD), REF1 transitions fromV_(DD) to 0 volts, BL1 transitions from V_(DD) to zero volts, and RL0transitions from V_(DD) to switching voltage V_(SW). The zero REF1voltage is applied to the switch-plate of non-volatile storage elementNT1,0 by the controlled drain of select device T1,0, and zero volts isapplied the NT switch by BL1, resulting in zero electrostatic forcebetween switch-plate and NT switch. The non-volatile storage elementNT1,0 release-plate is at switching voltage V_(SW) and the NT switch isat zero volts generating an attracting electrostatic force. If V_(SW)exceeds the nanotube threshold voltage V_(NT-TH), the nanotube structureswitches to the “OFF” state or logic “0” state, that is, the nanotube NTswitch and the surface of the release-plate insulator are in contact asillustrated in FIG. 39C. The non-conducting contact between insulatorsurface 4160 on release-plate 4180 and NT switch 4140 in position 4140″represents the “OFF” state or “0” state. If the power source is removed,cell C1,0 remains in the “OFF” state.

An NRAM read operation does not change (destroy) the information in theactivated cells, as it does in a DRAM, for example. Therefore the readoperation in the NRAM is characterized as a non-destructive readout (orNDRO) and does not require a write-back after the read operation hasbeen completed. For a read operation of cell C0,0, BL0 is driven high toV_(DD) and allowed to float. WL0 is driven high to V_(DD) and selectdevice T0,0 turns on. REF0 is at zero volts, and RL0 is at V_(DD). Ifcell C0,0 stores an “ON” state (“1” state) as illustrated in FIG. 39B,BL0 discharges to ground through a conductive path that includes selectdevice T0,0 and non-volatile storage element NT0,0 in the “ON” state,the BL0 voltage drops, and the “ON” state or “1” state is detected by asense amplifier/latch circuit (not shown) that records the voltage dropby switching the latch to a logic “1” state. REF0 is connected by theselect device T0,0 conductive channel of resistance R_(FET) to theswitch-plate of NT0,0. The switch-plate of NT0,0 in the “ON” statecontacts the NT switch with contact resistance R_(SW) and the NT switchcontacts bit line BL0 with contact resistance R_(C). The totalresistance in the discharge path is R_(FET)+R_(SW)+R_(C). Otherresistance values in the discharge path, including the resistance of theNT switch, are much small and may be neglected

For a read operation of cell C1,0, BL1 is driven high to V_(DD) andallowed to float. WL0 is driven high to V_(DD) and select device T1,0turns on. REF1=0, and RL0 is at V_(DD). If cell C1,0 stores an “OFF”state (“0” state) as illustrated in FIG. 39C, BL1 does not discharge toground through a conductive path that includes select device T1,0 andnon-volatile storage element NT1,0 in the “OFF” state, because theswitch-plate is not in contact with the NT switch when NT1,0 is in the“OFF” state, and the resistance R_(C) is large. Sense amplifier/latchcircuit (not shown) does not detect a voltage drop and the latch is setto a logic “0” state.

FIG. 41 illustrates the operational waveforms 4800 of memory array 4700of FIG. 40 during read, write “1”, and write “0” operations for selectedcells, while not disturbing unselected cells (no change to unselectedcell stored logic states). Waveforms 4800 illustrate voltages andtimings to write logic state “1” in cell C0,0, write a logic state “0”in cell C1,0, read cell C0,0, and read cell C1,0. Waveforms 4800 alsoillustrate voltages and timings to prevent disturbing the stored logicstates (logic “1” state and logic “0” state) in partially selected (alsoreferred to as half-selected) cells. Partially selected cells are cellsin memory array 4700 that receive applied voltages because they areconnected to (share) word, bit, reference, and release lines that areactivated as part of the read or write operation to the selected cells.Cells in memory array 4700 tolerate unlimited read and write operationsat each memory cell location.

At the start of the write cycle, WL0 transitions from zero to V_(DD),activating select devices T0,0, T1,0, . . . Tm−1,0. Word lines WL1, WL2. . . WLn−1 are not selected and remain at zero volts. REF0 transitionsfrom V_(DD) to zero volts, connecting the switch-plate of non-volatilestorage element NT0,0 to zero volts. REF1 transitions from V_(DD) tozero volts connecting the switch-plate of non-volatile storage elementNT1,0 to zero volts. REF2, REF3 . . . REFm−1 remain at V_(DD) connectingthe switch-plate of non-volatile storage elements NT2,0, NT3,0 . . .NTm−1,0 to V_(DD). BL0 transitions from V_(DD) to switching voltageV_(SW), connecting the NT switches of non-volatile storage elementsNT0,0, NT0,1 . . . NT0,n−2, NT0,n−1 to V_(SW). BL1 transitions fromV_(DD) to zero volts, connecting the NT switches of non-volatile storageelements NT1,0, NT1,1 . . . NT1,n−2,NT1,n−1 to zero volts. BL2, BL3 . .. BLm−1 remain at V_(DD), connecting the NT switches of non-volatilestorage elements NT3,0 to NTm−1,n−1 to V_(DD). RL1, RL2 . . . RLn−1remain at V_(DD), connecting release-plates of non-volatile storageelements NT0,1 to NTn−1,n−1 to V_(DD).

NT0,0 may be in “ON” (“1” state) or “OFF” (“0” state) state at the startof the write cycle. It will be in “ON” state at the end of the writecycle. If NT0,0 in cell C0,0 is “OFF” (“0” state) it will switch to “ON”(“1” state) since the voltage difference between NT switch andrelease-plate is zero, and the voltage difference between NT switch andswitch-plate is V_(SW). If NT0,0 in cell C0,0 is in the “ON” (“1”state), it will remain in the “ON” (“1”) state. NT1,0 may be in “ON”(“1” state) or “OFF” (“0” state) state at the start of the write cycle.It will be in “OFF” state at the end of the write cycle. If NT1,0 incell C1,0 is “ON” (“1” state) it will switch to “OFF” (“0” state) sincethe voltage difference between NT switch and switch-plate is zero, andthe voltage difference between NT switch and release-plate is V_(SW). IfNT1,0 in cell C1,0 is “OFF” (“0” state), it will remain “OFF” (“0”state). If for example, V_(SW)=3.0 volts, V_(DD)=1.5 volts, and NTswitch threshold voltage range is V_(NT-TH) =1.7 to 2.8 volts, then forNT0,0 and NT1,0 a difference voltage V_(W)>V_(NT-TH) ensuring writestates of “ON” (“1” state) for NT0,0 and “OFF” (“0” state) for NT1,0.

Cells C0,0 and C1,0 have been selected for the write operation. Allother cells have not been selected, and information in these other cellsmust remain unchanged (undisturbed). Since in an array structure somecells other than selected cells C0,0 and C1,0 in array 4700 willexperience partial selection voltages, often referred to as half-selectvoltages, it is necessary that half-select voltages applied tonon-volatile storage element terminals be sufficiently low (belownanotube activation threshold V_(NT-TH)) to avoid disturbing storedinformation. For storage cells in the “ON” state, it is also necessaryto avoid parasitic current flow (there cannot be parasitic currents forcells in the “OFF” state because the NT switch is not in electricalcontact with switch-plate or release-plate). Potential half-selectdisturb along activated array lines WL0 and RL0 includes cells C3,0 toCm−1,0 because WL0 and RL0 have been activated. Storage elements NT3,0to NTm−1,0 will have REF2 to REFm−1 electrically connected to thecorresponding storage element switch-plate by select devices T3,0 toTm−1,0. All release-plates in these storage elements are at writevoltage V_(SW). To prevent undesired switching of NT switches, BL2 toBLm−1 reference lines are set at voltage V_(DD). REF2 to REFm−1 voltagesare set to V_(DD) to prevent parasitic currents. The information instorage elements NT2,0 to NTm−1,0 in cells C2,0 to Cm−1,0 is notdisturbed and there is no parasitic current. For those cells in the“OFF” state, there can be no parasitic currents (no current path), andno disturb because the voltage differences favor the “OFF” state. Forthose cells in the “ON” state, there is no parasitic current because thevoltage difference between switch-plates (at V_(DD)) and NT switches (atV_(DD)) is zero. Also, for those cells in the “ON” state, there is nodisturb because the voltage difference between corresponding NT switchesand release-plate is V_(SW)−V_(DD)=1.5 volts, when V_(SW) =3.0 volts andV_(DD)=1.5 volts. Since this voltage difference of 1.5 volts is lessthan the minimum nanotube threshold voltage V_(NT-TH) of 1.7 volts, noswitching takes place.

Potential half-select disturb along activated array lines REF0 and BL0includes cells C0,1 to C0, n−1 because REF0 and BL0 have been activated.Storage elements NT0,1 to NT0, n−1 all have corresponding NT switchesconnected to switching voltage V_(SW). To prevent undesired switching ofNT switches, RL1 to RLn−1 are set at voltage V_(DD). WL1 to WL n−1 areset at zero volts, therefore select devices T0,1 to T0,n−1 are open, andswitch-plates (all are connected to select device drain diffusions) arenot connected to bit line REF0. All switch-plates are in contact with acorresponding NT switch for storage cells in the “ON” state, and allswitch plates are only connected to corresponding “floating” draindiffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT0,1 toNT0,n−1 in cells C0,1 to C0,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at voltage V_(SW). There is a voltage difference ofV_(W)−V_(DD) between corresponding NT switch and release-plate. ForV_(SW)=3.0 volts and V_(DD)=1.5 volts, the voltage difference of 1.5volts is below the minimum V_(NT-TH) =1.7 volts for switching. For cellsin the “OFF” state, the voltage difference between corresponding NTswitch and switch-plate ranges from V_(SW) to V_(SW)−0.6 volts. Thevoltage difference between corresponding NT switch and switch-plate maybe up to 3.0 volts, which exceeds the V_(NT-TH) voltage, and woulddisturb “OFF” cells by switching them to the “ON” state. However, thereis also a voltage difference between corresponding NT switch andrelease-plate of V_(SW)−V_(DD) of 1.5 volts with an electrostatic forcein the opposite direction that prevents the disturb of storage cells inthe “OFF” state. Also very important is that NT switching element 4140is in position 4140″ in contact with the storage-plate dielectric, ashort distance from the storage plate, thus maximizing the electricfield that opposes cell disturb. Switch-plate 4140 is far from the NTswitching element 4140 switch greatly reducing the electric field thatpromotes disturb. In addition, the van der Waals force also must beovercome to disturb the cell.

Potential half-select disturb along activated array lines REF1 and BL1includes cells C1,1 to C1, n−1 because REF1 and BL1 have been activated.Storage elements NT1,1 to NT1, n−1 all have corresponding NT switchesconnected to zero volts. To prevent undesired switching of NT switches,RL1 to RLn−1 are set at voltage V_(DD). WL1 to WL n−1 are set at zerovolts, therefore select devices T1,1 to T1,n−1 are open, andswitch-plates (all are connected to select device drain diffusions) arenot connected to reference line REF1. All switch-plates are in contactwith a corresponding NT switch for storage cells in the “ON” state, andall switch plates are only connected to corresponding “floating” draindiffusions for storage cells in the “OFF” state. Floating diffusions areat approximately zero volts because of diffusion leakage currents tosemiconductor substrates. However, some floating source diffusions mayexperience disturb voltage conditions that may cause the source voltage,and therefore the switch-plate voltage, to increase up to 0.6 volts asexplained further below. The information in storage elements NT1,1 toNT1,n−1 in cells C1,1 to C1,n−1 is not disturbed and there is noparasitic current. For cells in both “ON” and “OFF” states there can beno parasitic current because there is no current path. For cells in the“ON” state, the corresponding NT switch and switch-plate are in contactand both are at zero volts. There is a voltage difference of V_(DD)between corresponding NT switch and release-plate. For V_(DD)=1.5 volts,the voltage difference of 1.5 volts is below the minimum V_(NT-TH) =1.7volts for switching. For cells in the “OFF” state, the voltage of theswitch-plate ranges zero to 0.6 volts. The voltage difference betweencorresponding NT switch and switch-plate may be up to 0.6 volts. Thereis also a voltage difference between corresponding NT switch andrelease-plate of V_(DD)=1.5 volts. V_(DD) is less than the minimumV_(NT-TH) of 1.7 volts the “OFF” state remains unchanged.

For all remaining cells of memory array 4700, cells C2,1 to Cm−1,n−1,there is no electrical connection between NT2,1 to NTm−1,n−1switch-plates connected to corresponding select device drain andcorresponding reference lines REF2 to REFm−1 because WL1 to WLn−1 are atzero volts, and select devices T2,1 to Tm−1,n−1 are open. Bit linevoltages for BL2 to BLm−1 are set at V_(DD) and release line voltagesfor RL1 to RLn−1 are set at V_(DD). Therefore, all NT switches are atV_(DD) and all corresponding release-plates are at V_(DD), and thevoltage difference between corresponding NT switches and release-platesis zero. For storage cells in the “ON” state, NT switches are in contactwith corresponding switch-plates and the voltage difference is zero. Forstorage cells in the “OFF” state, switch plate voltages are zero to amaximum of 0.6 volts. The maximum voltage difference between NT switchesand corresponding switch-plates is V_(DD)=1.5 volts, which is below theV_(NT-TH) voltage minimum voltage of 1.7 volts. The “ON” and “OFF”states remain undisturbed.

Non-volatile NT-on-drain NRAM memory array 4700 with bit lines parallelto reference lines is shown in FIG. 40 contains 2^(N)×2^(M) bits, is asubset of non-volatile NRAM memory system 4810 illustrated as memoryarray 4815 in FIG. 42A. NRAM memory system 4810 may be configured tooperate like an industry standard asynchronous SRAM or synchronous SRAMbecause nanotube non-volatile storage cells of memory cell schematic4000 shown in FIG. 39A, in memory array 4700, may be read in anon-destructive readout (NDRO) mode and therefore do not require awrite-back operation after reading, and also may be written (programmed)at CMOS voltage levels (5, 3.3, and 2.5 volts, for example) and atnanosecond and sub-nanosecond switching speeds. NRAM read and writetimes, and cycle times, are determined by array line capacitance, andare not limited by nanotube switching speed. Accordingly, NRAM memorysystem 4810 may be designed with industry standard SRAM timings such aschip-enable, write-enable, output-enable, etc., or may introduce newtimings, for example. Non-volatile NRAM memory system 4810 may bedesigned to introduce advantageous enhanced modes such as a sleep modewith zero current (zero power-power supply set to zero volts),information preservation when power is shut off or lost, enabling rapidsystem recovery and system startup, for example. NRAM memory system 4810circuits are designed to provide the memory array 4700 waveforms 4800shown in FIG. 41.

Figure NRAM memory system 4810 accepts timing inputs 4812, acceptsaddress inputs 4825, and accepts data 4867 from a computer, or providesdata 4867 to a computer using a bidirectional bus sharing input/output(I/O) terminals. Alternatively, inputs and outputs may use separate(unshared) terminals (not shown). Address input (I/P) buffer 4830receives address locations (bits) from a computer system, for example,and latches the addresses. Address I/P buffer 4830 provides word addressbits to word decoder 4840 via address bus 4837; address I/P buffer 4830provides bit addresses to bit decoder 4850 via address bus 4852; andaddress bus transitions provided by bus 4835 are detected by functiongenerating, address transition detecting (ATD), timing waveformgenerator, controller (controller) 4820. Controller 4820 provides timingwaveforms on bus 4839 to word decoder 4840. Word decoder 4840 selectsthe word address location within array 4815. Word address decoder 4840is used to decode both word lines WL and corresponding release lines RL(there is no need for a separate RL decoder) and drives word line (WL)and release line (RL) select logic 4845. Controller 4820 providesfunction and timing inputs on bus 4843 to WL & RL select logic 4845,resulting in NRAM memory system 4810 on-chip WL and RL waveforms forboth write-one, write-zero, read-one, and read-zero operations asillustrated by waveforms 4800′ shown in FIG. 43. FIG. 43 NRAM memorysystem 4810 waveforms 4800′ correspond to memory array 4700 waveforms4800 shown in FIG. 41.

Bit address decoder 4850 is used to decode both bit lines BL andcorresponding reference lines REF (there is no need for a separate REFdecoder) and drive bit line (BL) and reference (REF) select logic 4855via bus 4856. Controller 4820 provides timing waveforms on bus 4854 tobit decoder 4850. Controller 4820 also provides function and timinginputs on bus 4857 to BL & REF select logic 4855. BL & REF select logic4855 uses inputs from bus 4856 and bus 4857 to generate data multiplexerselect bits on bus 4859. The output of BL and REF select logic 4855 onbus 4859 is used to select control data multiplexers using combined datamultiplexers & sense amplifiers/latches (MUXs & SAs) 4860. Controller4820 provides function and timing inputs on bus 4862 to MUXs & SAs 4860,resulting in NRAM memory system 4810 on-chip BL and REF waveforms forboth write-one, write-zero, read-one, and read-zero operations asillustrated by waveforms 4800′ corresponding to memory array 4700waveforms 4800 shown in FIG. 41. MUXs & SAs 4860 are used to write dataprovided by read/write buffer 4865 via bus 4864 in array 4815, and toread data from array 4815 and provide the data to read/write buffer 4865via bus 4864 as illustrated in waveforms 4800′ of FIG. 43A.

Sense amplifier/latch 4900 is illustrated in FIG. 42B. Flip flop 4910,comprising two back-to-back inverters is used to amplify and latch datainputs from array 4815 or from read/write buffer 4865. Transistor 4920connects flip flop 4910 to ground when activated by a positive voltagesupplied by control voltage V_(TIMING) 4980, which is provided bycontroller 4820. Gating transistor 4930 connects a bit line BL to node4965 of flip flop 4910 when activated by a positive voltage. Gatingtransistor 4940 connects reference voltage V_(REF) to flip flop node4975 when activated by a positive voltage. Transistor 4960 connectsvoltage V_(DD) to flip flop 4910 node 4965, transistor 4970 connectsvoltage V_(DD) to flip flop 4910 node 4975, and transistor 4950 ensuresthat small voltage differences are eliminated when transistors 4960 and4970 are activated. Transistors 4950, 4960, and 4970 are activated(turned on) when gate voltage is low (zero, for example).

In operation, V_(TIMING) voltage is at zero volts when sense amplifier4900 is not selected. NFET transistors 4920, 4930, and 4940 are in the“OFF” (non-conducting) state, because gate voltages are at zero volts.PFET transistors 4950, 4960, and 4970 are in the “ON” (conducting) statebecause gate voltages are at zero volts. V_(DD) may be 5, 3.3, or 2.5volts, for example, relative to ground. Flip flop 4910 nodes 4965 and4975 are at V_(DD). If sense amplifier/latch 4900 is selected,V_(TIMING) transitions to V_(DD), NFET transistors 4920, 4930, and 4940turn ON, PFET transistors 4950, 4960, and 4970 are turned “OFF”, andflip flop 4910 is connected to bit line BL and reference voltageV_(REF). V_(REF) is connected to V_(DD) in this example. As illustratedby waveforms BL0 and BL1 of waveforms 4800′, bit line BL is pre-chargedprior to activating a corresponding word line (WL0 in this example). Ifmemory cell 4000 of memory array 4700 (memory system array 4815) storesa “1”, then bit line BL in FIG. 42B corresponds to BL0 in FIG. 43, BL isdischarged by cell 4000, voltage droops below V_(DD), and senseamplifier/latch 4900 detects a “1” state. If cell 4000 of memory array4700 (memory system array 4815) stores a “0”, then bit line BL in FIG.42B corresponds to BL1 in FIG. 43, BL is not discharged by cell 4000,voltage does not droop below V_(DD), and sense amplifier/latch 4900detect a “0” state. The time from sense amplifier select to signaldetection by sense amplifier/latch 4900 is referred to as signaldevelopment time. Sense amplifier/latch 4900 typically requires 100 to200 mV relative to V_(REF) in order to switch. It should be noted thatcell 4000 requires a nanotube “OFF” resistance to “ON” resistance ratioof greater than 10 to 1 for successful operation. A typical bit line BLhas a capacitance value of 250 fF, for example. A typical nanotubestorage device (switch) or dimensions 0.2 by 0.2 um typically has 8nanotube filaments across the suspended region, for example, asillustrated further below. For a combined contact and switch resistanceof 50,000 Ohms per filament, as illustrated further below, the nanotube“ON” resistance of cell 1000 is 6,250 Ohms. For a bit line of 250 fF,the time constant RC=1.6 ns. The sense amplifier signal development timeis less than RC, and for this example, is between 1 and 1.5 nanoseconds.

Non-volatile NRAM memory system 4810 operation may be designed for highspeed cache operation at 5 ns or less access and cycle time, forexample. Non-volatile NRAM memory system 4810 may be designed for lowpower operation at 60 or 70 ns access and cycle time operation, forexample. For low power operation, address I/P buffer 4830 operationrequires 8 ns; controller 4820 operation requires 16 ns; bit decoder4850 operation plus BL & select logic 4855 plus MUXs & SA 4860 operationrequires 12 ns (word decoder 4840 operation plus WL & RL select logic4845 ns require less than 12 ns); array 4815 delay is 8 ns; sensingoperation of sense amplifier latch 4900 requires 8 ns; and read/writebuffer 4865 requires 12 ns, for example. The access time and cycle timeof non-volatile NRAM memory system 4810 is 64 ns. The access time andcycle time may be equal because the NDRO mode of operation of nanotubestorage devices (switches) does not require a write-back operation afteraccess (read).

Method of Making Field Effect Device with Controllable Drain andNT-On-Drain Memory System and Circuits with Parallel Bit and ReferenceArray Lines, and Parallel Word and Release Array Lines

Methods of fabricating NT-on-drain memory arrays are the same as thoseused to fabricate NT-on-source memory arrays. Methods 3000 shown in FIG.22 and associated figures; methods 3004 shown in FIGS. 23 and 23′ andassociated figures; methods 3036 shown in FIG. 26 and associatedfigures; methods 3006 shown in FIGS. 27 and 27′ and associated figures;methods 3008 shown in FIGS. 28 and 28′ and associated figures; andmethods 3144 as illustrated in FIGS. 31A-31D. Conductors,semiconductors, insulators, and nanotubes are formed in the samesequence and are in the same relative position in the structure. Length,widths, thickness dimensions may be different, reflecting differences indesign choices. Also, conductor materials may be different, for example.The function of some electrodes may be different for NT-on-source andNT-on-drain memory arrays. For example, bit array lines and referencelines connect to different electrodes in the nanotube structure as maybe seen further below. Also, connections to source and drain diffusionsare different. For NT-on-source memory arrays, the switch-plate of thenanotube structure is connected to the source diffusion of the FETdevice. However, for NT-on-drain memory arrays, the switch-plate of thenanotube structure is connected to the drain diffusion of the FETdevice, as may be seen further below. Differences between NT-on-sourceand NT-on-drain memory arrays may be seen by comparing figures: 30M′ and44A; FIGS. 30N and 44B; FIGS. 30P and 44C; FIGS. 32A and 45A; FIGS. 32Band 45B; FIGS. 32C and 45C; FIGS. 33A and 46A; FIGS. 33B and 46B; FIGS.33C and 46C; and FIGS. 33D and 46D.

FIG. 44A illustrates cross section A-A′ of array 4725 taken at A-A′ ofthe plan view of array 4725 illustrated in FIG. 44C, and shows FETdevice region 3237′ in the FET length direction, nanotube switchstructure 3233′, interconnections and insulators. FIG. 44B illustratescross section B-B′ of array 4725 taken at B-B′ of plan view of array4725 illustrated in FIG. 44C, and shows a release array line 3205′, abit array line 3119′/3117′ composed of combined conductors 3119′ and3117′, and a word array line 3120′. FIG. 44C illustrates a plan view ofarray 4725 including exemplary cell 4765 region, reference array line3138″ contacting source 3126′ through contact 3140′ to stud 3118A′, tostud 3118′, to contact 3123′ (3118A′, to stud 3118′, to contact 3123′not shown in plan view 4725), and to source 3126′. Bit array line3119′/3117′ is parallel to reference line 3138″, is illustrated in crosssection in FIG. 44B, and contacts a corresponding bit line segment inthe picture frame region formed by combined conductors 3117′ and 3119′,in contact with nanotube 3114′, as shown in FIG. 44A. Release array line3205′ is parallel to word array line 3120′. Release line 3205′ contactsand forms a portion of release electrode 3205′ as illustrated in thenanotube switching region of FIG. 44A. This nanotube switching region isillustrated as nanotube switch structure 3233′ in array 4725 of FIG.44C. In terms of minimum technology feature size, NT-on-drain cell 4765is approximately 12 to 13 F². Nanotube-on-drain array 4725 structuresillustrated in FIGS. 44A, 44B, and 44C correspond to nanotube-on-drainarray 4700 schematic representations illustrated in FIG. 40. Bit line3119′/3117′ structures correspond to any of bit lines BL0 to BLm−1schematic representations; reference line 3138″ structures correspond toany of reference lines REF0 to REFm−1 schematic representations; wordline 3120′ structures correspond to any of word lines WL0 to WLn−1schematic representations; release line 3205′ structures correspond toany of release lines RL0 to RLn−1 schematic representations; sourcecontact 3140′ structures correspond to any of source contacts 4720schematic representations; nanotube switch structures 3233′ correspondto any of NT0,0 to NTm−1,n−1 schematic representations; FET 3237′structures correspond to any of FETs T0,0 to Tm−1, n−1 schematicrepresentations; and exemplary cell 4765 corresponds to any of cellsC0,0 to cell Cm−1,n−1 schematic representations. Switch plate 3106′ isconnected to drain 3124′ through contact 3101′, conductive stud 3122′,and contact 3121′. Drain 3124′ is in substrate 3128′.

It is desirable to enhance array 4725 illustrated in plan view FIG. 44Cby enhancing wireability, for example, or cell density, for example. Inorder to minimize the risk of shorts caused by misaligned via (vertical)connections between conductive layers, it is desirable to coat the topand sides of some selected conductors with an additional insulatinglayer that is not etched when etching the common insulator (commoninsulator SiO₂, for example) between conductive layers as illustrated bystructure 3227 in FIG. 31D. A method such as Method 3144 of coating aconductive layer with an additional insulating layer to form insulatedconductor structure 3227 as described with respect to structuresillustrated in FIGS. 31A-31D may be applied to structures as illustratedfurther below.

It is desirable to enhance the wireability of array 4725 illustrated inFIG. 44C by forming bit array line 3138′″ on the same wiring level andat the same time as reference line 3138″. Bit array line 3138′″ contactsbit line segments 3119′/3117′ composed of combined conductors 3119′ and3117′ as illustrated further below. Line segments 3119′/3117′ are notrequired to span relatively long sub-array regions and may be optimizedfor contact to nanotube layer 3114′.

FIG. 45A illustrates cross section A-A′ of array 4729 taken at A-A′ ofthe plan view of array 4729 illustrated in FIG. 45C, and shows FETdevice region 3237′ in the FET length direction, nanotube switchstructure 3233′, interconnections and insulators. FIG. 45B illustratescross section B-B′ of array 4729 taken at B-B′ of plan view of array4729 illustrated in FIG. 45C, and shows a release array line 3205′ withinsulating layer 3149′ corresponding to insulating layer 3148 instructure 3227 (FIG. 31D), a bit array line 3138′″ in contact withconductor 3119′ of combined conductors 3119′ and 3117′, and a word arrayline 3120′. Bit array line 3138′″ contacts conductor 3119′ throughcontact 3155′, to stud 3157′, through contact 3159′, to conductor 3119′.Insulator 3149′ is used to prevent contact between release lineconductor 3205′ and stud 3157′ in case of stud 3157′ misalignment. FIG.45C illustrates a plan view of array 4729 including exemplary cell 4767region, with reference array line 3138″ contacting source 3126′ throughcontact 3140′ to stud 3118A′, to stud 3118′, to contact 3123′, (stud3118A′, stud 3118′ and contact 3123′ not shown in plan view 4725) and tosource 3126′. Reference array line 3118″ is on the same array wiringlayer and parallel to bit line 3138′″, as is illustrated in plan view ofarray 4729 in FIG. 45C, and bit line 3138′″ contacts a corresponding bitline segment 3119′, as shown in FIG. 45B. Release array line 3205′ isparallel to word array line 3120′. Portions of release line 3205′ act asrelease electrode 3205′ as illustrated in the nanotube switching regionof FIG. 45A. This nanotube switching region is illustrated as nanotubeswitch structure 3233′ in array 4729 of FIG. 45C. In terms of minimumtechnology feature size, NT-on-drain cell 4767 is approximately 12 to 13F². Nanotube-on-drain array 4729 structures illustrated in FIGS. 45A,45B, and 45C correspond to nanotube-on-drain array 4700 schematicrepresentation illustrated in FIG. 40. Bit line 3138′″ structurescorrespond to any of bit lines BL0 to BLm−1 schematic representations;reference line 3138″ structures correspond to any of reference linesREF0 to REFm−1 schematic representations; word line 3120′ structurescorrespond to any of word lines WL0 to WLn−1 schematic representations;release line 3205′ structures correspond to any of release lines RL0 toRLn−1 schematic representations; source contact 3140′ structurescorrespond to any of source contacts 4720 schematic representations;nanotube switch structure 3233′ correspond to any of NT0,0 to NTm−1,n−1schematic representations; and FET 3237′ structures correspond to any ofFET T0,0 to Tm−1, n−1 schematic representations; and exemplary cell 4767corresponds to any of cells C0,0 to cell Cm−1,n−1 schematicrepresentations.

It is desirable to enhance the density of array 4725 illustrated in FIG.44C to reduce the area of each bit in the array, resulting in higherperformance, lower power, and lower cost due to smaller array size.Smaller array size results in the same number of bits occupying areduced silicon chip area, resulting in increased productivity andtherefore lower cost, because there are more chips per wafer. Cell areais decreased by reducing the size of nanotube switch region 3233′,thereby reducing the periodicity between nanotube switch regions 3233′,and correspondingly reducing the spacing between reference lines 3138″and bit lines 3119′/3117′.

FIG. 46A illustrates cross section A-A′ of array 4731 taken at A-A′ ofthe plan view of array 4731 illustrated in FIG. 46D, and shows FETdevice region 3237′ in the FET length direction, reduced area (smaller)nanotube switch structure 3239′, interconnections and insulators. Asmaller picture frame opening is formed in combined conductors 3119′ and3117′ by applying sub-lithographic method 3036 shown in FIG. 26 andcorresponding sub-lithographic structures shown in FIGS. 29D, 29E, and29F during the fabrication of nanotube switch structure 3239′. FIG. 46Billustrates cross section B-B′ of array 4731 taken at B-B′ of plan viewof array 4731 illustrated in FIG. 46D, and shows reference line 3163′comprising conductive layers 3117′ and 3119′, and conformal insulatinglayer 3161′. Conductive layers 3117′ and 3119′ of reference line 3163′are extended to form the picture frame region of nanotube devicestructure 3239′, however, insulating layer 3161′ is not used as part ofthe nanotube switch structure 3239′. FIG. 46B also illustrates releaseline 3205′, and word array line 3120′. FIG. 46C illustrates crosssection C-C′ of array 4731 taken at C-C′ of the plan view of array 4731illustrated in FIG. 46D. Reference line 3138″ is connected to sourcediffusion 3126′ through contact 3140′, to stud 3118A′, and throughcontact 3123′. In order to achieve greater array density, there is asmall spacing between stud 3118A′ and reference line 3163′. Insulator3161′ is used to prevent electrical shorting between stud 3118A′ andreference line 3163′ conductors 3119′ and 3117′ if stud 3118A′ ismisaligned. FIG. 46D illustrates a plan view of array 4731 includingexemplary cell 4769 region, with reference array line 3138″ contactingsource 3126′ as illustrated in FIG. 46C, bit array lines 3163′ parallelto reference line 3138″ but on a different array wiring level (wiringplane). Release array line 3205′ is parallel to word array line 3120′.Release line 3205′ contacts and forms a portion of release electrode3205′ as illustrated in the nanotube switching region of FIG. 46A.Exemplary cell 4769 area (region) is smaller (denser) than exemplarycell 4767 area shown in FIG. 45C and exemplary cell 4765 area shown inFIG. 44C, and therefore corresponding array 4731 is denser (occupiesless area) than corresponding array areas of array 4729 and 4725. Thegreater density (smaller size) of array 4731 results in higherperformance, less power, less use of silicon area, and therefore lowercost as well. In terms of minimum technology feature size, NT-on-draincell 4769 is approximately 10 to 11 F². Nanotube-on-drain array 4731structures illustrated in FIGS. 46A-46D correspond to nanotube-on-drainarray 4700 schematic representation illustrated in FIG. 40. Bit line3163′ structures correspond to any of bit lines BL0 to BLm−1 schematicrepresentations; reference line 3138″ structures correspond to any ofreference lines REF0 to REFm−1 schematic representations; word line3120′ structures correspond to any of word lines WL0 to WLn−1 schematicrepresentations; release line 3205′ structures correspond to any ofrelease lines RL0 to RLn−1 schematic representations; source contact3140′ structures correspond to any of source contacts 4720 schematicrepresentations; nanotube switch structure 3239′ correspond to any ofNT0,0 to NTm−1,n−1 schematic representations; and FET 3237′ structurescorrespond to any of FET T0,0 to Tm−1, n−1 schematic representations;and exemplary cell 4769 corresponds to any of cells C0,0 to cellCm−1,n−1 schematic representations.

Nanotube Random Access Memory Using FEDs with Controllable Gates

Nanotube Random Access Memory (NRAM) Systems and Circuits with Same

Non-volatile field effect devices (FEDs) 180, 200, 220, and 240 withcontrollable gates may be used as cells and interconnected into arraysto form non-volatile nanotube random access memory (NRAM) systems. Thememory cells contain a single element that combines both select andstorage functions, and is referred to as a nanotube transistor (NT-T).By way of example, FED12 240 (FIG. 2L) is used to form a non-volatileNRAM memory cell that is also referred to as a NT-on-Gate memory cell.

NT-On-Gate NRAM Memory Systems and Circuits with Parallel Bit andRelease Lines, and Parallel Word and Reference Lines

NRAM 1NT-T memory arrays are wired using four lines. Word line WL isused to gate combined nanotube/select device NT-T, bit line BL isattached to a shared drain between two adjacent combined nanotube/selectdevices. Reference line REF is attached to a shared source between twoadjacent nanotube/select devices and is grounded. Release line RL isused to control a release-plate of a combined nanotube/select device. Inthis NRAM array configuration, RL is parallel to BL and acts as secondbit line, and REF is parallel to WL, and REF is grounded.

FIG. 47A depicts non-volatile field effect device 240 with memory cellwiring to form NT-on-Gate memory cell 5000 schematic. Word line (WL)5200 connects to terminal T1 of FED12 240; bit line (BL) 5300 connectsto terminal T2 of FED12 240; reference line (REF) 5400 connects toterminal T3 of FED12 240; and release line (RL) 5500 connects toterminal T4 of FED12 240. Memory cell 5000 performs write and readoperations, and stores the information in a non-volatile state. TheFED12 240 layout dimensions and operating voltages are selected tooptimize memory cell 5000. Memory cell 5000 FET combined nanotube/selectdevice controllable gate 5120 corresponds to a combination of gate 242and switch plate 248; drain 5080 corresponds to drain 244; and source5060 corresponds to source 246. Memory cell 5000 combinednanotube/select device control gate and NT switch 5140 corresponds to NTswitch 250; release-plate insulator layer surface 5160 corresponds torelease-plate insulator layer surface 256; and release-plate 5180corresponds to release-plate 254. The interconnections between theelements of memory cell 5000 schematic correspond to the interconnectionof the corresponding interconnections of the elements of FED12 240. BL5300 connects to drain 5080 through contact 5320; REF 5400 connects tosource 5060 through contact 5420; RL 5500 connects to release-plate 5180by contact 5520; WL 5200 interconnects to combined nanotube/selectdevice NT switch control gate 5140 by contact 5220. The non-volatile NTswitching element 5140 may be caused to deflect toward combinedswitch-plate controllable gate 5120 via electrostatic forces to closed(“ON”) position 5140′ to store a logic “1” state as illustrated in FIG.47B. The van der Waals force holds NT switch 5140 in position 5140′. Inposition 5140′ combined switch plate controllable gate 5120 is at thesame voltage as NT switch control gate 5140′. Alternatively, thenon-volatile NT switching element 5140 may be caused to deflect toinsulator surface 5160 on release-plate 5180 via electrostatic forces toopen (“OFF”) position 5140″ to store a logic “0” state as illustrated inFIG. 47C. The van der Waals force holds NT switch 5140 in position5140″. In position 5140″ combined switch-plate controllable gate 5120 isfloating (not connected). When combined switch plate controllable gate5120 is not connected to a terminal, its voltage is determined by theinternal capacitance network as illustrated in FIG. 13A and FIG. 14.Combined switch plate controllable gate 5120 is a combination ofelements 242, 243, and 248 as illustrated in more detail in crosssection 400 in FIG. 14. C_(CH-SUB) is not in the internal devicecapacitance network because bit lines BL and reference lines REF areheld at zero volts during the write operation. When combined switchplate controllable gate 5120 is floating, its voltage V_(G) may becalculated as V_(G)=V_(CG)×C_(1G)/(C_(1G)+C_(G-CH)), where V_(CG) is thevoltage of NT switch control gate 5140. Capacitance C_(1G) is designedfor a desired capacitance ratio relative to device gate capacitanceC_(G-CH). For C_(1G)=0.25×C_(G-CH), V_(G)=0.2×V_(CG). The non-volatileelement switching via electrostatic forces is as depicted by element 250in FIG. 2L. Voltage waveforms 375 used to generate the requiredelectrostatic forces are illustrated in FIG. 15.

NT-on-Gate schematic of memory cell 5000 forms the basis of anon-volatile storage (memory) cell. The device may be switched betweenclosed storage state “1” (switched to position 5140′) and open storagestate “0” (switched to position 5140″), which means the controllablegate may be written to an unlimited number of times as desired. In thisway, the device may be used as a basis for a non-volatile nanotuberandom access memory, which is referred to here as a NRAM array, withthe ‘N’ representing the inclusion of nanotubes. In the NT-on-gatestructure, no dc current flows through the switch-plate to NT fabriccontact, maximizing cyclability (maximum number of ON/OFF cycles).

FIG. 48 represents an NRAM system 5700, according to preferredembodiments of the invention. Under this arrangement, an array is formedwith m×n (only exemplary portion being shown) of non-volatile cellsranging from cell C0,0 to cell C2,2. NRAM system 5700 may be designedusing one large m×n array, or several smaller sub-arrays, where eachsub-array is formed of m×n cells. Non-volatile cell C0,0 contains asingle combined nanotube/select device NT-T0,0. To access selectedcells, the array uses read and write word lines (WL0, WL1, WL2), readbit lines (BL0, BL1, BL2), grounded reference lines (REF0, REF1), andwrite release lines (behave as write bit lines) (RL0, RL1, RL2). The NTswitch control gate of NT-T0,0 is coupled to WL0, the drain of NT-T0,0is coupled to BL0, the source of NT-T0,0 is coupled to REF0, and therelease-plate of NT-T0,0 is coupled to RL0. Connection 5720 connects BL0to shared drain of select devices NT-T0,0 and NT-T0,1. Connection 5740connects REF1 to shared source of select devices NT-T0,1 and NT-T0,2.Word, bit, reference, and release decoders/drivers are explained furtherbelow.

Under preferred embodiments, nanotubes in array 5700 may be in the “ON”“1” state or the “OFF” “0” state. The NRAM memory allows for unlimitedread and write operations per bit location. A write operation includesboth a write function to write a “1” and a release function to write a“0”. By way of example, a write “1” to cell C0,0 and a write “0” to cellC1,0 is described. For a write “1” operation to cell C0,0, combinednanotube/select device NT-T0,0 is activated when WL0 transitions from 0to V_(SW), BL0 has transitioned from V_(DD) to 0 volts prior to WL0activation, RL0 transitions from V_(DD) to switching voltage V_(SW), andREF0 remains at zero. The release-plate and combinedNT-switch-control-gate of the non-volatile combined nanotube/selectdevice NT0,0 are each at V_(SW) resulting in zero electrostatic force(because the voltage difference is zero). The zero BL0 voltage isapplied to the drain, and zero REF0 reference is applied to the sourceof combined nanotube/select device NT-T0,0. The difference in voltagebetween the NT0,0 combined NT-switch-control-gate and the combinedswitch-plate-gate is V_(SW)-0.2 V_(SW), and generates an attractingelectrostatic force. If V_(SW)-0.2 V_(SW) exceeds the nanotube thresholdvoltage V_(NT-TH) (V_(SW)>1.25 V_(NT-TH)), then the nanotube structureswitches to “ON” state or logic “1” state, that is, combinedNT-switch-control-gate and combined switch-plate-gate are electricallyconnected as illustrated in FIG. 47B. If NT-T0,0 was in the “1” state atthe onset of the write “1” cycle, it remains in the “1” state. Thenear-Ohmic connection between combined switch-plate-gate 5120 andcombined NT-switch-control-gate 5140 in position 5140′ represents the“ON” state or “1” state. If the power source is removed, cell C0,0remains in the “ON” state.

For a write “0” (release) operation to cell C1,0, combinednanotube/select device NT-T1,0 is activated when WL0 transitions from 0to V_(SW) and drives combined NT-switch-control-gate to V_(SW). BL1transitioned from V_(DD) to 0 volts prior to WL0 activation, RL1transitions from V_(DD) to zero volts, and REF0 remains at zero volts.If cell C1,0 is in the “1” state, then switching voltage V_(SW) isapplied to the combined switch-plate-gate of NT-T1,0. There is noelectrostatic force between combined switch-plate-gate and combinedNT-switch-control-gate. The non-volatile storage element NT1,0release-plate is at switching voltage zero and the combinedNT-switch-control-gate is at switching voltage V_(SW) generating anattracting electrostatic force. If V_(SW) exceeds the nanotube thresholdvoltage V_(NT-TH), the nanotube structure switches to the “OFF” state orlogic “0” state, that is, the nanotube NT switch and the surface of therelease-plate insulator are in contact as illustrated in FIG. 47C. IfNT-T1,0 was in the “0” state at the onset of the write “0” cycle, itremains in the “0” state. The non-conducting contact between insulatorsurface 5160 on release-plate 5180 and combined NT-switch-control-gate5140 in position 5140″ represents the “OFF” state or “0” state. If thepower source is removed, cell C1,0 remains in the “OFF” state.

An NRAM read operation does not change (destroy) the information in theactivated cells, as it does in a DRAM, for example. Therefore the readoperation in the NRAM is characterized as a non-destructive readout (orNDRO) and does not require a write-back after the read operation hasbeen completed. In this example, Cell C0,0 combined nanotube/selectdevice NT-T0,0 stores a “1” state as illustrated in FIG. 47B. Theelectrical characteristics (source-drain current I_(SD) VS combinedswitch-plate-gate) depend on the stored logic state (“1” state or “0”state). Combined nanotube/select device NT-T0,0 is field effect device(FED) 240 (FIG. 2L) with structure 400 (FIG. 14) used in cell 5000, andmemory array 5700, and exhibits electrical characteristic 385, asillustrated in FIG. 16. FED12 240, NT switch 250 and position 250′,correspond to NT-T0,0 combined NT-switch-control-gate 5140 position5140′. NT-switch-control-gate 5140 is connected to WL0 (whichcorresponds to V_(T1) in FIG. 16). During read, BL0 is precharged toV_(DD) and allowed to float. WL0 transitions from zero to V_(DD) (1.2volts, for example). For a stored logic “1” state, the FET thresholdvoltage V_(FET-TH)=0.4 volts is exceeded by 0.8 volts and BL0 isdischarged. The change in BL0 voltage is detected by a senseamplifier/latch, and a logic “1” state is stored in the latch. BL0, incontact with NT-T0,0 drain 5080, discharges through conductive channelof resistance R_(FET) to the grounded source terminal 5060. The combinedNT-switch-control-gate 5140 contacts combined switch-plate-gate 5120 ofNT-T0,0 through conductor to NT contact resistances R_(C) and NT switchto switch-plate resistance R_(SW). R_(C)+R_(SW) are not in the dischargepath for a NT-on-gate cell.

In this example, cell C1,0 combined nanotube/select device NT-T1,0stores a “0” state as illustrated in FIG. 47C. For a read operation ofcell C1,0, BL1 is precharged high to V_(DD) and allowed to float. WL0 isdriven high to V_(DD) (1.2 volts, for example). WL0 voltage V_(DD) iscapacitively coupled to combined switch-plate-gate 5120 by the internalcapacitance network illustrated in FIG. 14, resulting in an FET-gatevoltage of 0.24 volts (0.2×1.2 volts). Since the FET gate voltage isless than VFET-TH=0.4 volts (electrical characteristic 385, FIG. 16),there is no conductive path between drain 5080 and source 5060, and BL1is not discharged. Sense amplifier/latch circuit (not shown) does notdetect a voltage drop and the latch is set to a logic “0” state.

FIG. 49 illustrates the operational waveforms 5800 of memory array 5700of FIG. 48 during read, write “1”, and write “0” operations for selectedcells, while not disturbing unselected cells (no change to unselectedcell stored logic states). Waveforms 5800 illustrate voltages andtimings to write logic state “1” in cell C0,0, write a logic state “0”in cell C1,0, read cell C0,0, and read cell C1,0. Waveforms 5800 alsoillustrate voltages and timings to prevent disturbing the stored logicstates (logic “1” state and logic “0” state) in partially selected (alsoreferred to as half-selected) cells. Partially selected cells are cellsin memory array 5700 that receive applied voltages because they areconnected to (share) word, bit, reference, and release lines that areactivated as part of the read or write operation to the selected cells.Cells in memory array 5700 tolerate unlimited read and write operationsat each memory cell location.

At the start of the write cycle, BL0 transitions from V_(DD) to zerovolts, connecting the drain to ground. REF0 is at zero volts connectingsource to ground. BL1 and BL2 transition from V_(DD) to zero voltsconnecting all drains to ground. REF1 and REF2 are also at zero voltsconnecting all sources to ground. WL0 transitions from zero to V_(SW),activating select devices NT-T0,0, NT-T1,0, NT-T2,0. Word lines WL1, WL2are not selected and remain at zero volts. RL0 transitions from V_(DD)to switching voltage V_(SW), connecting the release-plates combinednanotube/select device NT-T0,0, NT-T0,1, and NT-T0,2 to V_(SW). RL1transitions from V_(DD) to zero volts, connecting the release-plates ofcombined nanotube/select devices NT-T1,0, NT-T1,1, and NT-T1,2, to zerovolts. RL2 remains at V_(DD), connecting the release-plates of NT-T3,0to V_(DD). REF0 transitions from V_(DD) to switching voltage V_(SW),connecting NT switches of non-volatile storage elements NT0,0, NT1,0 . .. NTm−1,0 to V_(SW). REF1, REF2 . . . REFn−1 remain at V_(DD),connecting NT switches of non-volatile storage elements NT0, 1 toNTn−1,n−1 to V_(DD).

NT-T0,0 may be in “ON” (“1” state) or “OFF” (“0” state) state at thestart of the write cycle. It will be in “ON” state at the end of thewrite cycle. If NT-T0,0 in cell C0,0 is “OFF” (“0” state) it will switchto “ON” (“1” state) since the voltage difference between combinedNT-switch-control-gate and release-plate is zero, and the voltagedifference between combined NT-switch-control-gate and combinedswitch-plate-gate is V_(SW)-0.2 V_(SW) because of the internal devicecapacitance coupling network. Therefore, V_(SW) must be sufficientlyelevated to ensure nanotube switching occurs. For V_(NT-TH) in the rangeof 1.7 to 2.2 volts, V_(SW)-0.2 V_(SW) must exceed 2.2 volts, thereforeV_(SW)>2.75 volts. V_(SW) =2.8 volts is used in this example to ensurean “OFF” to “ON” transition. If NT-T-T0,0 in cell C0,0 is in the “ON”(“1” state), it will remain in the “ON” (“1”) state. NT-T1,0 may be in“ON” (“1” state) or “OFF” (“0” state) state at the start of the writecycle. It will be in “OFF” state at the end of the write cycle. IfNT-T1,0 in cell C1,0 is “ON” (“1” state) it will switch to “OFF” (“0”state) since the voltage difference between combinedNT-switch-control-plate and combined switch-plate-gate is zero, and thevoltage difference between NT-switch-control-plate and release-plate isV_(SW). If NT-T1,0 in cell C1,0 is “OFF” (“0” state), it will remain“OFF” (“0” state). If for example, V_(SW)=2.4 volts, V_(DD)=1.2 volts,and NT switch threshold voltage range is V_(NT-TH) =1.7 to 2.2 volts,then for NT-T0,0 and NT-T1,0 a difference voltage V_(SW)>V_(NT-TH)ensuring write states of “ON” (“1” state) for NT0,0 and “OFF” (“0”state) for NT1,0. Although V_(SW)=2.4 volts ensures an “ON” to “OFF”transition, V_(SW)=2.8 volts is used in this example to ensure “OFF” to“ON” transition.

Cells C0,0 and C1,0 have been selected for the write operation. Allother cells have not been selected, and information in these other cellsmust remain unchanged (undisturbed). Since in an array structure somecells other than selected cells C0,0 and C1,0 in array 5700 willexperience partial selection voltages, often referred to as half-selectvoltages, it is necessary that half-select voltages applied tonon-volatile storage element terminals be sufficiently low (belownanotube activation threshold V_(NT-TH)) to avoid disturbing storedinformation. It is also necessary to avoid parasitic current flow. ForNT-on-Gate memory cells during write operations, all bit lines(connected to drain) and reference lines (connected to sources) are atzero volts, so no disturb currents flow for write “1” or write “0”operations. Release lines are used as write bit lines in NT-on-Gatememory arrays. Potential half-select disturb along activated array linesWL0 (REF0 voltage is zero) includes cell C2,0 because WL0 has beenactivated. Storage element NT-T2,0 will have BL2 at zero volts. Toprevent undesired switching of NT-T2,0, RL2 is set at voltage V_(DD).The information in storage elements NT-T2,0 in cell C2,0 is notdisturbed, and there is no parasitic current. Since corresponding sourceand drain voltages are zero, there can be no parasitic current. If cellC2,0 is in the “ON” state, there is no disturb because the voltagedifference between corresponding combined NT-switch-control-gates andcorresponding release-plate is V_(SW)−V_(DD)=1.2 volts, when V_(SW) =2.8volts and V_(DD)=1.2 volts. Since this voltage difference of 1.6 voltsis less than the minimum nanotube threshold voltage V_(NT-TH) of 1.7volts, no switching takes place. If C2,0 is in the “OFF” state, then thedifference in voltage between combined NT-switch-control-gate andcombined switch-pate-gate is V_(SW)-0.2 V_(SW) =2.2 volts. However, forNT-T0,1 and NT-T0,2 release-plate at V_(SW) =2.8 volts, correspondingcombined NT-switch-control-gate at V_(DD), and corresponding combinedswitch-plate-gate at V_(DD) (for ON) and 0.2 V_(DD) (equals 0.24 voltsfor OFF), and with minimum V_(NT-TH) =1.7 volts, no disturb occurs.

Potential half-select disturb along activated array lines RL0 and BL0includes cells C0,1 and C0,2 because RL0 and BL0 have been activated.RL0 drives combined nanotube/select device NT-T0,1 and NT-T0,2release-plates to switching voltage V_(SW), and WL1 and WL2 drivecorresponding combined NT-switch-control-gates to V_(DD). Combinednanotube/select devices NT-T0,1 and NT-T0,2 have correspondingrelease-plates at V_(SW) and combined NT-switch-control-gates at V_(DD).For a stored “1” (“ON”) state, combined switch-plate-gate is at V_(DD).The voltage difference V_(SW)−V_(DD)=1.6 volts, less than minimumV_(NT-TH) =1.7 volts, and the stored “1” (“ON”) state is not disturbed.For a stored “0” (“OF”F) state, combined switch-plate-gate is at 0.2V_(DD) due to internal device capacitance network coupling. Theelectrostatic attractive force due to V_(DD)−0.2 V_(DD)=1 volt andcannot overcome a much stronger electrostatic force due to theV_(SW)−V_(DD)=1.6 volts and close proximity between release-plate andcorresponding combined NT-switch-control-gate, and the “0” (“OFF”) stateis not disturbed.

Potential half-select disturb along activated array lines RL1 and BL1includes cells C1,1 and C1,2 because RL1 and BL1 have been activated.RL1 drives combined nanotube/select device NT-T0,1 and NT-T0,2release-plates to zero volts, and WL1 and WL2 drive correspondingcombined NT-switch-control-gates to V_(DD). Combined nanotube/selectdevices NT-T1,1 and NT-T1,2 have corresponding release-plates at zerovolts and combined NT-switch-control-gates at V_(DD). For a stored “1”(“ON”) state, combined switch-plate-gate is at V_(DD). The voltagedifference V_(DD)-0=1.2 volts, less than minimum V_(NT-TH) =1.7 volts,and the stored “1” (“ON”) state is not disturbed. For a stored “0”(“OFF”) state, combined switch-plate-gate is at 0.2 V_(DD) due tointernal device capacitance network coupling. The electrostaticattractive force due to V_(DD)-0.2 V_(DD)=1 volt causes acounter-balancing electrostatic, and the “0” (“OFF”) state is notdisturbed.

For all remaining memory array 5700 cells C2,1 and C2,2 BL2 and REL 1and REL2 voltages are zero, so no parasitic currents can flow betweendrains and sources of combined nanotube/select devices NT-T2,1 andNT-T2,2. RL2 drives combined nanotube/select device NT-T2,1 and NT-T2,2release-plates to V_(DD), and WL1 and WL2 drive corresponding combinedNT-switch-control-gates to V_(DD). Combined nanotube/select devicesNT-T2,1 and NT-T2,2 have corresponding release-plates at V_(DD) andcorresponding combined NT-switch-control-gates at V_(DD), for a voltagedifference of zero. For a stored “1” (“ON”) state, combinedswitch-plate-gate is at V_(DD), all voltage differences are zero, andthe stored “1” (“ON”) state is not disturbed. For a stored “0” (“OFF”)state, combined switch-plate-gate is at 0.2 V_(DD) due to internaldevice capacitance network coupling. The electrostatic attractive forcedue to V_(DD)−0.2 V_(DD)=1 volt is much less than V_(NT-TH) =1.7 volts,and the “0” (“OFF”) state is not disturbed.

Non-volatile NT-on-gate NRAM memory array 5700 with bit lines parallelto release lines is shown in FIG. 48 contains 2^(N)×2 ^(M) bits, is asubset of non-volatile NRAM memory system 5810 illustrated as memoryarray 5815 in FIG. 50A. NRAM memory system 5810 may be configured tooperate like an industry standard asynchronous SRAM or synchronous SRAMbecause nanotube non-volatile storage cells 5000 shown in FIG. 47A, inmemory array 5700, may be read in a non-destructive readout (NDRO) modeand therefore do not require a write-back operation after reading, andalso may be written (programmed) at CMOS voltage levels (5, 3.3, and 2.5volts, for example) and at nanosecond and sub-nanosecond switchingspeeds. NRAM read and write times, and cycle times, are determined byarray line capacitance, and are not limited by nanotube switching speed.Accordingly, NRAM memory system 5810 may be designed with industrystandard SRAM timings such as chip-enable, write-enable, output-enable,etc., or may introduce new timings, for example. Non-volatile NRAMmemory system 5810 may be designed to introduce advantageous enhancedmodes such as a sleep mode with zero current (zero power-power supplyset to zero volts), information preservation when power is shut off orlost, enabling rapid system recovery and system startup, for example.NRAM memory system 5810 circuits are designed to provide the memoryarray 5700 waveforms 5800 shown in FIG. 49.

NRAM memory system 5810 accepts timing inputs 5812, accepts addressinputs 5825, and accepts data 5867 from a computer, or provides data5867 to a computer using a bidirectional bus sharing input/output (I/O)terminals. Alternatively, inputs and outputs may use separate (unshared)terminals (not shown). Address input (I/P) buffer 5830 receives addresslocations (bits) from a computer system, for example, and latches theaddresses. Address I/P buffer 5830 provides word address bits to worddecoder 5840 via address bus 5837; address I/P buffer 5830 provides bitaddresses to bit decoder 5850 via address bus 5852; and address bustransitions provided by bus 5835 are detected by function generating,address transition detecting (ADT), timing waveform generator,controller (controller) 5820. Controller 5820 provides timing waveformson bus 5839 to word decoder 5840. Word decoder 5840 selects the wordaddress location within array 5815 and provides WL waveforms for bothwrite-one, write-zero, read-one, and read-zero operations as illustratedby waveforms 5800′ shown in FIG. 51. FIG. 51 NRAM memory system 5810waveforms 5800′ correspond to memory array 5700 waveforms 5800 shown inFIG. 49. Reference lines REF are grounded.

Bit address decoder 5850 is used to decode both bit lines BL andcorresponding release lines RL (there is no need for a separate RLdecoder) and drive bit line (BL) and release (RL) select logic 5855 viabus 5856. Controller 5820 provides timing waveforms on bus 5854 to bitdecoder 5850. Controller 5820 also provides function and timing inputson bus 5857 to BL & RL select logic 5855. BL & RL select logic 5855 usesinputs from bus 5856 and bus 5857 to generate data multiplexer selectbits on bus 5859. The output of BL and RL select logic 5855 on bus 5859is used to select control data multiplexers using combined datamultiplexers & sense amplifiers/latches (MUXs & SAs) 5860. Controller5820 provides function and timing inputs on bus 5862 to MUXs & SAs 5860,resulting in NRAM memory system 5810 on-chip BL and RL waveforms forboth write-one, write-zero, read-one, and read-zero operations asillustrated by waveforms 5800′ corresponding to memory array 5700waveforms 5800 shown in FIG. 49. MUXs & SAs 5860 are used to write dataprovided by read/write buffer 5865 via bus 5864 in array 5815, and toread data from array 5815 and provide the data to read/write buffer 5865via bus 5864 as illustrated in waveforms 5800′, of FIG. 51.

Sense amplifier/latch 5900 is illustrated in FIG. 50B. Flip flop 5910,comprising two back-to-back inverters is used to amplify and latch datainputs from array 5815 or from read/write buffer 5865. Transistor 5920connects flip flop 5910 to ground when activated by a positive voltagesupplied by control voltage V_(TIMING) 5980, which is provided bycontroller 5820. Gating transistor 5930 connects a bit line BL to node5965 of flip flop 5910 when activated by a positive voltage. Gatingtransistor 5940 connects reference voltage V_(REF) to flip flop node5975 when activated by a positive voltage. Transistor 5960 connectsvoltage V_(DD) to flip flop 5910 node 5965, transistor 5970 connectsvoltage V_(DD) to flip flop 5910 node 5975, and transistor 5950 ensuresthat small voltage differences are eliminated when transistors 5960 and5970 are activated. Transistors 5950, 5960, and 5970 are activated(turned on) when gate voltage is low (zero, for example).

In operation, V_(TIMING) voltage is at zero volts when sense amplifier5900 is not selected. NFET transistors 5920, 5930, and 5940 are in the“OFF” (non-conducting) state, because gate voltages are at zero volts.PFET transistors 5950, 5960, and 5970 are in the “ON” (conducting) statebecause gate voltages are at zero volts. V_(DD) may be 5, 3.3, or 2.5volts, for example, relative to ground. Flip flop 5910 nodes 5965 and5975 are at V_(DD). If sense amplifier/latch 5900 is selected,V_(TIMING) transitions to V_(DD), NFET transistors 5920, 5930, and 5940turn “ON”, PFET transistors 5950, 5960, and 5970 are turned “OFF”, andflip flop 5910 is connected to bit line BL and reference voltageV_(REF). V_(REF) is connected to V_(DD) in this example. As illustratedby waveforms BL0 and BL1 of waveforms 5800′, bit line BL is pre-chargedprior to activating a corresponding word line (WL0 in this example). Ifcell 5000 of memory array 5700 (memory system array 5815) stores a “1”,then bit line BL in FIG. 50B corresponds to BL0 in FIG. 51, BL isdischarged by cell 5000, voltage droops below V_(DD), and senseamplifier/latch 5900 detects a “1” state. If cell 5000 of memory array5700 (memory system array 5815) stores a “0”, then bit line BL in FIG.50B corresponds to BL1 in FIG. 51, BL is not discharged by cell 5000,voltage does not droop below V_(DD), and sense amplifier/latch 5900detect a “0” state. The time from sense amplifier select to signaldetection by sense amplifier/latch 5900 is referred to as signaldevelopment time. Sense amplifier/latch 5900 typically requires 100 to200 mV relative to V_(REF) in order to switch. It should be noted thatcell 5000 requires a nanotube “OFF” resistance to “ON” resistance ratioof greater than 10 to 1 for successful operation. A typical bit line BLhas a capacitance value of 250 fF, for example. A typical nanotubestorage device (switch) or dimensions 0.2 by 0.2 um typically has 8nanotube filaments across the suspended region, for example, asillustrated further below. For a combined contact and switch resistanceof 50,000 Ohms per filament, as illustrated further below, the nanotube“ON” resistance of cell 5000 is 6,250 Ohms. For a bit line of 250 fF,the time constant RC=1.6 ns. The sense amplifier signal development timeis less than RC, and for this example, is between 1 and 1.5 nanoseconds.

Non-volatile NRAM memory system 5810 operation may be designed for highspeed cache operation at 5 ns or less access and cycle time, forexample. Non-volatile NRAM memory system 5810 may be designed for lowpower operation at 60 or 70 ns access and cycle time operation, forexample. For low power operation, address I/P buffer 5830 operationrequires 8 ns; controller 5820 operation requires 16 ns; bit decoder5850 operation plus BL & select logic 5855 plus MUXs & SA 5860 operationrequires 12 ns (word decoder 5840 operation requires less than 12 ns)array 5815 delay is 8 ns; operation of sense amplifier 5900 requires 8ns; and read/write buffer 5865 requires 12 ns, for example. The accesstime and cycle time of non-volatile NRAM memory system 5810 is 64 ns.The access time and cycle time may be equal because the NDRO mode ofoperation of nanotube storage devices (switches) does not require awrite-back operation after access (read).

Method of Making Field Effect Device with Controllable Gate andNT-On-Gate Memory System and Circuits with Parallel Bit and ReleaseArray Lines and Parallel Word and Reference Array Lines

NT-on-Gate memory cells are based on FED12 240 devices shown in FIG. 2L.Switch 250 may be displaced to contact a switch-plate 248, which isconnected to a controllable gate 242. Switch 250 may be displaced tocontact release-plate dielectric surface 256 on release-plate 254, whichis connected to terminal T4. FED12 240 devices are interconnected tofabricate a NT-on-gate memory array.

FIG. 22 describes a basic method 3000 of manufacturing preferredembodiments of the invention. In general, preferred methods first form3002 a base structure including field effect device similar to a MOSFET,having drain, source, gate nodes, and conductive studs on source, drain,and gate structures for connecting to additional layers above the MOSFETdevice used to fabricate the nanotube switch. Base structure 3102′ shownin FIG. 24A-24E is used when fabricating NT-on-source memory arrays. Thenanotube switch structure is fabricated on planar surface 3104′. Basestructure 3102′″ shown in FIG. 44A is used when fabricating NT-on-drainmemory arrays. The nanotube switch structure is fabricated on planarsurface 3104′″ using the same methods as used to fabricate theNT-on-source memory array. Base structure 6002 shown in FIG. 52B is usedwhen fabricating NT-on-gate memory arrays. The nanotube switch structureis fabricated on planar surface 6004 using the same methods as used tofabricate the NT-on-source and NT-on-drain memory arrays.

Preferred methods first form 3002 base structure 6002 in two steps.First, MOSFET devices are formed using well known industry methodshaving a polysilicon (or metallic) gate 6120, for example, and sourcediffusion 6124 and drain diffusion 6126 in semiconductor substrate 6128,for example, as illustrated in FIG. 52A. Then studs (tungsten, aluminum,etc., for example) are embedded in dielectric 6116 (SiO₂, for example)using well known industry methods, and the surface is planarized. Stud6129 contacts source 6124 at contact 6121, stud 6118′ contacts drain6126 at contact 6123, and stud 6122′ contacts gate 6120 at contact 6125.

Next, reference array line (REF) 6163 is deposited and patterned usingstandard semiconductor process techniques, and contact stud 6129 atcontact 6101 as illustrated in FIG. 52B. Standard semiconductor processmethods insulate reference array line 6163. Next, standard semiconductorprocesses are used to open via holes to studs 6122′ and 6118′, fill viaholes with metal, planarize, and pattern. Standard semiconductorprocesses deposit and insulator, such as SiO2, for example, andplanarize. Stud 6122′ and stud 6118′ are thus extended in length abovethe top of reference array line 6163 to surface 6004 of base structure6002 as illustrated in FIGS. 52A and 52B.

Once base structure 6002 is defined, then methods of fabricatingNT-on-gate memory arrays are the same as those used to fabricateNT-on-source memory arrays. Preferred methods 3004 shown in FIGS. 23 and23′ and associated figures; methods 3036 shown in FIG. 26 and associatedfigures; methods 3006 shown in FIGS. 27 and 27′ and associated figures;methods 3008 shown in FIGS. 28 and 28′ and associated figures; andmethods 3144 as illustrated in FIGS. 31A-31D. Conductors,semiconductors, insulators, and nanotubes are formed in the samesequence and are in the same relative position in the structure. Length,widths, thickness dimensions may be different, reflecting differences indesign choices. Also, conductor materials may be different, for example.The function of some electrodes may be different for NT-on-source andNT-on-gate memory arrays. For example, reference array lines areconnected to source diffusions. Alternatively, source diffusions may beused as reference array lines without a separate conductor layer,however, performance may be slower. Word array lines connect todifferent electrodes in the nanotube structure, the nanotube switch forexample, as may be seen further below. For NT-on-gate memory arrays, theswitch-plate of the nanotube structure is connected to the gatediffusion of the FET device. However, for NT-on-drain memory arrays, theswitch-plate of the nanotube structure is connected to the draindiffusion of the FET device, and for NT-on-source memory arrays, theswitch-plate of the nanotube structure is connected to the sourcediffusion of the FET device, as may be seen further below.

The nanotube switch region of the NT-on-gate cross section illustratedin FIG. 52C corresponds to the nanotube switch region of theNT-on-source cross section illustrated in FIG. 30F′ after the formationof first and second gap regions, sealing of the fluid communicationpaths, and planarizing as discussed with respect to FIG. 30J′.Switch-plate 6106 is in electrical communication with FET gate 6120 bymeans of contact 6127, stud 6122, and contact 6125, (see FIGS. 52A and52B). Insulator 6108 is between switch-plate 6106 and nanotube fabric6114. Conductors 6117 and 6119 form composite conductor 6325, with anopening to form a picture frame opening used to suspend nanotube fabric6114. Gap region 6209 is between the top of conductor 6119 and insulator6203 on the bottom of release-plate 6205, in the combinednanotube/device switching region 6301. Reference array line 6263 is inelectrical contact with source 6124 by means of contact 6101 and stud6129. Insulator 6116, with a planarized surface, encapsulates thenanotube switch structure and array wiring.

FIG. 52D illustrates the structure of FIG. 52C with extended stud 6118Acontacting stud 6118 and reaching the planarized top surface ofinsulator 6116. Extended stud 6118A is surrounded by insulator 6310 toensure that stud 6118A does not connect to regions of combinednanotube/device structure 6301 if stud 6118A is misaligned. Insulator6310 is a conformal insulating layer deposited in the via hole reachingthe top surface of stud 6118. A directional etch (RIE, for example)removes the insulator region in contact with 6118. The via hole isfilled with a conductor, and the top surface is planarized asillustrated in FIG. 52D. Bit line 6138 is deposited and patternedforming structure 6000 illustrated in FIG. 52E. Differences betweenNT-on-source and NT-on-gate memory arrays may be seen by comparing FIGS.33A and 52E; FIGS. 33B and 52F; FIGS. 33C and 52G; and FIGS. 33D and52H.

FIG. 52E illustrates cross section A-A′ of array 6000 taken at A-A′ ofthe plan view of array 6000 illustrated in FIG. 52H, and shows reducedarea (smaller) combined nanotube/device switch region 6301 in the FETlength, interconnections and insulators. A smaller picture frame openingis formed in combined conductors 6119 and 6117 by applyingsub-lithographic method 3036 shown in FIG. 26 and correspondingsub-lithographic structures shown in FIGS. 29D, 29E, and 29F during thefabrication of combined nanotube/device switch structure 6301. FIG. 52Fillustrates cross section B-B′ of array 6000 taken at B-B′ of plan viewof array 6000 illustrated in FIG. 52H, and shows word line 6325comprising conductive layers 3117 and 3119. Conductive layers 6117 and6119 of word line 6325 are extended to form the picture frame region ofnanotube device structure. FIG. 52F also illustrates release line 6205,and reference array line 6263. FIG. 52G illustrates cross section C-C′of array 6000 taken at C-C′ of the plan view of array 6000 illustratedin FIG. 52H. Bit line 6138 is connected to drain diffusion 6126 throughcontact 6140, to stud 6118A, to stud 6118, and through contact 6123. Inorder to achieve greater array density, there is a small spacing betweenstud 6118A and release line 6205. Insulator 6310 is used to preventelectrical shorting between stud 6118A and release line 6205 if stud6118A is misaligned. FIG. 52H illustrates a plan view of array 6000including exemplary cell 6400 region, with bit array line 6138contacting drain 6126 as illustrated in FIG. 52G, release array line6205 parallel to bit line 6138 but on a different array wiring level(wiring plane). Reference array line 6263 is parallel to word array line6325. Release line 6205 contacts and forms a portion of releaseelectrode 6205 as illustrated in the nanotube switching region of FIG.52E. NT-on-gate exemplary cell 6400 area (region) is smaller (denser)than corresponding exemplary nanotube-on-source cell 3169 area shown inFIG. 33D and corresponding NT-on-drain exemplary cell 4769 area shown inFIG. 46D, and therefore corresponding array 6000 is denser (occupiesless area) than corresponding array areas of array 3231 and 4731. Thegreater density of array 6000 results in higher performance, less power,less use of silicon area, and therefore lower cost as well. In terms ofminimum technology feature size, NT-on-gate cell 6400 is approximately 7to 9 F². Nanotube-on-gate array 6000 structures illustrated in FIGS.52E-52H correspond to nanotube-on-gate array 5700 schematicrepresentation illustrated in FIG. 48. Bit line 6138 structurescorrespond to any of bit lines BL0 to BLm−1 schematic representations;reference line 6263 structures correspond to any of reference lines REF0to REFm−1 schematic representations; word line 6325 structurescorrespond to any of word lines WL0 to WLn−1 schematic representations;release line 6205 structures correspond to any of release lines RL0 toRLn−1 schematic representations; source contact 6140 structurescorrespond to any of source contacts 5740 schematic representations;combined nanotube/device switch structure 6301 correspond to any ofcombined nanotube/select devices NT0,0 to NTm−1,n−1 schematicrepresentations; and exemplary cell 6400 corresponds to any of cellsC0,0 to cell Cm−1,n−1 schematic representations.

Nanotube Random Access Memory Using More than One FED Per Cell withControllable Sources

Nanotube Random Access Memory (NRAM) Systems and Circuits, with Same

Non-volatile field effect devices (FEDs) 20, 40, 60, and 80 withcontrollable sources may be used as the cells of one FED device andinterconnected into arrays to form non-volatile nanotube random accessmemory (NRAM) systems as illustrated further above. In operation, cellswith a single FED require a partial (or half-select) mode of operationas illustrated by array 1700 shown in FIG. 18 and correspondingwaveforms 1800 shown in FIG. 19, for example. Memory cells that containtwo select device (transistors) T and T′, and two non-volatile nanotubestorage element NT and NT′ (2T/2NT cells) use full cell selectoperation, and do not require nanotube partial (or half-select)operation. By using full select operation, nanotube electricalcharacteristics such as threshold voltage and resistance may be operatedover a wider range of values, and sensing may be faster because true andcomplement bit lines BL and BLb, respectively, are used in adifferential signal mode. Cell size (area), however, is increasedsignificantly (by more than two times single FED cell area). By way ofexample, two FED4 80 (FIG. 2D) devices are used to form a non-volatileNRAM memory cell that is also referred to as a two device NT-on-Sourcememory cell. Two FED device NT-on-drain cells using non-volatile fieldeffect devices (FEDs) 100, 120, 140, and 180 and two FED deviceNT-on-gate cells using non-volatile field effect devices (FEDs) 180,200, 220, and 240 may also be used (not shown). More than twonon-volatile field effect devices (FEDs) per cell may be used foradditional performance advantages, for example. Four devices, forexample, with separate (non-shared) read and write cell terminals may beused (not shown), however, cell size (area) is increased significantly(by more than four times single FED cells).

Two FED Device NT-On-Source NRAM Memory Systems and Circuits withParallel Bit and Reference Lines, and Parallel Word and Release Lines

NRAM 2T/2NT memory arrays are wired using three sets of unique arraylines (a set of word lines and two sets of complementary bit lines), andone group of shared reference lines all at the same voltage, zero(ground) in this example. Read and write word line WL is used to gateselect devices T and T′, read and write bit line BL is attached to ashared drain between two adjacent select T devices, and read and writecomplementary bit line BLb (or BL′) is attached to a shared drainbetween two adjacent select T′ devices. Reference line REF is used tocontrol the NT switch voltage of storage element NT and NT′ and isgrounded (zero volts). Voltages applied to the switch-plates andrelease-plates of NT and NT′ are controlled by transistor T and T′sources. True bit array lines BL and complementary bit array lines BLb(bit line bar) are parallel to each other, and orthogonal to array wordlines WL. Reference array lines may be parallel to bit lines or to wordlines, or alternatively, a conductive layer (plane) may be used.

FIG. 53A depicts two controlled source non-volatile field effectdevices, FED4 80 (FIG. 2D) and memory cell wiring to form non-volatile2T/2NT NT-on-Source memory cell 7000 schematic. A first FED device andassociated elements and nodes is referred to as FED4 device 80, and asecond FED device and associated elements and nodes is referred to asFED4′ device 80′. Memory cell 7000 is configured as two controlledsource FED devices sharing a common gate input provided by a common wordline WL, with two independent drain connections each connected tocomplementary bit lines. Word line (WL) 7200 connects to terminal T1 ofFED4 80 and also to terminal T1′ of FED4 80′; bit line (BL) 7300connects to terminal T2 of FED4 80 and complementary bit line (BLb)7300′ connects to terminal T2′ of FED4 80′; reference line (REF) 7400connects to terminal T3 of FED4 80 and terminal T3′ of FED4 80′. Memorycell 7000 performs write and read operations, and stores the informationin a non-volatile state. The FED4 80 and FED4 80′ layout dimensions andoperating voltages are selected to optimize memory cell 7000. Memorycell 7000 FET select device (T) gate 7040 and select device (T′) gate7040′ correspond to gate 82; drains 7060 and 7060′ correspond to drain84; and controllable sources 7080 and 7080′ correspond to controllablesource 86. Memory cell 7000 nanotube (NT) switch-plates 7120 and 7120′correspond to switch-plate 88; NT switches 1140 and 1140′ correspond toNT switch 90; release-plate insulator layer surfaces 7184 and 7184′correspond to release-plate insulator layer surface 96; andrelease-plates 7180 and 7180′ correspond to release-plate 94. Theinterconnections between the elements of memory cell 7000 schematiccorrespond to the interconnection of the corresponding interconnectionsof the elements of FED4 80. BL 7300 connects to drain 7060 throughcontact 7320 and BLb 7300′ connects to drain 7060′ through contact7320′; REF 7400 connects to NT switch 7140 and in parallel to NT′ switch7141′ through connector 7145; WL 7200 interconnects to gate 7040 bycontact 7220 and interconnects to gate 7040′ by contact 7220′.Alternatively, WL 7200 may form and interconnect gates 1040 and 1040′,requiring no separate contacts, as shown further below. Transistor Tsource 7080 connects to nanotube NT switch-plate 7120 and connects tonanotube NT′ release-plate 7180′ through connector 7190. Transistor T′source 7080′ connects to nanotube NT release-plate 7180 and connects tonanotube NT′ switch-plate 7120′ through connector 7190′.

In operation, the non-volatile NT switching element 7140 may be causedto deflect to switch-plate surface 7120 via electrostatic forces toclosed (“ON”) position 7140S1, and non-volatile NT′ switching element7140′ may be caused to deflect to insulator 7184′ on release-plate 7180′via electrostatic forces to open (“OFF”) position 7140′S2, to store alogic “1” state as illustrated in FIG. 53B. That is, a logic “1” statefor the two FED cell 7000 consists of NT in closed (“ON”) position7140S1 and NT′ in open (“OFF”) position 7140′S2, as illustrated in FIG.53B. The van der Waals forces hold nanotube switches 7140 and 7140′ inpositions 7140S1 and 7140′S2, respectively. Alternatively, thenon-volatile NT switching element 7140-may be caused to deflect towardrelease-plate 7180 via electrostatic forces to open (“OFF”) position7140S2, and non-volatile switching element 1140′ may be caused todeflect toward switch-plate 7120′ to closed (“ON”) position 7140′S1, tostore a logic “0” state as illustrated in FIG. 53C. That is, a logic “0”state for the two FED cell 7000 consists of NT in open (“OFF”) position7140S2 and NT′ in closed (“ON”) position 7140′S1, as illustrated in FIG.53C. The van der Waals forces hold nanotube switches 1140 and 1140′ inpositions 7140S2 and 7140′S1, respectively. The non-volatile elementswitching via electrostatic forces is as depicted by element 90 in FIG.2D with voltage waveforms 311 used to generate the requiredelectrostatic forces illustrated in FIG. 4.

NT-on-Source schematic 7000 forms the basis of a non-volatile 2T/2NTstorage (memory) cell. The non-volatile 2T/2NT memory cell may beswitched between storage state “1” and storage state “0”, which meansthe controllable sources may be written to an unlimited number of timesas desired, and that the memory cell will retain stored information ifpower is removed (or lost). In this way, the device may be used as abasis for a non-volatile nanotube random access memory, which isreferred to here as a NRAM array, with the ‘N’ representing theinclusion of nanotubes.

FIG. 54 represents an NRAM array system 7700, according to preferredembodiments of the invention. Under this arrangement, an m×n cell arrayis formed, with only an exemplary 3×2 potion of non-volatile cellsranging from cell C0,0 to cell C2,1 being shown. To access selectedcells, array 7700 uses read and write word lines (WL0 and WL1), read andwrite bit lines (BL0, BL1, and BL2) and read and write complementary bitlines (BLb0, BLb1, and BLb2. Reference lines REF are all at the samereference voltage, zero volts in this example. Non-volatile cell C0,0includes select devices T0,0 and T′0,0, and non-volatile storageelements NT0,0 and NT′0,0. The gates of T0,0 and T′0,0 are coupled toWL0, the drain of T0,0 is coupled to BL0, and the drain of T′0,0 iscoupled to BLb0. NT0,0 is the non-volatilely switchable storage elementwhere the NT0,0 switch-plate is coupled to the source of T0,0, theswitching NT element is coupled to REF, and the release-plate is coupledto the source of T′0,0. NT′0,0 is the non-volatilely switchable storageelement where the NT′0,0 switch-plate is coupled to the source of T′0,0,the switching NT element is coupled to REF, and the release-plate iscoupled to the source of T0,0. Word and bit decoders/drivers, senseamplifiers, and controller circuits are explained further below.

Under preferred embodiments, nanotubes in array 7700 may be in the “ON”,“1” state or the “OFF”, “0” state. The NRAM memory allows for unlimitedread and write operations per bit location. A write operation includesboth a write function to write a “1” and a release function to write a“0”. By way of example, a write “1” to cell C0,0 and a write “0” to cellC1,0 is described. For a write “1” operation to cell C0,0, selectdevices T0,0 and T′0,0 are activated when WL0 transitions from 0 toV_(SW)+V_(FET-TH), after BL0 has transitioned to V_(SW) volts and afterBL0 b has transitioned to zero volts. REF voltage is at zero volts. TheNT0,0 switch element release-plate is at zero volts, the switch-plate isat V_(SW) volts, and the NT switch is at zero volts. The NT′0,0 switchelement release-plate is at V_(SW) volts, the switch-plate is at zerovolts, and the NT′ switch is at zero volts. The BL0 V_(SW) voltage isapplied to the switch-plate of non-volatile storage element NT0,0 andthe release-plate of non-volatile storage element NT′0,0 by thecontrolled source of select device T0,0. The zero BL0 b voltage isapplied to the release-plate of non-volatile storage element NT0,0, andto the switch-plate of non-volatile storage element NT′0,0, by thecontrolled source of select device T′0,0. The difference in voltagebetween the NT0,0 switch-plate and NT switch is V_(SW) and generates anattracting electrostatic force. The voltage difference between therelease-plate and NT switch is zero so there is no electrostatic force.The difference in voltage between NT′0,0 release-plate and NT′ switch isV_(SW) and generates an attracting electrostatic force. The voltagedifference between the switch-plate and NT′ switch is zero so there isno electrostatic force. If V_(SW) exceeds the nanotube threshold voltageV_(NT-TH), the nanotube structure switches to “ON” state or logic “1”state, that is, the nanotube NT switch and switch-plate of non-volatilestorage element NT0,0 are electrically connected as illustrated in FIG.53B, and the nanotube NT switch and release-plate dielectric ofnon-volatile storage element NT′0,0 are in contact as illustrated inFIG. 53B. The near-Ohmic connection between switch-plate 7120 and NTswitch 7140 in position 7140S1 represents the “ON” state or “1” state.If the power source is removed, cell C0,0 remains in the “ON” state.

For a write “0” operation to cell C1,0, select devices T1,0 and T′1,0are activated when WL0 transitions from 0 to V_(SW)+V_(FET-TH). afterBL1 has transitioned to zero volts and after BL1 b has transitioned toV_(SW) volts. REF voltage is at zero volts. The NT1,0 switch elementrelease-plate is at V_(SW) volts, the switch-plate is at zero volts, andthe NT switch is at zero volts. The NT′1,0 switch element release-plateis at zero volts, the switch-plate is at V_(SW) volts, and the NT′switch is at zero volts. The BL1 zero volts is applied to theswitch-plate of non-volatile storage element NT1,0 and the release-plateof non-volatile storage element NT′1,0 by the controlled source ofselect device T1,0. The V_(SW) BL0 b voltage is applied to therelease-plate of non-volatile storage element NT1,0, and to theswitch-plate of non-volatile storage element NT′1,0, by the controlledsource of select device T′1,0. The difference in voltage between theNT1,0 switch-plate and NT switch is zero and generates no electrostaticforce. The voltage difference between the release-plate and NT switch isV_(SW) so there is an attracting electrostatic force. The difference involtage between NT′1,0 release-plate and NT′ switch is zero volts andgenerates no electrostatic force. The voltage difference between theswitch-plate and NT′ switch is V_(SW) so there is an attractingelectrostatic force. If V_(SW) exceeds the nanotube threshold voltageV_(NT-TH), the nanotube structure switches to “OFF” state or logic “0”state, that is, the nanotube NT′ switch and switch-plate of non-volatilestorage element NT′1,0 are electrically connected as illustrated in FIG.53C, and the nanotube NT switch and release-plate dielectric ofnon-volatile storage element NT1,0 are in contact as illustrated in FIG.53C. The near-Ohmic connection between switch-plate 7120′ and NT′ switch7140′ in position 7140′S1 represents the “OFF” state or “0” state. Ifthe power source is removed, cell C1,0 remains in the “ON” state.

An NRAM read operation does not change (destroy) the information in theactivated cells, as it does in a DRAM, for example. Therefore the readoperation in the NRAM is characterized as a non-destructive readout (orNDRO) and does not require a write-back after the read operation hasbeen completed. For a read operation of cell C0,0, BL0 and BL0 b aredriven high to V_(DD) and allowed to float. WL0 is driven high toV_(DD)+V_(FET-TH) and select devices T0,0 and T′0,0 turn on. REF0 is atzero volt. If cell C0,0 stores an “ON” state (“1” state) as illustratedin FIG. 53B, BL0 b remains unchanged, and BL0 discharges to grounded REFline through a conductive path that includes select device T0,0 andnon-volatile storage element NT0,0, the BL0 voltage drops, and the “ON”state or “1” state is detected by a sense amplifier/latch circuit (shownfurther below) that records the voltage drop of BL0 relative to BL0 b byswitching the latch to a logic “1” state. BL0 is connected by the selectdevice T0,0 conductive channel of resistance R_(FET) to the switch-plateof NT0,0. The switch-plate of NT0,0 is in contact with the NT switchwith a contact resistance R_(SW) and the NT switch contacts referenceline REF0 with contact resistance R_(C). The total resistance in thedischarge path is R_(FET)+R_(SW)+R_(C). Other resistance values in thedischarge path, including the resistance of the NT switch, are muchsmall and may be neglected.

For a read operation of cell C1,0, BL1 and BL1 b are driven high toV_(DD) and allowed to float. WL0 is driven high to V_(DD)+V_(TH) andselect devices T1,0 and T′1,0 turn on. REF1 is at zero volts. If cellC1,0 stores an OFF state (“0” state) as illustrated in FIG. 53C, BL1remains unchanged, and BL1 b discharges to grounded REF line through aconductive path that includes select device T′1,0 and non-volatilestorage element NT′1,0, the BL1 b voltage drops, and the OFF state or“0” state is detected by a sense amplifier/latch circuit (shown furtherbelow) that records the voltage drop of BL1 b relative to BL1 byswitching the latch to a logic “0” state. BL1 b is connected by theselect device T′1,0 conductive channel of resistance R_(FET) to theswitch-plate of NT′1,0. The switch-plate of NT′1,0 is in contact withthe NT′ switch with a contact resistance R_(SW) and the NT′ switchcontacts reference line REF0 with contact resistance R_(C). The totalresistance in the discharge path is R_(FET)+R_(SW)+R_(C). Otherresistance values in the discharge path, including the resistance of theNT switch, are much small and may be neglected.

FIG. 55 illustrates the operational waveforms 7800 of memory array 7700shown in FIG. 54 during read “1”, read “0”, write “1”, and write “0”operations for selected cells, while not disturbing unselected cells (nochange to unselected cell stored logic states). Waveforms 7800illustrate voltages and timings to write logic state “1” in cell C0,0,write a logic state “0” in cell C1,0, read cell C0,0 which is in the “1”state, and read cell C1,0 which is in the “0” state. Waveforms 7800 alsoillustrate voltages and timings to prevent disturbing the stored logicstates (logic “1” state and logic “0” state) along selected word lineWL0 in this example. Word line WL0 turns on transistors T2,0 and T′2,0of cell C2,0 after bit lines BL2 and BL2 b have been set to zero volts.No voltage difference exists between NT and NT′ switches andcorresponding switch-plates and release-plates because REF is also atzero volts, and the stored state of cell C2,0 is not disturbed. Allother unselected cells along active word line WL0 are also notdisturbed. Word line WL1 is not selected and is held at zero volts,therefore all select transistors along word line WL1 are in the OFFstate and do not connect bit lines BL and BL′ to corresponding sourceterminals. Therefore, cells C0,1, C1,1 C2,1, and any other cells alongword line WL1 are not disturbed. Cells in memory array 7700 tolerateunlimited read and write operations at each memory cell location with nostored state disturbs, and hold information in a non-volatile mode(without applied power).

Non-volatile NT-on-source NRAM memory array 7700 with bit lines parallelto reference lines is shown in FIG. 54 contains 6 bits, a subset of a2^(N)×2^(M) array 7700, and is a subset of non-volatile NRAM memorysystem 7810 illustrated as memory array 7815 in FIG. 56A. NRAM memorysystem 7810 may be configured to operate like an industry standardasynchronous SRAM or synchronous SRAM because nanotube non-volatilestorage cells 7000 shown in FIG. 53A, in memory array 7700, may be readin a non-destructive readout (NDRO) mode and therefore do not require awrite-back operation after reading, and also may be written (programmed)at CMOS voltage levels (5, 3.3, and 2.5 volts, for example) and atnanosecond and sub-nanosecond switching speeds. NRAM read and writetimes, and cycle times, are determined by array line capacitance, andare not limited by nanotube switching speed. Accordingly, NRAM memorysystem 7810 may be designed with industry standard SRAM timings such aschip-enable, write-enable, output-enable, etc., or may introduce newtimings, for example. Non-volatile NRAM memory system 7810 may bedesigned to introduce advantageous enhanced modes such as a sleep modewith zero current (zero power-power supply set to zero volts),information preservation when power is shut off or lost, enabling rapidsystem recovery and system startup, for example. NRAM memory system 7810circuits are designed to provide the memory array 7700 waveforms 7800shown in FIG. 55.

NRAM memory system 7810 accepts timing inputs 7812, accepts addressinputs 7825, and accepts data 7867 from a computer, or provides data7867 to a computer using a bidirectional bus sharing input/output (I/O)terminals. Alternatively, inputs and outputs may use separate (unshared)terminals (not shown). Address input (I/P) buffer 7830 receives addresslocations (bits) from a computer system, for example, and latches theaddresses. Address I/P buffer 7830 provides word address bits to worddecoder 7840 via address bus 7837; address I/P buffer 7830 provides bitaddresses to bit decoder 7850 via address bus 7852; and address bustransitions provided by bus 7835 are detected by function generating,address transition detecting (ATD), timing waveform generator,controller (controller) 7820. Controller 7820 provides timing waveformson bus 7839 to word decoder 7840. Word decoder 7840 selects the wordaddress location within array 7815. Word address decoder 7840 is used todecode word lines WL and drives word line (WL) using industry standardcircuit configurations resulting in NRAM memory system 7810 on-chip WLwaveforms for both write-one, write-zero, read-one, and read-zerooperations as illustrated by waveforms 7800′ shown in FIG. 57. FIG. 57NRAM memory system 7810 waveforms 7800′ correspond to memory array 7700waveforms 7800 shown in FIG. 55.

Bit address decoder 7850 is used to decode bit lines BL. Controller 7820provides timing waveforms on bus 7854 to bit decoder 7850. BL decoder7850 uses inputs from bus 7854 and bus 7857 to generate data multiplexerselect bits on bus 7859. The output of BL decoder 7850 on bus 7859 isused to select control data multiplexers using combined datamultiplexers & sense amplifiers/latches (MUXs & SAs) 7860. Controller7820 provides function and timing inputs on bus 7857 to MUXs & SAs 7860,resulting in NRAM memory system 7810 on-chip BL waveforms for bothwrite-one, write-zero, read-one, and read-zero operations as illustratedby waveforms 7800′ shown in FIG. 57 corresponding to memory array 7700waveforms 7800 shown in FIG. 55. MUXs & SAs 7860 are used to write dataprovided by read/write buffer 7865 via bus 7864 in array 7815, and toread data from array 7815 and provide the data to read/write buffer 7865via bus 7864 as illustrated in waveforms 7800′.

Sense amplifier/latch 7900 is illustrated in FIG. 56B. Flip flop 7910,comprising two back-to-back inverters is used to amplify and latch datainputs from array 7815 or from read/write buffer 7865. Transistor 7920connects flip flop 7910 to ground when activated by a positive voltagesupplied by control voltage V_(TIMING) 7980, which is provided bycontroller 7820. Gating transistor 7930 connects a bit line BL to node7965 of flip flop 7910 when activated by a positive voltage. Gatingtransistor 7940 connects a bit line BLb to flip flop node 7975 whenactivated by a positive voltage. Transistor 7960 connects voltage V_(DD)to flip flop 7910 node 7965, transistor 7970 connects voltage V_(DD) toflip flop 7910 node 7975, and transistor 7950 ensures that small voltagedifferences are eliminated when transistors 7960 and 7970 are activated.Transistors 7950, 7960, and 7970 are activated (turned on) when gatevoltage is low (zero, for example).

In operation, V_(TIMING) voltage is at zero volts when sense amplifier7900 is not selected. NFET transistors 7920, 7930, and 7940 are in the“OFF” (non-conducting) state, because gate voltages are at zero volts.PFET transistors 7950, 7960, and 7970 are in the “ON” (conducting) statebecause gate voltages are at zero volts. V_(DD) may be 5, 3.3, or 2.5volts, for example, relative to ground. Flip flop 7910 nodes 7965 and7975 are at V_(DD). If sense amplifier/latch 7900 is selected,V_(TIMING) transitions to V_(DD), NFET transistors 7920, 7930, and 7940turn “ON”, PFET transistors 7950, 7960, and 7970 are turned “OFF”, andflip flop 7910 is connected to bit line BL and to bit line BLb. Asillustrated by waveforms BL0, BL0 b, BL1, and BL1 b of waveforms 7800′,bit line BL and BLb are pre-charged prior to activating a correspondingword line (WL0 in this example). If cell 7000 of memory array 7700(memory system array 7815) stores a “1”, then bit line BL and BLb inFIG. 56B correspond to BL0 and BLb, respectively, in FIG. 54. BL isdischarged by cell 7000, voltage droops below V_(DD), BLb is notdischarged, and sense amplifier/latch 7900 detects a “1” state. If cell7000 of memory array 7700 (memory system array 7815) stores a “0”, thenbit line BL and BLb in FIG. 20B corresponds to BL1 and BL1 b,respectively, in FIG. 54. BLb is discharged by cell 7000, voltage droopsbelow V_(DD), BL is not discharged, and sense amplifier/latch 7900detect a “0” state. The time from sense amplifier select to signaldetection by sense amplifier/latch 7900 is referred to as signaldevelopment time. Sense amplifier/latch 7900 typically requires 75 to100 mV difference voltage in order to switch. It should be noted thatcell 7000 requires a nanotube “OFF” resistance to “ON” resistance ratioof greater than 10 to 1 for successful operation. A typical bit line BLhas a capacitance value of 250 fF, for example. A typical nanotubestorage device (switch) or dimensions 0.2 by 0.2 um typically has 8nanotube filaments across the suspended region, for example, asillustrated further below. For a combined contact and switch resistanceof 50,000 ohms per filament, as illustrated further below, the nanotube“ON” resistance of cell 7000 is 6,250 ohms. For a bit line of 250 fF,the time constant RC=1.6 ns. The sense amplifier signal development timeis less than RC, and for this example, is between 1 and 1.5 nanoseconds.

Non-volatile NRAM memory system 7810 operation may be designed for highspeed cache operation at 5 ns or less access and cycle time, forexample. Non-volatile NRAM memory system 7810 may be designed for lowpower operation at 60 or 70 ns access and cycle time operation, forexample. For low power operation, address I/P buffer 7830 operationrequires 8 ns; controller 7820 operation requires 16 ns; bit decoder7850 plus MUXs & SA 7860 operation requires 12 ns (word decoder 7840operation requires less than 12 ns); array 7815 delay is 8 ns; sensing7900 operation requires 8 ns; and read/write buffer 7865 requires 12 ns,for example. The access time and cycle time of non-volatile NRAM memorysystem 7810 is 64 ns. The access time and cycle time may be equalbecause the NDRO mode of operation of nanotube storage devices(switches) does not require a write-back operation after access (read).

Method of Making Two FED Device NT-On-Source Memory System and Circuits

Two FED4 80 (FIG. 2D) controllable source devices are interconnected toform a non-volatile two transistor, two nanotube (2T/2NT) NRAM memorycell that is also referred to as a two device NT-on-source memory cell.The 2T/2NT NT-on-source NRAM memory array is fabricated using the samemethod steps used to fabricate 1T/1NT NT-on-source memory structure 3225shown in FIG. 30M′.

FIG. 22 describes the basic method 3000 of manufacturing preferredembodiments of the invention. In general, preferred methods first form3002, a base structure including field effect devices similar to aMOSFET, having drain, source, gate nodes, and conductive studs on sourceand drain diffusions for connecting to additional layers above theMOSFET device that are used to connect to the nanotube switch fabricatedabove the MOSFET device layer, bit lines, and other structures. Basestructure 8102 with surface 8104 illustrated in FIG. 58A is similar tobase structure 3102′ with surface 3104′ shown in FIG. 30M′ withtransistors, except source diffusions have been elongated to accommodateconnection to a NT-on-source nanotube switch structure 8233 and a cellinterconnect structure 8235. The cell interconnect structure 8235contacts source diffusion region 8124 and is formed in the same way asdrain contact structure 8118 and 8118A, and is used for internal (local)cell wiring as is explained further below.

Once base structure 8102 is defined, then methods of fabricating 2T/2NTNT-on-source memory arrays is the same as methods of fabricating 1T/1NTNT-on-source memory arrays already described. Preferred methods 3004shown in FIGS. 23, 23′, and 23″ and associated figures; methods 3036shown in FIG. 26 and associated figures; methods 3006 shown in FIGS. 27and 27′ and associated figures; and methods 3008 shown in FIGS. 28 and28′ and associated figures. Conductors, semiconductors, insulators, andnanotubes are formed in the same sequence and are in the same relativeposition in the structure. Length, width, thickness dimensions may bedifferent and the choice of conductor material may be differentreflecting differences in design choices. Also, interconnections may bedifferent because of cell differences. The function of electrodes arethe same, however, interconnections may be different. FIGS. 58A and 58Bcross sections illustrated further below correspond to FIG. 30M′ of1T/1NT NT-on-source cross section.

FIG. 58A illustrates cross section A-A′ of array 8000 taken at A-A′ ofthe plan view of array 8000 illustrated in FIG. 58D, and shows FETdevice region 8237 in the FET length direction, elongated source 8124 toaccommodate nanotube switch structure 8233 and cell interconnect region8235. Bit line 8138 contacts drain 8126 through contact 8140, conductingstuds 8118A and 8118, and contact 8123. When FET device region 8237 FETchannel is formed in substrate 8128 below FET gate 8120, bit line 8138is electrically connected to elongated source diffusion 8124, whichconnects to switch-plate 8106 through contact 8121, conducting stud8222, and contact 8101, and to release-plate extension 8205R throughcontact 8340, conducting studs 8300 and 8300A, and contact 8320, asillustrated in 54A. Nanotube switch structure 8233 corresponds tonanotube switch structure 3133 in FIG. 30M′ with switch-plate 8106,dielectric layer 8108 between nanotube 8114 layer and switch plate 8106,combined conductors 8119 and 8117 forming a picture frame regioncontacting nanotube 8114 layer, insulator 8203 insulates the undersideof release-plate 8205. Nanotube reference (picture-frame) regionextension 8119R contacts and is a part of reference array line 8400shown in FIG. 58D. Structures are embedded in dielectric layer 8116,SiO₂ for example, except for gap regions above and below nanotube layersin the nanotube switching region. FIG. 58B illustrates cross sectionB-B′ of array 8000 taken at B-B′ of the plan view of array 8000illustrated in FIG. 58D, and shows FET device region 8237′ in the FETlength direction, elongated source 8124′ to accommodate nanotube switchstructure 8233′ and cell interconnect region 8235′. Bit line 8138′contacts drain 8126′ through contact 8140′, conductive studs 8118A′ and8118′, and contact 8123′. When FET device region 8237′ FET channel isformed in substrate 8128 below FET gate 8120, bit line 8138′ iselectrically connected to elongated source diffusion 8124′, whichconnect to switch-plate 8106′ through contact 8121′, conducting stud8222′, and contact 8101′, and to release-plate extension 8205R′ throughcontact 8340′, conductive studs 8300′ and 8300A′, and contact 8320′, asillustrated in FIG. 58B. Nanotube switch structure 8233′ corresponds tonanotube switch structure 8233 and structure 3133 in FIG. 30M′. Nanotubereference (picture-frame) region extension 8119R′ contacts and is a partof reference array line 8400 shown in FIG. 58D. FIG. 58C illustratescross section C-C′ of array 8000 taken at C-C′ of plan view of array8000 illustrated in FIG. 58D, and shows nanotube switch structure 8233with switch-plate 8106 connected to source diffusion 8124 as furtherdescribed with respect to FIG. 58A. Release-plate 8205 extension 8205Rconnects release-plate 8205 to source diffusion 8124′ through contact8320′, conducting studs 8300A′ and 8300′, and contact 8340′, all withincell 8500 boundaries. Thus, source 8124 diffusion is electricallyconnected to switch-plate 8106 of nanotube switch structure 8233, andsource 8124′ diffusion is electrically connected to release-plate 8205of nanotube switch structure 8233 as illustrated in FIG. 58C, and FIG.58D. A corresponding interconnection means is used to electricallyconnect source 8124′ to switch-plate 8106′ of nanotube switch structure8233′, and also to electrically connect source 8124 to release plate8205′ of nanotube switch structure 8233′ as illustrated in FIG. 58D.FIG. 58D illustrates a plan view of non-volatile 2T/2NT NT-on-sourcearray 8000 including two interconnected NT-on-source FED4 80 structureshaving two transistor regions 8237 and 8237′ and two nanotube switchstructures 8233 and 8233′; two cell interconnect regions 8235 and 8235′including release-plate interconnect extensions 8205R and 8205R′, andnanotube reference (picture-frame) region extensions 8119R and 8119R′contacting array reference line REF 8400; array word line 8120A formsgates 8120 and 8120′ of the FET select devices; bit line BL 8138contacting drain 8126 through contact 8140 and underlying stud andcontact shown in FIG. 58A; bit line BLb 8138′ contacting drain 8126′through contact 8140′ and underlying stud and contact shown in FIG. 58B;in terms of minimum technology feature size, 2T/2NT NT-on-source cell8500 area is approximately 45 F². If sub-minimum technology features areused in the NT switch structure (not shown), the minimum cell 8500 areain terms of minimum technology feature size is 30 F². Nanotube-on-sourcearray 8000 structures illustrated in FIGS. 58A, 58B, 58C, and 58Dcorrespond to 2T/2NT nanotube-on-source array 7700 schematicrepresentations illustrated in FIG. 54. Bit line 3138 structurescorrespond to any of bit lines BL0 to BL2 schematic representations; bitline 8138′ structures correspond to any of bit lines BL0 b to BLb2schematic representations; common reference line 8400 structurescorrespond to common reference lines REF schematic representations; wordline 3120A structures correspond to any of word lines WL0 and WL1schematic representations; nanotube switch structures 3233 and 3233′correspond to any of NT0,0 to NT2,1 and NT′0,0 to NT′2,1 schematicrepresentations, respectively; FET 3237 and 3237′ structures correspondto any of FETs T0,0 to T2,1 and T′0,0 to T′2,1 schematicrepresentations, respectively; and exemplary cell 8500 corresponds toany of cells C0,0 to cell C2,1 schematic representations.

Methods to increase the adhesion energies through the use of ionic,covalent or other forces may be used to alter the interactions with theelectrode surfaces. These methods can be used to extend the range ofstability within these junctions.

Nanotubes can be functionalized with planar conjugated hydrocarbons suchas pyrenes which may then aid in enhancing the internal adhesion betweennanotubes within the ribbons. The surface of the substrate used can bederivatized/functionalized to create a more hydrophobic or hydrophilicenvironment to promote better adhesion of nanotubes. The nature of thesubstrate allows control over the level of dispersion of the nanotubesto generate monolayer nanotube fabric.

Preferred nanofabrics have a plurality of nanotubes in contact so as toform a non-woven fabric. Gaps in the fabric, i.e., between nanotubeseither laterally or vertically, may exist. The fabric preferably has asufficient amount of nanotubes in contact so that at least oneelectrically conductive, semi-conductive or mixed conductive andsemi-conductive pathway exists from a given point within a ribbon orarticle to another point within the ribbon or article (even afterpatterning of the nanofabric).

Though certain embodiments prefer single-walled nanotubes in thenanofabrics, multi-walled nanotubes may also be used. In addition,certain embodiments prefer nanofabrics that are primarily a monolayerwith sporadic bilayers and trilayers, but other embodiments benefit fromthicker fabrics with multiple layers.

It will be further appreciated that the scope of the present inventionis not limited to the above-described embodiments but rather is definedby the appended claims, and that these claims will encompassmodifications and improvements to what has been described.

1. A field effect device, comprising: a gate, a source, and a drain,with a conductive channel between the source and the drain; and ananotube switch having a corresponding control terminal, said nanotubeswitch being positioned to control electrical conduction through saidconductive channel.
 2. The field effect device of claim 1, wherein thenanotube switch is switchable between a first nonvolatile logical statein which electrical conduction through said conductive channel isenabled, and a second nonvolatile logical state in which electricalconduction through said conductive channel is disabled.
 3. The fieldeffect device of claim 2, wherein the first nonvolatile logical statecomprises the nanotube switch contacting one of the gate, the source,and the drain, and wherein the second nonvolatile logical statecomprises the nanotube switch contacting the control terminal.
 4. Thefield effect device of claim 2, wherein the first nonvolatile statecomprises the nanotube switch contacting a terminal corresponding to oneof the gate, the source, and the drain, and wherein the secondnonvolatile logical state comprises the nanotube switch contacting thecontrol terminal.
 5. The field effect device of claim 1, wherein thenanotube switch comprises a non-woven nanotube fabric.
 6. The fieldeffect device of claim 1, wherein the gate, source, drain, andconductive channel are parts of a semiconductor transistor.
 7. The fieldeffect device of claim 1, wherein the nanotube switch controlsconduction through said conductive channel by electromechanicaldeflection.
 8. A field effect device, comprising: a gate having acorresponding gate terminal; a source having a corresponding sourceterminal; a drain having a corresponding drain terminal; a controlterminal; a nanotube switching element positioned between one of thegate, source, and drain and its corresponding terminal and switchable,in response to electrical stimuli at the control terminal and at leastone of the gate, source, and drain terminals, between a firstnon-volatile state that enables current flow between the source and thedrain and a second non-volatile state that disables current flow betweenthe source and the drain.
 9. The device of claim 8 wherein the others ofthe gate, source, and drain are in direct electrical communication withtheir corresponding terminal.
 10. The device of claim 8, wherein, whenthe nanotube switching element is in the first state, current flows fromthe source to the drain in response to electrical stimulus at the gateterminal.
 11. The device of claim 8, wherein, when the nanotubeswitching element is in the second state, current does not flow from thesource to the drain in response to electrical stimulus at the gateterminal.
 12. The device of claim 8, wherein, when the nanotubeswitching element is in the first state, the nanotube switching elementprovides a conductive pathway between the one of the gate, source, anddrain and its corresponding terminal.
 13. The device of claim 8,wherein, when the nanotube switching element is in the second state,there is no conductive pathway between the one of the gate, source, anddrain and its corresponding terminal.
 14. The device of claim 8, furthercomprising a channel region between the source and the drain throughwhich, when the nanotube switching element is in the first state,current flow is enabled.
 15. The device of claim 8, wherein the gate,source, and drain are parts of a semiconductor transistor.
 16. Thedevice of claim 8, further comprising control logic to switch thenanotube switching element from the first state to the second state bycreating a voltage difference between the nanotube switching element andthe control terminal and thus causing the nanotube switching element toelectrically contact the control terminal.
 17. The device of claim 16,wherein the voltage difference exceeds a threshold voltage below whichthe nanotube element would remain in the first state.
 18. The device ofclaim 8, further comprising control logic to switch the nanotubeswitching element from the first state to the second state by creating avoltage difference between the nanotube switching element and thecontrol terminal and thus causing the nanotube switching element toelectrically contact an insulating layer on the control terminal. 19.The device of claim 18, wherein the voltage difference exceeds athreshold voltage below which the nanotube element would remain in thefirst state.
 20. The device of claim 8, further comprising control logicto switch the nanotube switching element from the second state to thefirst state by creating a voltage difference between the nanotubeswitching element and the control terminal and thus cause the nanotubeswitching element to electrically contact the one of the gate, source,and drain.
 21. The device of claim 20, wherein the voltage differenceexceeds a threshold voltage below which the nanotube element wouldremain in the first state.
 22. The device of claim 8, further comprisingcontrol logic to switch the nanotube switching element from the secondstate to the first state by creating a voltage difference between thenanotube switching element and the control terminal and thus cause thenanotube switching element to electrically contact the one of the gate,source, and drain terminals.
 23. The device of claim 22, wherein thevoltage difference exceeds a threshold voltage below which the nanotubeelement would remain in the first state.
 24. The device of claim 8,wherein switching the nanotube switching element between the first andsecond states electromechanically deflects the nanotube switchingelement.
 25. The device of claim 8, wherein the nanotube switchingelement comprises a nonwoven nanotube fabric.
 26. The device of claim 8,further comprising readout circuitry capable of determining whether thenanotube switching element is in the first state or the second state.27. The device of claim 26, wherein, when the readout circuitrydetermines whether the nanotube switching element is in the first stateor the second state, the readout circuitry does not change the state ofthe nanotube switching element.
 28. The device of claim 8, wherein thegate terminal is connected to a word line, the source terminal isconnected to a bit line, the drain terminal is connected to a releaseline, and the control terminal is connected to a reference line.
 29. Amethod of fabricating a nanotube switching element, the methodcomprising: forming first and second sacrificial layers; forming ananotube fabric, a defined region of the fabric being positioned betweenthe first and second sacrificial layers; forming a third sacrificiallayer, at least a portion of the third sacrificial layer being adjacentone of the first and second sacrificial layers; forming a materiallayer, at least a portion of the material layer being adjacent the thirdsacrificial layer; substantially removing the third sacrificial layer tocreate a gap adjacent the at least a portion of the material layer; andsubstantially removing the first and second sacrificial layers byflowing an etchant through the gap to suspend the defined region of thefabric.
 30. The method of claim 29, wherein the third sacrificial layerhas a sublithographic thickness in at least one dimension, and whereinthe gap has the sublithographic thickness in at least one dimension. 31.The method of claim 29, wherein the third sacrificial layer has athickness of between about 50 and 100 nm.
 32. The method of claim 29,comprising positioning the third sacrificial layer so it is laterallydisplaced from the defined region of nanotube fabric.
 33. The method ofclaim 32, wherein the third sacrificial layer contacts the firstsacrificial layer at a location that is laterally displaced from thedefined region of nanotube fabric.
 34. The method of claim 29, whereinsubstantially removing the third sacrificial layer comprises etching thethird sacrificial layer.
 35. The method of claim 29, further comprisingsubstantially sealing the gap.
 36. The method of claim 35, whereinsubstantially sealing the gap comprises encapsulating the switchingelement.
 37. The method of claim 35, wherein substantially sealing thegap comprises depositing insulator material.
 38. The method of claim 29,further comprising providing a field effect device comprising a gate, asource, and a drain, wherein at least one of the gate, the source, andthe drain is in spaced relation to the nanotube fabric.
 39. The methodof claim 29, wherein the first and second sacrificial layers areetchable selective to the third sacrificial layer.
 40. The method ofclaim 29, wherein the etchant flows through the nanotube fabric duringthe step of substantially removing the first and second sacrificiallayers.
 41. The method of claim 29, wherein the nanotube fabric isporous.
 42. The method of claim 29, wherein the nanotube layer has athickness between about 0.5 and 5 nm.
 43. The method of claim 29,wherein the first and second sacrificial layers each have a thicknessbetween about 5 nm and about 40 nm.
 44. The method of claim 29, whereinat least one of the first and second sacrificial layers comprisessilicon, Si₃N₄, or TiW.
 45. The method of claim 29, wherein the materiallayer comprises an insulator or a photoresist.
 46. The method of claim29, further comprising providing an electrode in spaced relation to thedefined region of the fabric.
 47. The method of claim 46, wherein theelectrode comprises tungsten, aluminum, copper, gold, nickel, chrome,platinum, palladium, or mixtures thereof.
 48. The method of claim 47,wherein the electrode also comprises an insulator layer disposed on asurface facing the nanotube fabric.
 49. The method of claim 48, whereinthe insulator layer comprises SiO₂, Al₂O₃, SiN, or mixtures thereof. 50.The method of claim 48, wherein the insulator layer has a thicknessbetween about 5 nm and about 50 nm.
 51. The method of claim 48, whereinthe insulator layer is etchable selective to the first sacrificiallayer.